相关论文: Circuit model for spin-bottleneck resistance in ma…

We introduce a new class of spintronics devices in which a spin-valve like effect results from strong spin-orbit coupling in a single ferromagnetic layer rather than from injection and detection of a spin-polarized current by two coupled…

Coherent spin-dependent electronic transport is investigated in a molecular junction made of polymeric chain attached to ferromagnetic electrodes (Ni and Co, respectively). Molecular system is described by a simple Huckel model, while the…

The electron transport properties of hybrid ferromagnetic|normal metal structures such as multilayers and spin valves depend on the relative orientation of the magnetization direction of the ferromagnetic elements. Whereas the contrast in…

Magnetic tunnel junctions comprising of an insulator sandwiched between two ferromagnetic films are the simplest spintronic devices. Theoretically, these can be modeled by a metallic Hamiltonian in both the lattice and the continuum with an…

We present a complete theory of the spin torque phenomena in a ultrasmall nanomagnet coupled to non-collinear ferromagnetic electrodes through tunnelling junctions. This model system can be described by a simple microscopic model which…

The electrical resistance of ferromagnetic/normal-metal (F/N) heterostructures depends on the nature of the junctions which may be tunnel barriers, point contacts, or intermetallic interfaces. For all junction types, the resistance of…

Spintronics is an approach to electronics in which the spin of the electrons is exploited to control the electric resistance R of devices. One basic building block is the spin-valve, which is formed if two ferromagnetic electrodes are…

Processes which flip the spin of an electron tunneling in a junction made up of magnetic electrodes are studied. It is found that: i) Magnetic impurities give a contribution which increases the resistance and lowers the magnetoresistance,…

Tunneling Magnetoresistance between two ferrromagnets is an issue of fundamental importance in spintronics. In this work, we show that tunneling magnetoresistance can also emerge in junctions composed of ferromagnets and time-reversal…

We propose a ferromagnetic spintronic system, which consists of two serial connected resonant tunneling diodes. One diode is nonmagnetic whereas the other comprises a ferromagnetic emitter and quantum well. Using a selfconsistent coherent…

A theory of spin-transport in hybrid normal metal - ferromagnetic electronic circuits is developed, taking into account non-collinear spin-accumulation. Spin-transport through resistive elements is described by 4 conductance parameters.…

Controlling the magnetization reversal process of magnetic elements is important for a wide range of applications that make use of magnetoresistive effects, but is difficult to achieve for devices that require adjacent thin film structures…

Magnetic tunnel junctions (MTJs), composed of two ferromagnetic electrodes separated by a thin insulating barrier layer, are currently used in spintronic devices, such as magnetic sensors and magnetic random access memories. Recently,…

Spin accumulation in a paramagnetic semiconductor due to voltage-biased current tunneling from a polarized ferromagnet is experimentally manifest as a small additional spin-dependent resistance. We describe a rigorous model incorporating…

Based on the non-equilibrium Green's function (NEGF) technique and the Landauer-B\"{u}ttiker theory, the possibility of a molecular spin-electronic device, which consists of a single C$_{60}$ molecule attached to two ferromagnetic…

The spin-valve complex magnetoimpedance of symmetric ferromagnet/normal metal/ferromagnet junctions is investigated within the drift-diffusion (standard) model of spin injection. The ac magnetoresistance---the real part difference of the…

Results of theoretical study of spin-polarized tunneling in ferromagnet/superconductor junctions are presented. Spin and charge currents are calculated as a function of applied voltage and spin polarization in a ferromagnet. The model takes…

The electric resistance of ferromagnet/normal-metal/ferromagnet perpendicular spin valves depends on the relative angle between the magnetization directions. In contrast to common wisdom, this angular magnetoresistance is found to be not…

The recently suggested mechanism [Y. Song and H. Dery, Phys. Rev. Lett. 113, 047205 (2014)] of the three-terminal spin transport is based on the resonant tunneling of electrons between ferromagnetic and normal electrodes via an impurity.…

We study the tunneling current through a mesoscopic two-terminal ring with spin-orbit coupling, which is threaded by a magnetic flux. The electron-electron interaction in the ring is described in terms of a Tomonaga-Luttinger model which…