相关论文: Conductance through a Magnetic Domain Wall in Doub…

We consider the electronic transport in bounded semiconductors in the presence of an external magnetic field. Taking into account appropriate boundary conditions for the current density at the contacts, a change in the magnetoresistance of…

One-electron tunneling through a quantum dot with a strong magnetic field in the direction of the current is studied. The linear magneto-conductance is computed for a model parabolic dot with seven electrons in the intermediate states and…

Domain walls in soft permalloy strips may exhibit various equilibrium micromagnetic structures depending on the width and thickness of the strip, ranging from the well-known transverse and vortex walls in narrow and thin strips to double…

We study the dynamics of a magnetic domain wall, inserted in, or juxtaposed to, a conventional superconductor, via the passage of a spin polarized current through a FSF junction. Solving the Landau-Lifshitz-Gilbert equation of motion for…

We investigate the spin-dependent transport properties of a two-dimensional electron gas formed at oxides' interface in the presence of a magnetic field. We consider several scenarios for the oxides' properties, including oxides with…

We investigate the motion of magnetic domain walls driven by magnetic fields and current-driven spin-orbit torques in an exchange-biased system with perpendicular magnetization. We consider Cr2O3/Co/Pt trilayers as model system, in which…

We develop and analyze an advanced concept for domain wall based sensing of rotations. Moving domain walls in n closed loops with n-1 intersecting convolutions by rotating fields, we can sense n rotations. By combining loops with coprime…

Recent experiments on the conductance of thin, narrow superconducting strips have found periodic fluctuations, as a function of the perpendicular magnetic field, with a period corresponding to approximately two flux quanta per strip area…

We present an analysis of edge domain walls in exchange-biased ferromagnetic films appearing as a result of a competition between the stray field at the film edges and the exchange bias field in the bulk. We introduce an effective…

The resistive switching phenomenon in MgO-based tunnel junctions is attributed to the effect of charged defects inside the barrier. The presence of electron traps in the MgO barrier, that can be filled and emptied, locally modifies the…

We present a theoretical study of the ballistic magnetoresistance in Ni contacts using first-principles, atomistic electronic-structure calculations. In particular we investigate the role of defects in the contact region in order to explain…

The scattering of the electron by a domain wall in a nano-wire is calculated perturbatively to the lowest order. The resistance is calculated by use of Landauer's formula. The result is shown to agree with the result of the linear response…

We are concerned with the global existence of finite energy weak solutions to 3D density-dependent magnetohydrodynamics (MHD) system with Hall-effect set in a general smooth bounded domain. The perfectly conducting wall boundary condition…

An experimental analysis for two parallel conducting layers determines the full resistivity tensor of the parallel layer, at magnetic fields where the other layer is in the quantum Hall regime. In heterostructures which exhibit parallel…

The electrical resistance of a diffusive ferromagnet with magnetic domain walls is studied theoretically, taking into account the spatial dependence of the magnetization. The semiclassical domain wall resistance is found to be either…

The electrical resistance of magnetic domain walls in ferromagnetic metallic manganites can be enhanced to 10-12 Ohm.m2 by patterning nanoconstrictions [J. Appl. Phys. 89, 6955 (2001)]. We show equally large enhancements in a phase…

A superconducting double spin valve device is proposed. Its operation takes advantage of the interplay between the spin-filtering effect of ferromagnetic insulators and superconductivity-induced out-of-equilibrium transport. Depending on…

We calculate the charge current in a metallic ferromagnet to first order in the time derivative of the magnetization direction. Irrespective of the microscopic details, the result can be expressed in terms of the conductivities of the…

The existing Levy-Zhang approach to constructing the contribution to the resistivity of a magnetic domain wall is explored. The model equations are integrated analytically, giving a closed form expression for the resistivity when the…

The capacitance of a double-heterojunction structure with a wide GaAs undoped layer embedded between two selectively doped AlGaAs barriers is calculated self-consistently as a function of intensity of the in-plane magnetic field. With…