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相关论文: Conductance distribution between Hall plateaus

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We have investigated the transport properties of one-dimensional (1D) constrictions defined by split-gates in high quality GaAs/AlGaAs heterostructures. In addition to the usual quantized conductance plateaus, the equilibrium conductance…

介观与纳米尺度物理 · 物理学 2009-10-31 K. J. Thomas , J. T. Nicholls , N. J. Appleyard , M. Pepper , M. Y. Simmons , D. R. Mace , W. R. Tribe , D. A. Ritchie

We find the current voltage characteristics of a 2DEG-S interface in magnetic field taking into account the surface roughness. Typically in experiments $L/2R_c\gtrsim 3$, where $L$ is the surface length and $R_c$ is the cyclotron radius.…

介观与纳米尺度物理 · 物理学 2007-06-22 Nikolai M. Chtchelkatchev , Igor S. Burmistrov

We characterize the carrier density profile of the ground state of graphene in the presence of particle-particle interaction and random charged impurity for zero gate voltage. We provide detailed analysis on the resulting spatially…

介观与纳米尺度物理 · 物理学 2017-03-15 M. N. Najafi , M. Ghasemi Nezhadhaghighi

We study two dimensional electron systems confined in wide quantum wells whose subband separation is comparable with the Zeeman energy. Two N = 0 Landau levels from different subbands and with opposite spins are pinned in energy when they…

介观与纳米尺度物理 · 物理学 2024-02-27 Wenlu Lin , Xing Fan , Lili Zhao , Yoon Jang Chung , Adbhut Gupta , Kirk W. Baldwin , Loren Pfeiffer , Hong Lu , Yang Liu

Measurements of conductance $G$ on short, wide, high-mobility Si-MOSFETs reveal both a two-dimensional metal-insulator transition (MIT) at moderate temperatures (1 $<~ T <$ 4~K) and mesoscopic fluctuations of the conductance at low…

强关联电子 · 物理学 2009-10-30 K. P. Li , Dragana Popovic , S. Washburn

The transresistance (i.e. the voltage induced in one layer by a current in another) between composite fermions in double-layers of half-filled Landau levels is shown to be dominated by scattering due to singular gauge field fluctuations…

强关联电子 · 物理学 2016-08-31 Yong Baek Kim , A. J. Millis

Ground-state properties of a double-large-dot sample connected to a reservoir via a single-mode point contact are investigated. When the interdot transmission is perfect and the dots controlled by the same dimensionless gate voltage, we…

介观与纳米尺度物理 · 物理学 2009-11-07 Karyn Le Hur

The effects of strain, induced by a Gaussian bump, on the magnetic field dependent transport properties of a graphene Hall bar are investigated. The numerical simulations are performed using both classical and quantum mechanical transport…

介观与纳米尺度物理 · 物理学 2017-01-04 S. P. Milovanovic , F. M. Peeters

We have realized encapsulated trilayer MoS$_2$ devices with gated graphene contacts. In the bulk, we observe an electron mobility as high as 7000~cm$^{2}$/(V s) at a density of 3 $\times$ 10$^{12}$~cm$^{-2}$ at a temperature of 1.9~K.…

We report on a comparison of four GaAs/AlGaAs-based quantum resistance standards using an original technique adapted from the well-known Wheatstone bridge. This work shows that the quantized Hall resistance at Landau level filling factor…

介观与纳米尺度物理 · 物理学 2013-08-26 Félicien Schopfer , Wilfrid Poirier

A two-dimensional quantum Hall system is studied for a wide class of potentials including single-body random potentials and repulsive electron-electron interactions. We assume that there exists a non-zero excitation gap above the ground…

介观与纳米尺度物理 · 物理学 2007-05-23 Tohru Koma

We report measurements of spin susceptibility of a two-dimensional hole gas confined at an GaAs/AlGaAs interface in density range from 2.8 x 10^10 to 6.5 x 10^10 cm-2. We used the method of spin polarization of carriers in parallel magnetic…

介观与纳米尺度物理 · 物理学 2009-11-10 Mukesh Kumar , Giorgio Mori , Flavio Capotondi , Giorgio Biasiol , Lucia Sorba

We have measured magnetotransport of the two-dimensional electron gas in a Hall bar geometry in the presence of small carrier density gradients. We find that the longitudinal resistances measured at both sides of the Hall bar interchange by…

介观与纳米尺度物理 · 物理学 2016-08-16 L. A. Ponomarenko , D. T. N. de Lang , A. de Visser , V. A. Kulbachinskii , G. B. Galiev , H. Künzel , A. M. M. Pruisken

We investigate the probability distribution $p(g)$ of the conductance $g$ in anisotropic two-dimensional systems. The scaling procedure applicable to mapping the conductance distributions of localized anisotropic systems to the…

无序系统与神经网络 · 物理学 2009-11-07 Marc Ruehlaender , Peter Markos , C. M. Soukoulis

We consider mesoscopic fluctuations of Coulomb drag transresistivity between two layers at a Landau level filling factor $\nu=1/2$ each. We find that at low temperature sample to sample fluctuations exceed both the ensemble average and the…

介观与纳米尺度物理 · 物理学 2009-10-31 B. N. Narozhny , I. L. Aleiner , Ady Stern

We examined the magneto-transport behavior of electrons confined at the conducting LaAlO3/SrTiO3 interface in the low sheet carrier density regime. We observed well resolved Shubnikov-de Haas quantum oscillations in the longitudinal…

材料科学 · 物理学 2015-06-19 Yanwu Xie , Christopher Bell , Minu Kim , Hisashi Inoue , Yasuyuki Hikita , Harold Y. Hwang

Quasi-two-dimensional transport is investigated in a system consisting of one ferromagnetic layer placed between two insulating layers. Using the mechanism of skew-scattering to describe the Extraordinary Hall Effect (EHE) and calculating…

材料科学 · 物理学 2013-05-29 N. Ryzhanova , A. Vedyayev , A. Pertsova , B. Dieny

We study the anomalous Hall conductivity in spin-polarized, asymmetrically confined two-dimensional electron and hole systems, focusing on skew-scattering contributions to the transport. We find that the skew scattering, principally…

Fluctuation of Coulomb blockade peak spacings in large two-dimensional semiconductor quantum dots are studied within a model based on the electrostatics of several electron islands among which there are random inductive and capacitive…

介观与纳米尺度物理 · 物理学 2009-10-31 Yshai Avishai , Daniel Berend , Richard Berkovits

In the transport studies of topological insulators, microflakes exfoliated from bulk single crystals are often used because of the convenience in sample preparation and the accessibility to high carrier mobilities. Here, based on finite…

介观与纳米尺度物理 · 物理学 2021-11-01 Fan Gao , Yongqing Li