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相关论文: Paramagnetic metal-insulator transition in the 2D …

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The interplay between magnetism and metal-insulator transitions is fundamental to the rich physics of the single band fermion Hubbard model (FHM). Recent progress in experiments on trapped ultra-cold atoms have made possible the exploration…

其他凝聚态物理 · 物理学 2009-04-10 G. G. Batrouni , V. G. Rousseau , R. T. Scalettar

To the Hubbard model on a square lattice we add an interaction, $W$, which depends upon the square of a near-neighbor hopping. We use zero temperature quantum Monte Carlo simulations on lattice sizes up to $16 \times 16$, to show that at…

强关联电子 · 物理学 2009-10-30 F. F. Assaad , M. Imada , D. J. Scalapino

We study the behavior of fermion liquid defined on hexagonal and triangular lattices with short-range repulsion at half filling. In strong coupling limit the Mott-Hubbard phase state is present, the main peculiarity of insulator state is a…

强关联电子 · 物理学 2021-09-17 Igor N. Karnaukhov , Kateryna Levchuk , Igor N. Dubinski

To explain the main features of the metal-insulator transition (MIT) in 2D we suggest a simple model taking into account strongly localized states in the band tail of 2D conductivity band with a specific emphasize of a role of…

无序系统与神经网络 · 物理学 2009-11-07 V. I. Kozub , and N. V. Agrinskaya

We explore the ground-state properties of the two-band Hubbard model with degenerate electronic bands, parametrized by nearest-neighbor hopping $t$, intra- and inter-orbital on-site Coulomb repulsions $U$ and $U^\prime$, and Hund coupling…

强关联电子 · 物理学 2018-08-30 Caterina De Franco , Luca F. Tocchio , Federico Becca

We study antiferromagnetism and single-particle properties in the two-dimensional half-filled Hubbard model at low temperature. Collective spin fluctuations are governed by a non-linear sigma model that we derive from the Hubbard model for…

强关联电子 · 物理学 2007-05-23 K. Borejsza , N. Dupuis

Numerical studies on Mott transitions caused by the control of the ratio between bandwidth and electron-electron interaction ($U$) are reported. By using the recently proposed path-integral renormalization group(PIRG) algorithm, physical…

强关联电子 · 物理学 2007-05-23 Tsuyoshi Kashima , Masatoshi Imada

The correlation-driven metal-insulator (Mott) transition at a solid surface is studied within the Hubbard model for a semi-infinite lattice by means of the dynamical mean-field theory. The transition takes place at a unique critical…

强关联电子 · 物理学 2009-10-31 M. Potthoff , W. Nolting

We report the application of the density-matrix renormalization group method to a spatially anisotropic two-dimensional Hubbard model at half-filling. We find a deconfinement transition induced by the transverse hopping parameter $t_y$ from…

强关联电子 · 物理学 2015-05-28 S. Moukouri , Eitan Eidelstein

A two-dimensional gas of non-interacting quasiparticles in a nearly periodic potential is considered at zero temperature. The potential is a superposition of a periodic potential, induced by the charge density wave of a Wigner crystal, and…

介观与纳米尺度物理 · 物理学 2007-05-23 K. Ziegler

The fermionic Hubbard model plays a fundamental role in the description of strongly correlated materials. Here we report on the realization of this Hamiltonian using a repulsively interacting spin mixture of ultracold $^{40}$K atoms in a 3D…

强关联电子 · 物理学 2010-04-06 U. Schneider , L. Hackermuller , S. Will , Th. Best , I. Bloch , T. A. Costi , R. W. Helmes , D. Rasch , A. Rosch

We study the single-orbital Hubbard model on the half-filled decorated honeycomb lattice. In the non-interacting theory at half-filling the Fermi energy lies within a flat band where strong correlations are enhanced. The lattice is highly…

强关联电子 · 物理学 2022-05-18 H. L. Nourse , Ross H. McKenzie , B. J. Powell

The antiferromagnetic ground state of the half-filled Hubbard model with the doubly degenerate orbital has been studied by using the slave-boson mean-field theory which was previously proposed by the present author. Numerical calculations…

强关联电子 · 物理学 2009-10-30 Hideo Hasegawa

A half-filled-band Hubbard model on an anisotropic triangular lattice (t in two bond directions and t' in the other) is studied using an optimization variational Monte Carlo method, to consider the Mott transition and superconductivity…

超导电性 · 物理学 2009-11-11 Tsutomu Watanabe , Hisatoshi Yokoyama , Yukio Tanaka , Jun-ichiro Inoue

The electron spectrum structure in the half-filled Hubbard model is considered in terms of the one-particle Green's functions within many-electron representation. A simple analytical generalization of the single-site Hubbard-III…

强关联电子 · 物理学 2009-11-07 V. Yu. Irkhin , A. V. Zarubin

By comparing the responses to an in-plane magnetic field near the metal-insulator transition (MIT), we find that the observed MIT in Si MOSFETs can be described by the non-perturbative Mott-Hubbard scenario. Interrelations between…

强关联电子 · 物理学 2007-05-23 Ping Sun

We consider the dimer Hubbard model within Dynamical Mean Field Theory to study the interplay and competition between Mott and Peierls physics. We describe the various metal-insulator transition lines of the phase diagram and the break down…

强关联电子 · 物理学 2018-01-17 O. Nájera , M. Civelli , V. Dobrosavljević , M. J. Rozenberg

We address the nature of the Mott transition in the Hubbard model at half-filling using cluster Dynamical Mean Field Theory (DMFT). We compare cluster DMFT results with those of single site DMFT. We show that inclusion of the short range…

强关联电子 · 物理学 2009-11-13 H. Park , K. Haule , G. Kotliar

A systematic study of the effect of magnetic field (h) on Hubbard model has been carried out at half filling within dynamical mean field theory. In agreement with previous studies, we find a zero temperature itinerant metamagnetic…

强关联电子 · 物理学 2015-05-19 D. Parihari , N. S. Vidhyadhiraja , A. Taraphder

We investigate the metal insulator transitions at finite temperature for the Hubbard model with diagonal alloy disorder. We solve the dynamical mean field theory equations with the non crossing approximation and we use the coherent…

强关联电子 · 物理学 2009-11-11 P. Lombardo , R. Hayn , G. I. Japaridze