相关论文: Criticality in the Integer Quantum Hall Effect

With the recent observation of graphene-like Landau levels at the surface of topological insulators, the possibility of fractional quantum Hall effect, which is a fundamental signature of strong correlations, has become of interest. Some…

An N-channel generalization of the network model of Chalker and Coddington is considered. The model for N = 1 is known to describe the critical behavior at the plateau transition in systems exhibiting the integer quantum Hall effect. Using…

We study relevant perturbations at the spin quantum Hall critical point using a network model formulation. The model has been previously mapped to classical percolation on a square lattice, and we use the mapping to extract exact analytical…

Physical properties of anisotropic compressible quantum Hall states and their implications to integer quantum Hall effect are studied based on a mean field theory on the von Neumann lattice. It is found that the Hall gas has unusual…

We present a formalism that simultaneously incorporates the effect of quantum tunneling and spin diffusion on spin Hall magnetoresistance observed in normal metal/ferromagnetic insulator bilayers (such as Pt/YIG) and normal…

A model for description of materials with narrow energy bands is proposed. It is shown that in narrow-band materials electron-hole symmetry is absent in contrast to the Hubbard model. In this paper metal-insulator transition is studied. The…

We study the localization properties in the transition from a two-dimensional electron gas at zero magnetic field into an integer quantum Hall (QH) liquid. By carrying out a direct calculation of the localization length for a finite size…

The nature of a metal--insulator transition tuned by external gates in quantum Hall (QH) systems with point constrictions at integer bulk filling, as reported in recent experiments of Roddaro et al. [1], is addressed. We are particularly…

The quantum Hall effect under the influence of gravity and inertia is studied in a unified way. We make use of an algebraic approach, as opposed to an analytic approach. We examine how both the integer and the fractional quantum Hall…

Low frequency AC-measurements are commonly used to determine the voltage and currents through mesoscopic devices. We calculate the effect of the alternating Hall voltage on the recorded time-averaged voltage in the presence of a top-gate…

The metal-insulator transition (MIT) is an exceptional test bed for studying strong electron correlations in two dimensions in the presence of disorder. In the present study, it is found that in contrast to previous experiments on…

Quantum phase transitions occur at zero temperature when some non-thermal control-parameter like pressure or chemical composition is changed. They are driven by quantum rather than thermal fluctuations. In this review we first give a…

The purpose of these lectures is to describe the basic theoretical structures underlying the rich and beautiful physics of the quantum Hall effect. The focus is on the interplay between microscopic wavefunctions, long-distance effective…

Hall coefficient implies the mechanism for reconstruction of a Fermi surface, distinguishing competing scenarios for Mott criticality such as electron fractionalization, dynamical mean-field theory, and metal-insulator transition driven by…

We consider the quantum Hall effect in terms of an effective field theory formulation of the edge states, providing a natural common framework for the fractional and integral effects.

By studying the quantum Hall effect of stationary states with high values of injected current using a von Neumann lattice representation, we found that broadening of extended state bands due to a Hall electric field occurs and causes the…

The past few years have produced major advances in our understanding of the quantum Hall effects---quantized and unquantized. Theories based on a mathematical transformation, where the electrons are replaced by a set of fermions interacting…

In this work we investigate an unusual transport phenomenon observed in two-dimensional electron gas under integer quantum Hall effect conditions. Our calculations are based on the screening theory, using a semi-analytical model. The…

Zero-temperature or quantum phase transitions in itinerant electronic systems both with and without quenched disordered are discussed. Phase transitions considered include, the ferromagnetic transition, the antiferromagnetic transition, the…

There are compelling reasons to seek a new coherent description of the Quantum Hall Effects (QHE). The theories of the `Integer' (IQHE) and the `Fractional' (FQHE) quantum Hall effects are very different at present, despite their remarkable…