相关论文: Universal Spin-Induced Magnetoresistance in the Va…

We predict the universal power law dependence of localization length on magnetic field in the strongly localized regime. This effect is due to the orbital quantum interference. Physically, this dependence shows up in an anomalously large…

We develop a theory of magnetoresistance based on variable-range hopping. An exponentially large, low-field and necessarily positive magnetoresistance effect is predicted in the presence of Hubbard interaction and spin-dynamics under…

We present a study of hopping conductivity for a system of sites which can be occupied by more than one electron. At a moderate on-site Coulomb repulsion, the coexistence of sites with occupation numbers 0, 1, and 2 results in an…

We review various aspects of magnetoresistance in (quasi-)twodimensional systems subject to an in-plane magnetic field. Concentrating on single-particle effects, three mechanisms leading to magnetoresistance are discussed: the orbital…

Despite the fact that the problem of interference mechanism of magnetoresistance in semiconductors with hopping conductivity was widely discussed, most of existing studies were focused on the model of spinless electrons. This model can be…

We measure the giant magnetoresistance (GMR) with the current both parallel and perpendicular to the direction of the magnetization in the ferromagnetic (FM) layers and thus probe the anisotropy of the effective mean free paths for the…

Large positive (P) magnetoresistance (MR) has been observed in parallel magnetic fields in a single 2D layer in a delta-doped GaAs/AlGaAs heterostructure with a variable-range-hopping (VRH) mechanism of conductivity. Effect of large PMR is…

Magnetoresistance (MR) of ion irradiated monolayer graphene samples with variable-range hopping (VRH) mechanism of conductivity was measured at temperatures down to $T = 1.8$ K in magnetic fields up to $B = 8$ T. It was observed that in…

Magnetoresistance in two-dimensional array of Ge/Si quantum dots was studied in a wide range of zero-magnetic field conductances, where the transport regime changes from hopping to diffusive one. The behavior of magnetoresistance is found…

We present a theory of organic magnetoresistance (OMR) based on the quenching of the quantum correlation between the carrier's spin and its local environment when the incoherent hopping takes place. We prove that this process contributes a…

Theory of weak localization in two-dimensional high-mobility semiconductor systems is developed with allowance for the spin-orbit interaction. The obtained expressions for anomalous magnetoresistance are valid in the whole range of…

We study an effect of moderate magnetic field on variable range hopping conductivity in arrays of ferromagnetic granules separated by tunnel barriers. It is shown that the resulting magnetoresistance can be significantly larger than the…

In hopping magnetoresistance of doped insulators, an applied magnetic field shrinks the electron (hole) s-wave function of a donor or an acceptor and this reduces the overlap between hopping sites resulting in the positive magnetoresistance…

We study the variable-range hopping (VRH) of bosons in an array of sites with short-range interactions and a large characteristic coordination number. The latter leads to strong quantum interference phenomena yet allows for their analytical…

We derive the kinetic equations for polaron hopping in organics that explicitly take into account the double occupation possibility and pair intersite correlations. The equations include simplified phenomenological spin dynamics and provide…

We use the coherent state approximation for the skyrmion in the isotropic quantum Heisenberg ferromagnet to obtain analytical expression for skyrmion hopping integral as a function of distance. It appears the skyrmion hopping is restricted…

We extend a microscopic theory of polarization and magnetization to include the spin degree of freedom of the electrons, introducing a general spin orbit coupling and Zeeman interaction term in the Hamiltonian. At finite frequencies and…

The electrical resistance of ferromagnetic/normal-metal (F/N) heterostructures depends on the nature of the junctions which may be tunnel barriers, point contacts, or intermetallic interfaces. For all junction types, the resistance of…

In solid state physics, giant magnetoresistance is the large change in electrical resistance due to an external magnetic field. Here we show that giant magnetoresistance is possible in a spin chain composed of weakly interacting layers of…

The universal oscillation of the tunnel magnetoresistance (TMR) ratio as a function of the insulating barrier thickness in crystalline magnetic tunnel junctions (MTJs) is a long-standing unsolved problem in condensed matter physics. To…