相关论文: Quantum dot dephasing by edge states

Nonlinear damping, the change in damping rate with the amplitude of oscillations plays an important role in many electrical, mechanical and even biological oscillators. In novel technologies such as carbon nanotubes, graphene membranes or…

The full time-dependent four-wave mixing polarization in quantum dots is microscopically calculated, taking into account acoustic phonon-assisted transitions between different exciton states of the dot. It is shown that quite different…

An interaction of electromagnetic field with a nanostructure composed of two quantum dots is studied theoretically. An effect of a resonant electron transfer between the localized low-lying states of quantum dots is predicted. A necessary…

Electron states in a quantum dot (QD) located near a 2D system of dipolar excitons are perturbed by fluctuations of the exciton density caused by the electron-exciton interaction. This results in the frequency changes of electron…

The puzzling behavior of the transition phase through a quantum dot can be understood in a natural way via a formation of the electron molecule in the quantum dot. In this case the resonance tunneling takes place through the…

In this paper, we study the quantum decoherence induced by accumulation of electron tunnelings during the quantum measurement of a charge qubit. The charge qubit is a single electron confined in coupled quantum dots. The measurement of the…

We study dephasing in electron transport through a large quantum dot (a Fabry-Perot interferometer) in the fractional quantum Hall regime with filling factor $2/3$. In the regime of sequential tunneling, dephasing occurs due to electron…

In this paper we study the low temperature kinetics of the electrons in the system composed of a quantum dot connected to two leads by solving the equation of motion. The decoherence and the relaxation of the system caused by the gate…

Spin qubits in Silicon quantum dots can have long coherence times, yet their manipulation relies on the exchange interaction, through which charge noise can induce decoherence. Charge traps near the interface of a Si heterostructure lead to…

Electron spin dephasing in a singly charged semiconductor quantum dot can partially be suppressed by periodic laser pulsing. We propose a semi-classical approach describing the decoherence of the electron spin polarization governed by the…

Matter-wave interferometers with micro-particles will enable the next generation of quantum sensors to probe minute quantum phase information. Therefore, estimating the loss of coherence and the degree of entanglement degradation for such…

Unexpected fluctuating charge field near a semiconductor quantum dot has severely limited the coherence time of the localized spin qubit. It is the interplay between the spin-orbit coupling and the asymmetrical confining potential in a…

We consider the distribution of conductance fluctuations in disordered quantum dots with single channel leads. Using a perturbative diagrammatic approach, valid for continuous level spectra, we describe dephasing due to processes within the…

In the presence of direct trajectories connecting source and drain contacts, the conductance of a quantum dot may exhibit resonances of the Fano type. Since Fano resonances result from the interference of two transmission pathways, their…

Exchange coupled {\it spin} qubits in semiconductor nanostructures are shown to be vulnerable to dephasing caused by {\it charge noise} invariably present in the semiconductor environment. This decoherence of exchange gate by environmental…

We analyze theoretically the decoherence of two interacting electrons in a double self-assembled quantum dot due to a random telegraph noise. For this purpose we have examined the pure dephasing rate by evaluating the decoherence factor.…

A quantum dot is a sub-micron-scale conducting device containing up to several thousand electrons. Transport through a quantum dot at low temperatures is a quantum-coherent process. This review focuses on dots in which the electron's…

Fluctuations of electric fields can change the position of a gate-defined quantum dot in a semiconductor heterostructure. In the presence of magnetic field gradient, these stochastic shifts of electron's wavefunction lead to fluctuations of…

We study the conductance statistical features of ballistic electrons flowing through a chaotic quantum dot. We show how the temperature affects the universal conductance fluctuations by analyzing the influence of dephasing and thermal…

An external magnetic field has been applied in laterally coupled dots (QDs) and we have studied the QD properties related to charge decoherence. The significance of the applied magnetic field to the suppression of electron-phonon relaxation…