相关论文: Valley Phase Transition in Si MOSFETs

A two-dimensional electron gas (2DEG) in two-valley semiconductors has two discrete degrees of freedom given by the spin and valley quantum numbers. We analyze the zero-temperature magnetic instabilities of two-valley semiconductors with…

We compute the valley/magnetic phase diagram of mono layers of transition metal dichalcogenides in the hole doped region where spin-orbit effects are particularly relevant. Taking into account the moderate to high local electron-electron…

We note that data on Si/SiGe heterostructures, reported in the Comment of Ismail et al. (cond-mat/9707061) on our recent Letter (cond-mat/9608101), are insufficient to establish the claim for a transition to a metallic phase.

The valley degree of freedom of electrons in two-dimensional transition metal dichalcogenides has been extensively studied by theory, optical and optoelectronic experiments. However, generation and detection of pure valley current without…

A gate electric field has a small but non-negligible effect on the phase of the valley-orbit coupling in Si quantum dots. Finite interdot tunneling between valley eigenstates in a double quantum dot is enabled by a small difference in the…

The in-plane magnetoconductance of the strongly interacting two-dimensional electron system in a silicon MOSFET (metal-oxide-semiconductor-field-effect transistor) exhibits an unmistakeable kink at a well-defined electron density, $n_k$.…

Using symmetry breaking strain to tune the valley occupation of a two-dimensional (2D) electron system in an AlAs quantum well, together with an applied in-plane magnetic field to tune the spin polarization, we independently control the…

We explore a solid state qubit defined on valley isospin of an electron confined in a gate-defined quantum dot created in an area of monolayer MoS$_2$/WS$_2$ lateral junction, where a steep dipolar potential emerges. We show that the…

The recent experimental observation of a metal-insulator transition in two dimensions prompts a re-examination of the theory of disordered interacting systems. We argue that the existing theory permits the existence of a metallic phase and…

This work investigates the feasibility of electrical valley filtering for holes in transition metal dichalcogenides. We look specifically into the scheme that utilizes a potential barrier to produce valley-dependent tunneling rates, and…

This paper uncovers a pitfall in the phase transition mechanism of Vicsek et al. [Phys. Rev. Lett. 75, 1226 (1995)] which occurs with fairly high probability and leads to complete breakdown of the model dynamics.

Motivated by interesting recent experimental results, we consider theoretically charged-impurity scattering-limited 2D electronic transport in (100), (110), and (111)-Si inversion layers at low temperatures and carrier densities, where…

Valleytronics is rapidly emerging as an exciting area of basic and applied research. In two dimensional systems, valley polarisation can dramatically modify physical properties through electron-electron interactions as demonstrated by such…

We present a theoretical realization of quantum spin and quantum valley Hall effects in silicene. We show that combination of an electric field and intrinsic spin-orbit interaction leads to quantum phase transitions at the charge neutrality…

We report novel manifestation of the valley splitting for the two valley electron system in (100) Si-inversion layers at low carrier density. We found that valley splitting causes almost 100% modulation of the Shubnikov de Haas oscillations…

Memory or transistor devices based on electron's spin rather than its charge degree of freedom offer certain distinct advantages and comprise a cornerstone of spintronics. Recent years have witnessed the emergence of a new field,…

The phase diagram of the filled skutterudite CeOs$_4$Sb$_{12}$ has been mapped in fields $H$ of up to 60 T and temperatures $T$ down to 0.5 K using resistivity, magnetostriction, and MHz conductivity. The valence transition separating the…

The metal-insulator transition (MIT) is an exceptional test bed for studying strong electron correlations in two dimensions in the presence of disorder. In the present study, it is found that in contrast to previous experiments on…

We propose a scaling theory of 2D metal insulator transition discovered by Kravchenko and coworkers. In this theory conductance/resistance duality is an exact relation. The exponent of the stretched exponential in $\sigma(T)$ is determined…

Silicon carbide (SiC) metal-oxide-semiconductor field-effect-transistors (MOSFETs) enable high-voltage and high-temperature power conversion. Compared to Si devices, they suffer from pronounced gate leakage due to the reduced electron…