相关论文: Universality and Phase Diagram around Half-filled …

It is well established that the ground states of a two-dimensional electron gas with half-filled high ($N \ge 2$) Landau levels are compressible charge-ordered states, known as quantum Hall stripe (QHS) phases. The generic features of QHSs…

We have measured the low-temperature transport properties of a high-mobility front-gated GaAs/Al_{0.33}Ga_{0.67}As heterostructure. By changing the applied gate voltage, we can vary the amount of disorder within the system. At a Landau…

Reports of weak local minima in the magnetoresistance at $\nu=2+3/5$, $2+3/7$, $2+4/9$, $2+5/9$, $2+5/7$, and $2+5/8$ in the second Landau level of the electron gas in GaAs/AlGaAs left open the possibility of fractional quantum Hall states…

At even-denominator Landau level filling fractions, such as $\nu=1/2$, the ground state, in most cases, has no energy gap, and there is no quantized plateau in the Hall conductance. Nevertheless, the states exhibit non-trivial low-energy…

A two-dimensional quantum Hall system is studied for a wide class of potentials including single-body random potentials and repulsive electron-electron interactions. We assume that there exists a non-zero excitation gap above the ground…

The Hall conductivity $\sigma_{\rm xy}$ of a two-dimensional electron system is quantized in units of $e^2/h$ when the Fermi level is located in the mobility gap between two Landau levels. We consider the deviation of $\sigma_{\rm xy}$ from…

The scaling behavior of the quantum phase transition from an insulator to a quantum Hall plateau state has often been examined within systems realizing Landau levels. We study the topological transition in energy band models with nonzero…

The observation of new insulating phases of two-dimensional electrons in the first excited Landau level is reported. These states, which are manifested as re-entrant integer quantized Hall effects, exist alongside well-developed…

In a GaAs/AlGaAs two-dimensional electron system with two occupied subbands, the experimentally determined phase diagram in the density-magnetic field plane exhibits rich topological features. Ring-like structures are observed at even…

Under hydrostatic pressure, the ground state of a two-dimensional electron gas at $\nu=5/2$ changes from a fractional quantum Hall state to the stripe phase. By measuring the energy gap of the fractional quantum Hall state and of the onset…

The temperature driven flow lines of the Hall and dissipative magnetoconductance data (\sigma_{xy},\sigma_{xx}) are studied in the fractional quantum Hall regime for a 2D electron system in GaAs/Al_{x}Ga_{1-x}As heterostructures. The flow…

We study the microscopic model of electrons in the partially-filled lowest Landau level interacting via the Coulomb potential by the diagrammatic theory within the GW approximation. In a wide range of filling fractions and temperatures, we…

Half-filled Landau levels host an emergent Fermi-liquid which displays an instability towards pairing, culminating in a gapped even-denominator fractional quantum Hall ground state. While this pairing may be probed by tuning the…

We focused on the transverse AC magneto-conductance of a high mobility $p$-GaAs/AlGaAs quantum well ($p=1.2\times 10^{11}$~cm$^{-2}$) in the vicinity of two values of the Landau level filling factor $\nu$: $\nu =1$ (integer quantum Hall…

A proposal of the existence of an {\em Anomalous} phase ($\mathcal{A}$ phase) [https://journals.aps.org/prl/abstract/10.1103/PhysRevLett.131.056202 Das et al., Phys. Rev. Lett. 131, 056202 (2023)] at the experimental range of moderate…

Following recent work of Halperin, Lee, and Read, and Kalmeyer and Zhang, a double-layer electron system with total Landau-level filling factor $\nu=1/2$ is mapped onto an equivalent system of fermions in zero average magnetic field…

We measure the chemical potential jump across the fractional gap in the low-temperature limit in the two-dimensional electron system of GaAs/AlGaAs single heterojunctions. In the fully spin-polarized regime, the gap for filling factor…

At a very low temperature of 9mK, electrons in the 2nd Landau level of an extremely high mobility two-dimensional electron system exhibit a very complex electronic behavior. With varying filling factor, quantum liquids of different origins…

We report low temperature electronic transport results on the fractional quantum Hall effect of composite fermions at Landau level filling nu = 4/11 in a very high mobility and low density sample. Measurements were carried out at…

The observation of coherent quantum transport phenomena in metals and semiconductors is limited by the eventual loss of phase coherence of the conducting electrons. We use the weak localization effect to measure the low-temperature…