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相关论文: Electronic structure of NiS$_{1-x}$Se$_x$ across t…

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We present angle-resolved photoemission spectroscopy of Eu(1-x)Gd(x)O through the ferromagnetic metal-insulator transition. In the ferromagnetic phase, we observe Fermi surface pockets at the Brillouin zone boundary, consistent with density…

强关联电子 · 物理学 2012-07-20 D. E. Shai , A. J. Melville , J. W. Harter , E. J. Monkman , D. W. Shen , A. Schmehl , D. G. Schlom , K. M. Shen

We have measured the photoemission spectra of Nd$_{1-x}$Sm$_{x}$NiO$_{3}$, where the metal-insulator transition and the N\'{e}el ordering occur at the same temperature for $x \lesssim 0.4$ and the metal-insulator transition temperature…

强关联电子 · 物理学 2009-11-07 K. Okazaki , T. Mizokawa , A. Fujimori , E. V. Sampathkumaran , M. J. Martinez-Lope , J. A. Alonso

Magnetic phase diagram of NiS2-xSex has been reexamined by systematic studies of electrical resistivity, uniform magnetic susceptibility and neutron diffraction using single crystals grown by a chemical transport method. The electrical…

强关联电子 · 物理学 2009-10-31 M. Matsuura , H. Hiraka , K. Yamada , Y. Endoh

The thermodynamics of the antiferromagnetic ordering transition in NiO and the photoelectron spectra in the antiferromagnetic phase are studied by the Variational Cluster Approximation. Using realistic Racah parameters to describe the…

强关联电子 · 物理学 2015-04-01 R. Eder

Optical reflectivity study has been made on the hexagonal (NiAs-type) Ni_{1-d}S in order to probe its electronic properties, in particular those associated with the metal-nonmetal transition in this compound. Samples with d=0.005 and 0.02…

强关联电子 · 物理学 2009-10-31 H. Okamura , J. Naitoh , N. Nanba , M. Matoba , M. Nishioka , S. Anzai

NiS, exhibiting a text-book example of a first-order transition with many unusual properties at low temperatures, has been variously described in terms of conflicting descriptions of its ground state during the past several decades. We…

强关联电子 · 物理学 2013-12-02 S. K. Panda , I. Dasgupta , E. Sasioglu , S. Blugel , D. D. Sarma

The temperature dependence of the electronic structure of CeBi arising from two types of antiferromagnetic transitions based on optical conductivity ($\sigma(\omega)$) was observed. The $\sigma(\omega)$ spectrum continuously and…

强关联电子 · 物理学 2009-11-10 Shin-ichi Kimura , Mitsuru Okuno , Hideaki Kitazawa , Fumihiko Ishiyama , Osamu Sakai

We have performed a detailed high-resolution electron spectroscopic investigation of NiS$_2$ and related Se-substituted compounds NiS$_{2-x}$Se$_x$, which are known to be gapped insulators in the bulk at all temperatures. A large spectral…

We investigate the electronic structure of the metallic NiS$_{1-x}$Se$_x$ system using various electron spectroscopic techniques. The band structure results do not describe the details of the spectral features in the experimental spectrum,…

强关联电子 · 物理学 2009-10-31 S. R. Krishnakumar , N. Shanthi , Priya Mahadevan , D. D. Sarma

The phase diagram of FeSi1-xGex, obtained from magnetic, thermal and transport measurements on single crystals, shows a first-order transition from a correlated electron semiconductor to a ferromagnetic metal at a critical concentration, x…

强关联电子 · 物理学 2009-11-10 S. Yeo , S. Nakatsuji , A. D. Bianchi , P. Schlottmann , Z. Fisk , L. Balicas , P. A. Stampe , R. J. Kennedy

We present angle-resolved photoemission spectroscopy results for thin films of the three-dimensional manganese perovskite La$_{1-x}$Sr$_{x}$MnO$_{3}$. We show that the transition temperature ($T_c$) from the paramagnetic insulating to…

强关联电子 · 物理学 2008-04-23 M. Shi , M. C. Falub , P. R. Willmott , J. Krempasky , R. Herger , L. Patthey , K. Hricovini , C. Falub , M. Schneider

Electronic structure of NiS_{2-x}Se_x system has been investigated for various compositions (x) using x-ray photoemission spectroscopy. An analysis of the core level as well as the valence band spectra of NiS_2 in conjunction with many-body…

强关联电子 · 物理学 2009-11-10 S. R. Krishnakumar , D. D. Sarma

We studied the electronic structure of a layered antiferromagnetic metal, EuSnP, in the paramagnetic and in the antiferromagnetic phase using angle resolved photoemission spectroscopy (ARPES) alongside density functional theory (DFT) based…

We present results of comprehensive study of electronic properties of (TiZrNbCu)(1-x)Ni(x) metallic glasses performed in broad composition range x encompassing both, high entropy (HE) range, and conventional Ni-base alloy concentration…

The contrasting groundstates of isoelectronic and isostructural FeSi and FeGe can be explained within an extended local density approximation scheme (LDA+U) by an appropriate choice of the onsite Coulomb repulsion, $U$ on the Fe-sites. A…

凝聚态物理 · 物理学 2009-11-07 V. I. Anisimov , R. Hlubina , M. A. Korotin , V. V. Mazurenko , T. M. Rice , A. O. Shorikov , M. Sigrist

The correlation between magnetic properties and microscopic structural aspects in the diluted magnetic semiconductor Ge$_{1-x}$Mn$_{x}$Te is investigated by x-ray diffraction and magnetization as a function of the Mn concentration $x$. The…

强关联电子 · 物理学 2017-06-20 M. Kriener , T. Nakajima , Y. Kaneko , A. Kikkawa , D. Hashizume , K. Kato , M. Takata , T. Arima , Y. Tokura , Y. Taguchi

The electronic structure change of NiS$_{2-x}$Se$_x$ as a function of Se concentration $x$ has been studied by Ni $L$-edge X-ray absorption spectroscopy (XAS). The XAS spectra show distinct features in Ni $L_3$ edge, indicating whether the…

强关联电子 · 物理学 2018-02-14 Jinwon Jeong , Kyung Ja Park , En-Jin Cho , Han-Jin Noh , Sung-Baek Kim , Hyeong-Do Kim

The electronic structure of the new superconductor, SmO$_{1-x}$F$_x$FeAs ($x=0.15$), has been studied by angle-integrated photoemission spectroscopy. Our data show a sharp feature very close to the Fermi energy, and a relative flat…

超导电性 · 物理学 2008-05-31 H. W. Ou , J. F. Zhao , Y. Zhang , D. W. Shen , B. Zhou , L. X. Yang , C. He , F. Chen , M. Xu , T. Wu , X. H. Chen , Y. Chen , D. L. Feng

The simplified bandstructure introduced by Mazurenko et al to model FeSi is used to analyze the singlet semiconductor to ferromagnetic metal transition in the isoelectronic isostructural alloys, FeSi$_{1-x}$Ge$_x$. The complex bandstructure…

强关联电子 · 物理学 2015-05-27 Kai-Yu Yang , Y. Yamashita , A. M. Läuchli , M. Sigrist , T. M. Rice

We have performed detailed studies of the temperature evolution of the electronic structure in Ba(Fe(1-x)Ru(x))2As2 using Angle Resolved Photoemission Spectroscopy (ARPES). Surprisingly, we find that the binding energy of both hole and…

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