相关论文: Low-temperature dephasing in disordered conductors…

Study of the dephasing in electronic systems is not only important for probing the nature of their ground states, but also crucial to harnessing the quantum coherence for information processing. In contrast to well-studied conventional…

The low temperature acoustic properties of bulk metallic glasses measured over a broad range of frequencies rigorously test the predictions of the standard tunneling model. The strength of these experiments and their analyses is mainly…

We study transport properties of a disordered tight-binding model (XX spin chain) in the presence of dephasing. Focusing on diffusive behavior in the thermodynamic limit at high energies, we analytically derive the dependence of…

We report direct experimental evidence that the insulating phase of a disordered, yet strongly interacting two-dimensional electron system (2DES) becomes unstable at low temperatures. As the temperature decreases, a transition from…

Temperature dependent weak localization is measured in metallic nanowires in a previously unexplored size regime down to width $w=5$ nm. The dephasing time, $\tau_{\phi}$, shows a low temperature $T$ dependence close to quasi-1D theoretical…

We investigate low-temperature dephasing in several model systems, where a quantum degree of freedom is coupled to a bath. Dephasing, defined as the decay of the coherence of inital non-equilibrium states, also influences the dynamics of…

Strongly disordered and strongly interacting quantum critical points are difficult to access with conventional field theoretic methods. They are, however, both experimentally important and theoretically interesting. In particular, they are…

We present a nonperturbative approach which allows to evaluate the weak localization correction to the conductivity of disordered conductors in the presence of interactions. The effect of the electron-electron interaction on the…

We study dephasing by electron interactions in a small disordered quasi-one dimensional (1D) ring weakly coupled to leads. We use an influence functional for quantum Nyquist noise to describe the crossover for the dephasing time $\Tph (T)$…

We calculate the dephasing rate of the electrons in the presence of interactions and elastic spin disorder scattering. In the frame of a self-consistent diagrammatic treatment, we obtain saturation of the dephasing rate in the limit of zero…

We report measurements of the electron dephasing time extracted from the weak localization (WL) correction to the average conductance in an open AlGaAs/GaAs quantum dot from 1 K to 13 mK. In agreement with theoretical predictions but in…

The temperature and magnetic-field dependences of the resistance of one-dimensional (1D) conductors have been studied in the vicinity of the Thouless crossover. We find that on the weak localization (WL) side of the crossover, these…

The dephasing time of electrons in open semiconductor quantum dots, measured using ballistic weak localization, is found to saturate below ~ 100 mK, roughly twice the electron base temperature, independent of dot size. Microwave radiation…

We study the electron-phonon relaxation (dephasing) rate in disordered semiconductors and low-dimensional structures. The relaxation is determined by the interference of electron scattering via the deformation potential and elastic electron…

We non-perturbatively analyze the effect of electron-electron interactions on weak localization (WL) in relatively short metallic conductors with a tunnel barrier. We demonstrate that the main effect of interactions is electron dephasing…

The electron dephasing processes in two-dimensional homogeneous and inhomogeneous indium tin oxide thin films have been investigated in a wide temperature range 0.3--90 K. We found that the small-energy-transfer electron-electron ($e$-$e$)…

Localization and dephasing of conduction electrons in a low carrier density ferromagnet due to scattering on magnetic fluctuations is considered. We claim the existence of the "mobility edge", which separates the states with fast diffusion…

We derive a general expression for the conductivity of a disordered conductor with electron-electron interactions (treated within the standard model) and evaluate the weak localization correction delta sigma_{wl} employing no approximations…

In low temperature limit, we study electron counting statistics of a disordered conductor. We derive an expression for the distribution of charge transmitted over a finite time interval by using a result from the random matrix theory of…

We compute the transient dynamics of phonons in contact with high energy "hot" charge carriers in 12 polar and non-polar semiconductors, using a first-principles Boltzmann transport framework. For most materials, we find that the decay in…