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相关论文: Paramagnetic metal-insulator transition in the 2D …

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We investigate paramagnetic metal-insulator transitions in the infinite-dimensional ionic Hubbard model at finite temperatures. By means of the dynamical mean-field theory with an impurity solver of the continuous-time quantum Monte Carlo…

强关联电子 · 物理学 2014-05-20 Aaram J. Kim , M. Y. Choi , Gun Sang Jeon

In the previous papers (Journ. of Phys. Stud. 2, 362 (1998); cond-mat/9811213) we have studied metal-insulator transition in a generalized Hubbard model with correlated hopping at half-filling and zero temperature. The present paper is…

强关联电子 · 物理学 2007-05-23 Leonid Didukh , Vasyl Hankevych

The Hubbard model at temperatures above the N\'{e}el transition, despite being a paramagnet, can exhibit rich physics due to the interplay of Fermi surface, on-site interaction $U$ and thermal fluctuations. Nevertheless, the understanding…

强关联电子 · 物理学 2025-01-23 Yu-Feng Song , Youjin Deng , Yuan-Yao He

The Quantum Monte-Carlo simulations of the two-dimensional Hubbard model are presented for the half filling. The method based on the direct-space proposed by Suzuki and al., and Hirsch and al. was used. The states generated by this method…

强关联电子 · 物理学 2008-10-10 Bernard Martinie

The mass-imbalanced Hubbard model represents a continuous evolution from the Hubbard to the Falicov-Kimball model. We employ dynamical mean field theory and study the paramagnetic metal-insulator transition, which has a very different…

强关联电子 · 物理学 2017-06-29 Marie-Therese Philipp , Markus Wallerberger , Patrik Gunacker , Karsten Held

We have studied the impact of non-local electronic correlations at all length scales on the Mott-Hubbard metal-insulator transition in the unfrustrated two-dimensional Hubbard model. Combining dynamical vertex approximation, lattice quantum…

强关联电子 · 物理学 2015-03-05 T. Schäfer , F. Geles , D. Rost , G. Rohringer , E. Arrigoni , K. Held , N. Blümer , M. Aichhorn , A. Toschi

The zero temperature transition from a paramagnetic metal to a paramagnetic insulator is investigated in the Dynamical Mean Field Theory for the Hubbard model. The self-energy of the effective impurity Anderson model (on which the Hubbard…

强关联电子 · 物理学 2009-10-31 R. Bulla

The electronic properties of paramagnetic V_2O_3 are investigated by the ab-initio computational scheme LDA+DMFT(QMC). This approach merges the local density approximation (LDA) with dynamical mean-field theory (DMFT) and uses numerically…

强关联电子 · 物理学 2009-10-31 K. Held , G. Keller , V. Eyert , D. Vollhardt , V. I. Anisimov

We present well-controlled results on the metal to insulator transition (MIT) within the paramagnetic solution of the dynamical cluster approximation (DCA) in the two-dimensional Hubbard model at half-filling. In the strong coupling regime,…

强关联电子 · 物理学 2009-10-31 S. Moukouri , M. Jarrell

We investigate the metal-insulator transition in the half-filled Hubbard model on a two-dimensional triangular lattice using both the Kotliar-Ruckenstein slave-boson technique, and exact numerical diagonalization of finite clusters.…

强关联电子 · 物理学 2007-08-07 Massimo Capone , Luca Capriotti , Federico Becca , Sergio Caprara

We study the phase diagram of a square lattice Hubbard model with a perfect vacancy superstructure. The model can be also defined on a new bipartite lattice with each building blocks consisting of a minimal square. The non-interacting model…

强关联电子 · 物理学 2013-05-29 Hua Chen , Chao Cao , Jianhui Dai

We study the metal-to-insulator transition of the Hubbard model at zero temperatures in infinite dimensions. The coexistence of metallic and insulating solutions for a finite range of the interaction is established. It is shown that the…

凝聚态物理 · 物理学 2015-06-25 Marcelo J. Rozenberg , Goetz Moeller , Gabriel Kotliar

We use the Kotliar-Ruckenstein slave boson technique to treat the strong correlation of the Hubbard model. In a first part we discuss the metal to insulator transition that is occurring on the honeycomb lattice at half filling. We find the…

凝聚态物理 · 物理学 2007-05-23 Raymond Fresard , Klaus Doll

The interaction-driven evolution from a Fermi liquid to a Mott insulator is a hallmark of strongly correlated fermion systems. In this work, we present a {\it numerically unbiased} study of such metal-to-insulator crossover in the…

强关联电子 · 物理学 2026-02-27 Mingzhong Lu , Yu-Feng Song , Youjin Deng , Yuan-Yao He

The Hubbard model on the honeycomb lattice undergoes a quantum phase transition from a semimetallic to a Mott insulating phase and from a disordered to an anti-ferromagnetically phase. We show that these transitions occur simultaneously and…

强关联电子 · 物理学 2022-07-26 Johann Ostmeyer , Evan Berkowitz , Stefan Krieg , Timo A. Lähde , Thomas Luu , Carsten Urbach

We obtain exact numerical solutions of the degenerate Hubbard model in the limit of large dimensions (or large lattice connectivity). Successive Mott-Hubbard metal insulator transitions at integer fillings occur at intermediate values of…

强关联电子 · 物理学 2009-10-28 Marcelo J. Rozenberg

Using the determinant quantum Monte Carlo method, we investigate the metal-insulator transition in the interacting disordered Hubbard model of a Lieb lattice, in which the system characterizes the flat band centered at the Fermi level. By…

强关联电子 · 物理学 2022-12-06 Yueqi Li , Lingyu Tian , Tianxing Ma , Hai-Qing Lin

We examine the metal-insulator transition in a half-filled Hubbard model of electrons with random and all-to-all hopping and exchange, and an on-site non-random repulsion, the Hubbard $U$. We argue that recent numerical results of Cha et…

强关联电子 · 物理学 2020-05-13 Grigory Tarnopolsky , Chenyuan Li , Darshan G. Joshi , Subir Sachdev

The $2d$ Hubbard model with nearest-neighbour hopping on the square lattice and an average of one electron per site is known to undergo an extended crossover from metallic to insulating behavior driven by proliferating antiferromagnetic…

强关联电子 · 物理学 2020-03-19 Aaram J. Kim , Fedor Simkovic , Evgeny Kozik

The nature of the Mott-Hubbard metal-insulator transition in the infinite-dimensional Hubbard model is investigated by Quantum Monte Carlo simulations down to temperature T=W/140 (W=bandwidth). Calculating with significantly higher…

强关联电子 · 物理学 2009-10-31 J. Schlipf , M. Jarrell , P. G. J. van Dongen , N. Blümer , S. Kehrein , Th. Pruschke , D. Vollhardt
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