相关论文: Termination of the spin-resolved integer quantum H…
The recent discovery of the 3D quantum Hall effect in $\mathrm{HfTe_5}$ has also revealed puzzling signatures of possible 3D fractionalization. Beyond the first plateau associated with the lowest Landau band, Hall conductivity exhibits a…
We examine the effect of disorder on the electromagnetic response of quantum Hall stripes using an effective elastic theory to describe their low-energy dynamics, and replicas and the Gaussian variational method to handle disorder effects.…
The integer quantum Hall effect is a topological state of quantum matter in two dimensions, and has recently been observed in three-dimensional topological insulator thin films. Here we study the Landau levels and edge states of surface…
We study the quantum Hall states in the lowest Landau level for a single wide quantum well. Due to a separation of charges to opposite sides of the well, a single wide well can be modelled as an effective two level system. We provide…
Computer modelling of the integer quantum Hall effect based on self-consistent Hartee-Fock calculations has now reached an astonishing level of maturity. Spatially-resolved studies of the electron density at near macroscopic system sizes of…
We consider the charged excitations in the quantum Hall effect with a large Zeeman splitting at filling factor nu=2. When the Zeeman splitting is increased over a critical value the groundstate undergoes a first order phase transition from…
Layered singlet paired superconductors with disorder and broken time reversal symmetry are studied. The phase diagram demonstrates charge-spin separation in transport. In terms of the average intergrain transmission and the interlayer…
We report tilted-field transport measurements in the quantum-Hall regime in an InAs/In_0.75Ga_0.25As/In_0.75Al_0.25As quantum well. We observe anti-crossings of spin-split Landau levels, which suggest a mixing of spin states at Landau level…
We investigate non-equilibrium transport in the reentrant integer quantum Hall phases of the second Landau level. At high currents, we observe a transition from the reentrant integer quantum Hall phases to classical Hall-conduction.…
The quantum Hall effect was originally observed in a two-dimensional electron gas forming Landau levels when exposed to a strong perpendicular magnetic field and was later generalized to Chern insulators without net magnetization. Here,…
In two-dimensional hole systems confined to wide GaAs quantum wells, where the heavy- and light- hole states are close in energy, we observe a very unusual crossing of the lowest two Landau levels as the sample is tilted in magnetic field.…
We report experimental studies of disorder-induced transitions between quantum-Hall, metallic, and insulating states in a very dilute two-dimensional electron system in silicon at a magnetic field corresponding to Landau level filling…
By taking into account the charge and spin orderings and the exchange interactions between all the Landau levels, we investigate the integer quantum Hall effect of electrons in graphene using the mean-field theory. At the fillings $\nu =…
We report on an absolute measurement of the electronic spin polarization of the $\nu=1$ integer quantum Hall state. The spin polarization is extracted in the vicinity of $\nu=1$ (including at exactly $\nu=1$) via resistive NMR experiments…
We investigate the quantum Hall problem in the lowest Landau level in two dimensions, in the presence of an arbitrary number of $\delta$-function potentials arranged in different geometric configurations. When the number of delta functions…
We study magnetotransport in a high mobility Si two-dimensional electron system by in situ tilting of the sample relative to the magnetic field. A pronounced dip in the longitudinal resistivity is observed during the Landau level crossing…
The integer quantum Hall effect features a paradigmatic quantum phase transition. Despite decades of work, experimental, numerical, and analytical studies have yet to agree on a unified understanding of the critical behavior. Based on a…
Using a magnetocapacitance technique, we determine the magnetic field of the spin transition, B*, at filling factor nu=2/3 in the 2D electron system in GaAs/AlGaAs heterojunctions. The field B* is found to decrease appreciably as the wave…
Quantum transport properties in quantum Hall wires in the presence of spatially correlated disordered magnetic fields are investigated numerically. It is found that the correlation drastically changes the transport properties associated…
Sharp localization transitions of chiral edge states in disordered quantum wires, subject to strong magnetic field, are shown to be driven by crossovers from two- to one-dimensional localization of bulk states. As a result, the two-terminal…