相关论文: Basic obstacle for electrical spin-injection from …

Slow magnetic relaxation and two level fluctuations measurements under high current injection is performed in single-contacted ferromagnetic nanostructures. The magnetic configurations of the samples are described by two metastable states…

We study the effect of the electron-electron interaction on the transport of spin polarized currents in metals and doped semiconductors in the diffusive regime. In addition to well-known screening effects, we identify two additional…

We study spin polarization in a split-gate quantum wire focussing on the effect of a realistic smooth potential due to remote donors. Electron interaction and spin effects are included within the density functional theory in the local spin…

At each of the boundaries of the two-dimensional (2D) rectangular conductor parallel to the electric current there arises a stripe with an electric field transverse to the current and a 100% electron spin polarization. The two stripes have…

We study ballistic transport through semiconductor quantum point contact systems under different confinement geometries and applied fields. In particular, we investigate how the {\em lateral} spin-orbit coupling, introduced by asymmetric…

Ultrashort spin current pulses have a great potential of becoming the carriers of information in future ultrafast spintronics. They present the outstanding property of an extremely compressed time profile, which can allow for the building…

We explore electrically injected, spin polarized transport in a ballistic two-dimensional electron gas. We augment the Buettiker-Landauer picture with a simple, but realistic model for spin-selective contacts to describe multimode…

Injecting spins into a semiconductor channel and transforming the spin information into a significant electrical output signal is a long standing problem in spintronics. Actually, this is the prerequisite of several concepts of spin…

When a spin-polarized current flows through a ferromagnet, the local magnetization receives a spin torque. Two consequences of this spin torque are studied. First, the uniformly magnetized ferromagnet becomes unstable if a sufficiently…

High degree of electron spin polarization is of crucial importance in operation of spintronic devices. We study the propagation of spin-polarized electrons through a boundary between two n-type semiconductor regions with different doping…

Spin-orbit coupling in semiconductors relates the spin of an electron to its momentum and provides a pathway for electrically initializing and manipulating electron spins for applications in spintronics and spin-based quantum information…

Boundary conditions are derived that determine the penetration of spin current through an interface of two non-collinear ferromagnets with an arbitrary angle between their magnetization vectors. We start from the well-known transformation…

Because of the peculiar coupling of spatial and spin degrees of freedom effected by the Rashba spin-orbit interaction, lateral confinement of a two dimensional electronic system leads to a finite transverse spin polarization near the…

The spin filtering effect of the electron current in a double-barrier resonant-tunneling diode (RTD) consisting of ZnMnSe semimagnetic layers has been studied theoretically. The influence of the distribution of the magnesium ions on the…

In recent years, electrical spin injection and detection has grown into a lively area of research in the field of spintronics. Spin injection into a paramagnetic material is usually achieved by means of a ferromagnetic source, whereas the…

We evaluate the charge and longitudinal spin response functions of a two-dimensional electron gas with $e^2/r$ interactions in an arbitrary state of spin polarization, using a structurally self-consistent approach to treat exchange and…

Te is a naturally p-doped semiconductor with a chiral structure, where an electrical current causes the conduction electrons to become spin polarized parallel to the transport direction. In this paper, we present a comprehensive theoretical…

The spin flip of the conduction electrons at the interface of a ferromagnetic and a nonmagnetic part of a metallic wire, suspended between two electrodes, is shown to tort the wire when a current is driven through it. In order to enhance…

We formulate a theory of current-induced spin torques in inhomogeneous III-V ferromagnetic semiconductors. The carrier spin-3/2 and large spin-orbit interaction, leading to spin non-conservation, introduce significant conceptual differences…

We propose a spin-dependent resonant tunneling structure to efficiently inject spin-polarized current into silicon (Si). By means of a heavily doped polycrystalline Si (Poly-Si) between the ferromagnetic metal (FM) and Si to reduce the…