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相关论文: Interface states in junctions of two semiconductor…

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Localized interface states in abrupt semiconductor heterojunctions are studied within a tight-binding model. The intention is to provide a microscopic foundation for the results of similar studies which were based upon the two-band model…

材料科学 · 物理学 2009-11-07 A. V. Kolesnikov , R. Lipperheide , U. Wille

We show that interface bound states are formed at isolated graphene-superconductor junctions. These states arise due to the interplay of virtual Andreev and normal reflections taking place at these interfaces. Simple analytical expressions…

介观与纳米尺度物理 · 物理学 2015-05-13 P. Burset , W. Herrera , A. Levy Yeyati

A new type of states in graphene-based planar heterojunctions has been studied in the envelope wave function approximation. The condition for the formation of these states is the intersection between the dispersion curves of graphene and…

介观与纳米尺度物理 · 物理学 2012-08-08 P. V. Ratnikov , A. P. Silin

We consider a junction between two topological insulators, and calculate the properties of the interface states with an effective low energy Hamiltonian for topological insulators with a single cone on the surface. This system bears a close…

介观与纳米尺度物理 · 物理学 2013-03-14 Christophe De Beule , Bart Partoens

Interface states at a boundary between regions with different spin-orbit interactions (SOIs) in two-dimensional (2D) electron systems are investigated within the one-band effective mass method with generalized boundary conditions for…

介观与纳米尺度物理 · 物理学 2011-09-21 Aleksei A. Sukhanov , Vladimir A. Sablikov

We consider a smooth interface between a topological nodal-line semimetal and a topologically trivial insulator (e.g., the vacuum) or another semimetal with a nodal ring of different radius. Using a low-energy effective Hamiltonian…

介观与纳米尺度物理 · 物理学 2024-02-26 Francesco Buccheri , Reinhold Egger , Alessandro De Martino

Topological phases of matter are often characterized by interface states, which were already known to occur at the boundary of a band-inverted junction in semiconductor heterostructures. In IV-VI compounds such interface states are properly…

介观与纳米尺度物理 · 物理学 2017-09-05 A. Diaz-Fernandez , F. Dominguez-Adame

Quasiparticle bound states are found theoretically on transparent interfaces of d-wave superconductors (dSC) with charge density wave solids (CDW), as well as s-wave superconductors (sSC) with d-density waves (DDW). These bound states…

超导电性 · 物理学 2009-11-10 I. V. Bobkova , Yu. S. Barash

We present a detailed theoretical investigation of interfaces and junctions involving itinerant antiferromagnets. By solving the Bogoliubov-de Gennes equations with a tight-binding model on a square lattice, we study both the…

超导电性 · 物理学 2009-11-11 B. M. Andersen , I. V. Bobkova , P. J. Hirschfeld , Yu. S. Barash

There is no assurance that interface states can be found at the boundary separating two materials. As a strong perturbation typically favors wave localization, it is natural to expect that an interface state should form more easily in the…

光学 · 物理学 2014-01-28 Xueqin Huang , Meng Xiao , Zhao-Qing Zhang , C. T. Chan

Influence of surface pair breaking, barrier transmission and phase difference on quasiparticle bound states in junctions with d-wave superconductors is examined. Based on the quasiclassical theory of superconductivity, an approach is…

超导电性 · 物理学 2009-10-31 Yu. S. Barash

The stressed heterojunctions with antiferromagnetic ordering in which the constituents have oppposite band edge symmetry and their gaps have opposite signs have been investigated. The interface states have been shown to appear in these…

凝聚态物理 · 物理学 2007-05-23 V. G. Kantser , N. M. Malkova

As a prototypical example for a heterostructure combining a weakly and a strongly interacting quantum many-body system, we study the interface between a semiconductor and a Mott insulator. Via the hierarchy of correlations, we derive and…

We theoretically study electronic states in graded-gap junctions of IV-VI compounds with band inversion. Using a two-band model within the ${\bf k}\cdot{\bf p}$ approximation and assuming that the gap and the gap centre present linear…

凝聚态物理 · 物理学 2016-08-31 Francisco Dominguez-Adame

Utilizing the hierarchy of correlations in the context of a Fermi-Hubbard model, we deduce the presence of quasi-particle bound states at the interface between a Mott insulator and a semiconductor, as well as within a…

强关联电子 · 物理学 2026-01-08 Jan Verlage , Peter Kratzer

Energy dispersion and spin orientation of the protected states at interfaces between topological insulators (TIs) and non-topological materials depend on the charge redistribution, strain, and atomic displacement at the interface. Knowledge…

介观与纳米尺度物理 · 物理学 2020-09-29 Eklavya Thareja , Ilya Vekhter , Mahmoud M. Asmar

We study transport through interfaces in topological nodal-line semimetals, focusing on two geometries: a single interface between two large samples, one nodal-line semimetal and one metal, and an infinite nodal-line semimetal slab in…

介观与纳米尺度物理 · 物理学 2024-05-14 Mattia Rudi , Alessandro De Martino , Kristof Moors , Domenico Giuliano , Francesco Buccheri

Spectra and spin structures of Andreev interface states and the Josephson current are investigated theoretically in junctions between clean superconductors (SC) with ordered interlayers. The Josephson current through the…

超导电性 · 物理学 2009-11-11 Yuri Barash , I. V. Bobkova , Brian M. Andersen , T. Kopp , P. J. Hirschfeld

In this study we try to answer the qustion : What happens when explicit constraints are introduced such that the low energy, long wavelength modes of a system are unavailable ? This question has assumed some importance in recent years due…

软凝聚态物质 · 物理学 2009-11-11 Abhishek Chaudhuri

We find stationary thin-brane geometries that are dual to far-from-equilibrium steady states of two-dimensional holographic interfaces. The flow of heat at the boundary agrees with the result of CFT and the known energy-transport…

高能物理 - 理论 · 物理学 2021-12-01 Constantin Bachas , Zhongwu Chen , Vassilis Papadopoulos
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