相关论文: Universal Spin-Induced Magnetoresistance in the Va…
In the recent experiments the unusual oscillatory magnetoresistance in superconductors was discovered with a periodicity essentially independent on magnetic field direction and even material parameters. The nearly universal period points to…
For a two-dimensional (2D) hole system (confined within Ge layers of a multilayered p-Ge/Ge_{1-x}Si_x heterostructure) described by Luttinger Hamiltonian with the g-factor highly anisotropic for orientations of magnetic field perpendicular…
We investigate the magneto-conductance (MC) anisotropy in the variable range hopping regime, caused by quantum interference effects in three dimensions. When no spin-orbit scattering is included, there is an increase in the localization…
We report current-direction dependent or unidirectional magnetoresistance (UMR) in magnetic/nonmagnetic topological insulator (TI) heterostructures, Cr$_x$(Bi$_{1-y}$Sb$_y$)$_{2-x}$Te$_3$/(Bi$_{1-y}$Sb$_y$)$_2$Te$_3$, that is several orders…
The discovery of the unusual magnetoresistance (UMR) during the rotation of magnetization in the plane perpendicular to the electric current, which has been typically attributed to magnetization-dependent interfacial reflection of spin…
We derive kinetic equations describing injection and transport of spin polarized carriers in organic semiconductors with hopping conductivity via an impurity level. The model predicts a strongly voltage dependent magnetoresistance, defined…
Two-magnon Raman scattering intensity is obtained for two-dimensional spin-1/2 antiferromagnets in presence of hopping disorder. A consistent mode assignment scheme is prescribed which essentially establishes a correspondence between the…
We analize electrical conductivity controlled by hopping of bound spin polarons in disordered solids with wide distributions of electron energies and polaron shifts (barriers). By means of percolation theory and Monte Carlo simulations we…
Using a multi-conduction-channel model, we redefined the micromechanism of spin Hall magnetoresistance (SMR). Four conduction channels are created by spin accumulation of nonpolarized electron flow at top, bottom, left and right interfaces…
It is shown that in the presence of strong magnetic fields, spin-orbit scattering causes a sharp increase in the effective density of states in the variable-range hopping regime when temperature decreases. This effect leads to an…
We report an universal behaviour of hopping transport in strongly interacting mesoscopic two-dimensional electron systems (2DES). In a certain window of background disorder, the resistivity at low perpendicular magnetic fields follows the…
Transport properties of highly mobile 2D electrons are studied in symmetric GaAs quantum wells placed in titled magnetic fields. Quantum positive magnetoresistance (QPMR) is observed in magnetic fields perpendicular to the 2D layer.…
We study the effect of spin-orbit interaction on one-dimensional U(1)-invariant frustrated magnets with dominant critical nematic fluctuations. The spin-orbit coupling explicitly breaks the U(1) symmetry of arbitrary global spin rotations…
We propose a mechanism for negative isotropic magnetoresistance in the hopping regime. It results from a memory effect encrypted into spin correlations that are not taken into account by the conventional theory of hopping conductivity. The…
We consider the dynamics of a spin-1/2 particle constrained to move in an arbitrary space curve with an external electric and magnetic field applied. With the aid of gauge theory, we successfully decouple the tangential and normal dynamics…
The magnetoresistance associated with quantum interference corrections in a high mobility, gated InGaAs/InP quantum well structure is studied as a function of temperature, gate voltage, and angle of the tilted magnetic field. Particular…
We identify a magnetoelectric correction that completes the theoretical description of spin splitting (SS) in magnetic systems. Derived from the Dirac equation, this term couples local magnetic moments to the scalar electric potential,…
A large unidirectional magnetoresistance (UMR) ratio of UMR/$R_{xx}\sim$ $0.36\%$ is found in W/CoFeB metallic bilayer heterostructures at room temperature. Three different regimes in terms of the current dependence of UMR ratio are…
Specific d-wave angular dependence of the in-plane magnetoresistence in antiferromagnetic tetragonal YBa_{2}Cu_{3}O_{6+x} (x~0.3) on orientation of the external magnetic field in (a,b) plane is assigned to the effective hole transport…
The spin splitting caused by the terms linear in wavevector in the effective Hamiltonian containing can give rise to the new magneto-oscillation phenomena in two-dimensional systems. It is shown that the joint action of the spin-dependent…