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相关论文: Field-asymmetric transverse magnetoresistance in a…

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The giant transverse magnetoresistance is observed in the case of photoinduced nonequilibrium carriers in an asymmetric undoped system of three GaAs/AlGaAs quantum wells at room temperature. In a magnetic field of 75 kOe, the resistance of…

材料科学 · 物理学 2007-05-23 V. I. Tsebro , O. E. Omel'yanovskii , V. V. Kapaev , Yu. V. Kopaev , V. I. Kadushkin

Asymmetric magnetization reversal is an unusual phenomenon in antiferromagnet / ferromagnet (AF/FM) exchange biased bilayers. We investigated this phenomenon in a simple model system experimentally and by simulation assuming inhomogeneously…

In this study we have measured the magnetoresistance response of inverted HgTe quantum wells in the presence of a large parallel magnetic field up to 33 T is applied. We show that in quantum wells with inverted band structure a…

介观与纳米尺度物理 · 物理学 2019-02-20 T. Khouri , S. Pezzini , M. Bendias , P. Leubner , U. Zeitler , N. E. Hussey , H. Buhmann , L. W. Molenkamp , M. Titov , S. Wiedmann

While magnetoresistance (MR) has generally been found to be symmetric in applied field in non-magnetic or magnetic metals, we have observed antisymmetric MR in Co/Pt multilayers. Simultaneous domain imaging and transport measurements show…

其他凝聚态物理 · 物理学 2009-11-10 X. M. Cheng , S. Urazhdin , O. Tchernyshyov , C. L. Chien , V. I. Nikitenko , A. J. Shapiro , R. D. Shull

We report magnetotransport measurements in a HgTe quantum well with an inverted band structure, which is expected to be a two-dimensional (2D) topological insulator. A small magnetic field perpendicular the 2D layer breaks the time reversal…

介观与纳米尺度物理 · 物理学 2013-02-28 G. M. Gusev , E. B Olshanetsky , Z. D. Kvon , N. N. Mikhailov , S. A. Dvoretsky

Two-component systems with equal concentrations of electrons and holes exhibit non-saturating, linear magnetoresistance in classically strong magnetic fields. The effect is predicted to occur in finite-size samples at charge neutrality in…

介观与纳米尺度物理 · 物理学 2015-04-28 P. S. Alekseev , A. P. Dmitriev , I. V. Gornyi , V. Yu. Kachorovskii , B. N. Narozhny , M. Schuett , M. Titov

We have investigated the magnetoresistance of strongly asymmetric double-well structures formed by a thin AlGaAs barrier grown far from the interface in the GaAs buffer of standard heterostructures. In magnetic fields oriented parallel to…

介观与纳米尺度物理 · 物理学 2009-11-07 P. Svoboda , Y. Krupko , L. Smrcka , M. Cukr , T. Jungwirth , L. Jansen

A negative magnetoresistance under the in-plane magnetic field, reaching maximum 30-40% of its zero-field value in fields higher than ~12 T, has been found in wide Ge_{1-x}Si_x/Ge/p-Ge_{1-x}Si_x quantum wells (QW) containing the…

介观与纳米尺度物理 · 物理学 2015-06-24 M. V. Yakunin , G. A. Alshanskii , Yu. G. Arapov , V. N. Neverov , O. A. Kuznetsov

The magnetoresistance (MR) of a material is typically insensitive to reversing the applied field direction and varies quadratically with magnetic field in the low-field limit. Quantum effects [1], unusual topological band structures [2],…

A theory of recently discovered anomalous low-field magnetoresistance is developed for the system of two-dimensional electrons scattered by hard disks of radius $a,$ randomly distributed with concentration $n.$ For small magnetic fields the…

介观与纳米尺度物理 · 物理学 2009-11-10 Vadim V. Cheianov , A. P. Dmitriev , V. Yu. Kachorovskii

We study an asymmetric in field magnetoresistance that is frequently observed in magnetic films and, in particular, the odd longitudinal voltage peaks that appear during magnetization reversal in ferromagnetic films, with out-of-plane…

强关联电子 · 物理学 2015-05-13 A. Segal , O. Shaya , M. Karpovski , A. Gerber

We report the observation of a new phenomenon of colossal magnetoresistance in a 40 nm wide GaAs quantum well in the presence of an external magnetic field applied parallel to the high-mobility 2D electron layer. In a strong magnetic field,…

强关联电子 · 物理学 2015-03-13 Xiaoqing Zhou , B. A. Piot , M. Bonin , L. W. Engel , S. Das Sarma , G. Gervais , L. N. Pfeiffer , K. W. West

The spectrum of magnetic edge states and their transport properties in the presence of a perpendicular non-homogeneous magnetic field in a quantum wire formed by a parabolic confining potential are obtained. Systems are studied where the…

介观与纳米尺度物理 · 物理学 2010-08-03 S. M. Badalyan , F. M. Peeters

Two-component conductors -- e.g., semi-metals and narrow band semiconductors -- often exhibit unusually strong magnetoresistance in a wide temperature range. Suppression of the Hall voltage near charge neutrality in such systems gives rise…

介观与纳米尺度物理 · 物理学 2017-10-03 P. S. Alekseev , A. P. Dmitriev , I. V. Gornyi , V. Yu. Kachorovskii , B. N. Narozhny , M. Schütt , M. Titov

We have investigated experimentally the magnetoresistance of strongly asymmetric double-wells. The structures were prepared by inserting a thin Al$_{0.3}$Ga$_{0.7}$As barrier into the GaAs buffer layer of a standard modulation-doped…

介观与纳米尺度物理 · 物理学 2009-11-10 Yu. Krupko , L. Smrcka , P. Vasek , P. Svoboda , M. Cukr , L. Jansen

We present a theoretical analysis of recent experimental measurements of magnetoresistance in (Ga,Mn)As epilayers with perpendicular magnetic anisotropy. The model reproduces the field-antisymmetric anomalies observed in the longitudinal…

材料科学 · 物理学 2009-11-13 G. Xiang , N. Samarth

We report the observation of anomalies in the longitudinal magnetoresistance of tensile-strained (Ga,Mn)As epilayers with perpendicular magnetic anisotropy. Magnetoresistance measurements carried out in the planar geometry (magnetic field…

The resistance of a metal in a magnetic field can be very illuminating about its ground state. Some famous examples include the integer and fractional quantum Hall effects\cite{Klitzing-QHE,Tsui-FQHE}, Shubnikov-de Haas…

Experimentally an asymmetry of the reversal modes has been found in certain exchange bias systems. From a numerical investigation of the domain state model evidence is gained that this effect depends on the angle between the easy axis of…

凝聚态物理 · 物理学 2009-11-10 B. Beckmann , U. Nowak , K. D. Usadel

We predict unidirectional magnetoresistance effects arising in a bilayer composed of a nonmagnetic metal and a ferromagnetic insulator, whereby both longitudinal and transverse resistances vary when the direction of the applied electric…

介观与纳米尺度物理 · 物理学 2025-03-10 M. Mehraeen , Pengtao Shen , Steven S. -L. Zhang
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