相关论文: Bandgap renormalization of modulation doped quantu…
Precise control of doping in single nanowires (NWs) is essential for the development of NW-based devices. Here, we investigate a series of MBE-grown GaAs NWs with Be (p-type) and Si (n-type) doping using high-resolution cathodoluminescence…
Doped semiconductors are a central and crucial component of all integrated circuits. By using a combination of white light and a focused laser beam, and exploiting hBN defect states, heterostructures of hBN/Graphene/hBN are photodoped…
Design, epitaxial growth, and resonant spectroscopy of CdSe Quantum Dots (QDs) embedded in an innovative (Zn,Cd)Se barrier are presented. The (Zn,Cd)Se barrier enables shifting of QDs energy emission down to 1.87 eV, that is below the…
The edge states in the fractional quantum Hall systems at filling factor $\nu=1/3$ are studied by the density matrix renormalization group method. It is shown that the density oscillation induced by the local boundary condition at the edge…
When a resonance associated with electromagnetically induced transparency (EIT) in an atomic ensemble is modulated by an off-resonant standing light wave, a band of frequencies can appear for which light propagation is forbidden. We show…
Most available theories for correlated electron transport are based on the Hubbard Hamiltonian. In this effective theory, renormalized hopping and interaction parameters only implicitly incorporate the coupling of correlated charge carriers…
The stacked two layered materials with a lattice constant mismatch and/or with twist angle relative to each other can create a moir\'e pattern, modulating the electronic properties of the pristine materials. Here, we combine scanning…
The electronic structure of strain-engineered single InGaAs/GaAs quantum dots emitting in the telecommunication O band is probed experimentally by photoluminescence excitation spectroscopy. Observed resonances can be attributed to p-shell…
Unusual quantum phenomena usually emerge upon doping Mott insulators. Using a combinatorial molecular beam epitaxy system integrated with cryogenic scanning tunneling microscopy, we investigate the electronic structure of a modulation-doped…
A generalized antiferromagnetic approach to the Mott transition is analyzed with special emphasis on electron doped cuprates, where evidence for electronic phase separation is weak or absent. Fluctuations are incorporated via a…
We characterize the positively charged exciton (X1+) in single InGaAs quantum dots using resonant laser spectroscopy. Three samples with different dopant species (Be or C as acceptors, Si as a donor) are compared. The p-doped samples…
Though most fermionic Mott insulators order at low temperatures, ordering is ancillary to their insulating behaviour. Our emphasis here is on disentangling ordering from the intrinsic strongly correlated physics of a doped half-filled band.…
The amplitude V_0 of unidirectional periodic potential modulation introduced by a surface grating into a two-dimensional electron gas (2DEG) formed at AlGaAs/GaAs heterointerface is measured as a function of electron density n_e by…
We study the hole and magnon spectral functions as a function of hole doping in the two-dimensional (2D) t-J and t-t'-t"-J models working within the limits of the spin-wave theory, by linearizing the hole-spin-deviation interaction and by…
We investigate the nonequilibrium electronic structure of 1T-TaS2 by time- and angle-resolved photoemission spectroscopy. We observe that strong photoexcitation induces the collapse of the Mott gap, leading to the photo-induced metallic…
We study the electronic and optical properties of laterally coupled InGaAs/GaAs quantum dot molecules under lateral electric field. We find that electrons perceive the double-dot structure as a compound single object, while the holes…
One-dimensional Mott insulators exhibit giant nonlinear optical response. Based on the dynamical density matrix renormalization group method, photoexcited states and optical response in the insulators are studied as functions of the on-site…
${\beta}$-LiGaO$_2$ with an orthorhombic wurtzite-derived structure is a candidate ultrawide direct-bandgap semiconductor. In this work, using the non-adiabatic Allen-Heine-Cardona approach, we investigate the bandgap renormalization…
Atomistic electronic structure calculations are performed to study the coherent inter-dot couplings of the electronic states in a single InGaAs quantum dot molecule. The experimentally observed excitonic spectrum [12] is quantitatively…
We have studied a 50/50\AA superlattice of GaAs/Al$_{0.21}$Ga$_{0.79}$As composition, modulation-doped with Si, to produce $n=1.4\times 10^{12}$ cm$^{-2}$ electrons per superlattice period. The modulation-doping was tailored to avoid the…