相关论文: Zeeman splitting of shallow donors in GaN

In this study, we observe that the conductance of a quantum point contact on a GaAs/AlGaAs double quantum well depends significantly on the magnetic field perpendicular to the two-dimensional electron gas. In the presence of the magnetic…

The strength of the Zeeman splitting induced by an applied magnetic field is an important factor for the realization of spin-resolved transport in mesoscopic devices. We measure the Zeeman splitting for a quantum point contact etched into a…

We employ effective mass theory for degenerate hole-bands to calculate the acceptor binding energies for Be, Mg, Zn, Ca, C and Si substitutional acceptors in GaN and AlN. The calculations are performed through the 6$\times $6…

We consider the hyperfine-mediated transition rate between Zeeman split spin states of the lowest orbital level in a GaAs quantum dot. We separate the hyperfine Hamiltonian into a part which is diagonal in the orbital states and another one…

Low-temperature electrical conductance spectroscopy measurements of quantum point contacts implemented in p-type GaAs/AlGaAs heterostructures are used to study the Zeeman splitting of 1D subbands for both in-plane and out-of-plane magnetic…

We report on spectroscopy of a single dopant atom in silicon by resonant tunneling between source and drain of a gated nanowire etched from silicon on insulator. The electronic states of this dopant isolated in the channel appear as…

We describe a direct observation of the excitonic giant Zeeman splitting in (Ga,Mn)N, a wide-gap III-V diluted magnetic semiconductor. Reflectivity and absorption spectra measured at low temperatures display the A and B excitons, with a…

We observe unusually narrow donor-bound exciton transitions (0.4 meV) in the photoluminescence spectra of GaN nanowire ensembles grown on Si(111) substrates at very high (> 850 degrees Celsius) temperatures. The spectra of these samples…

We investigate acceptor and donor states in GaN nanocrystals doped with a single substitutional impurity. Quantum dots (QD's) of zinc-blende structure and spherical shape are considered with the radius ranging from 4.5 to 67.7 A. The…

A density functional study is presented of the interstitial Zn$_i$, Ge$_i$, and N$_i$ in ZnGeN$_2$. Corrections to the band gap are included by means of the LDA+U method. The Zn and Ge interstitials are both found to strongly prefer the…

A direct observation of the giant Zeeman splitting of the free excitons in (Ga,Fe)N is reported. The magnetooptical and magnetization data imply the ferromagnetic sign and a reduced magnitude of the effective p-d exchange energy governing…

Neutron scattering in strong magnetic fields is used to show the spin-resonance in superconducting CeCoIn5 (Tc=2.3 K) is a doublet. The underdamped resonance (\hbar \Gamma=0.069 \pm 0.019 meV) Zeeman splits into two modes at E_{\pm}=\hbar…

We investigate the hyperfine energy levels and Zeeman splittings for homonuclear alkali-metal dimers in low-lying rotational and vibrational states, which are important for experiments designed to produce quantum gases of deeply bound…

We have measured the electrically detected magnetic resonance of channel-implanted donors in silicon field-effect transistors in resonant X- ($9.7\:$GHz) and W-band ($94\:$GHz) microwave cavities, with corresponding Zeeman fields of…

Semiconductor devices continue to press into the nanoscale regime, and new applications have emerged for which the quantum properties of dopant atoms act as the functional part of the device, underscoring the necessity to probe the quantum…

Interband pairing in multiband superconductors is often neglected because of its higher energetic cost compared with intraband pairing. We show that, in multiband systems, a Zeeman magnetic field can stabilize interband pairing through the…

We have developed a theory of the longitudinal $g$ factor of light holes in semiconductor quantum wells. It is shown that the absolute value of the light-hole $g$-factor can strongly exceed its value in the bulk and, moreover, the…

The donor binding energies associated with the ground state and a few excited states, are computed as a function of the dot size and the impurity position within two and three dimensional GaAs quantum dots. The calculation has been done…

The wave function and binding energy for shallow donors in GaAs are calculated within the tight binding (TB) approach, for supercells containing up to two million atoms. The resulting solutions, coupled with a scaling law, allow…

We have performed density functional theory (DFT) calculations to characterize the energetics, and the atomic and electronic structure, of stacking faults in GaN, both in the stable hexagonal wurtzite (wz) phase and in the metastable cubic…