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相关论文: Submonolayer Epitaxy Without A Critical Nucleus

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We generalize the level set approach to model epitaxial growth to include thermal detachment of atoms from island edges. This means that islands do not always grow and island dissociation can occur. We make no assumptions about a critical…

材料科学 · 物理学 2009-11-07 M. Petersen , C. Ratsch , R. E. Caflisch , A. Zangwill

Monte Carlo simulations of an atomistic solid-on-solid model are used to study the effect of lattice misfit on the distribution of two-dimensional islands sizes as a function of coverage $\Theta$ in the submonolayer aggregation regime of…

凝聚态物理 · 物理学 2009-10-22 C. Ratsch , A. Zangwill , P. Šmilauer

We have performed Kinetic Monte Carlo simulation to study the effect of diffusion anisotropy and bonding anisotropy on island formation at different temperatures during the sub-monolayer film growth in Molecular Beam Epitaxy. We use simple…

材料科学 · 物理学 2019-12-11 Jagannath Devkota , Shankar P. Shrestha

We develop a theory for nucleation on top of islands in epitaxial growth based on the derivation of lifetimes and rates governing individual microscopic processes. These processes are strongly affected by the additional step edge barrier…

材料科学 · 物理学 2009-10-31 S. Heinrichs , J. Rottler , Ph. Maass

The effects of adsorbates on nucleation and growth of two-dimensional islands is investigated by kinetic Monte Carlo simulations and rate equation theory. The variation of island morphology with adsorbate parameters is discussed and the…

材料科学 · 物理学 2007-05-23 Miroslav Kotrla , Joachim Krug , Pavel Smilauer

We examine the island size distribution function and spatial correlation function of a model for island growth in the submonolayer regime in both 1 and 2 dimensions. In our model the islands do not grow in shape, and a fixed number of…

凝聚态物理 · 物理学 2009-10-28 Ji Li , A. G. Rojo , Leonard M. Sander

We simulated the growth of 2D islands with 2 kinds of diffusion atoms using the kinetic Monte- Carlo (kMC) method. As a result, we found that the slow atoms tend to create nuclei and determine the island volume distribution, along with…

原子与分子团簇 · 物理学 2015-03-17 R. Yamauchi , X. M. Lu , M. Koyama , H. Sasakura , Y. Nakata , S. Muto

Nucleation on top of two-dimensional islands with step edge barriers is investigated using scaling arguments. The nucleation rate is expressed in terms of three basic time scales: The time interval between deposition events, the residence…

材料科学 · 物理学 2009-10-31 Joachim Krug

We use Monte-Carlo simulations to study island formation in the growth of thin semiconducting films deposited on lattice-mismatched substrates. It is known that islands nucleate with critical nuclei of about one atom and grow two…

材料科学 · 物理学 2009-10-31 K. E. Khor , S. Das Sarma

A quantitative comparison between experimental and Monte Carlo simulation results for the epitaxial growth of Cu/Cu(001) in the submonolayer regime is presented. The simulations take into account a complete set of hopping processes whose…

凝聚态物理 · 物理学 2009-11-07 Itay Furman , Ofer Biham , Jiang-Kai Zuo , Anna K. Swan , John F. Wendelken

We consider the influence of realistic island diffusion rates to homoepitaxial growth on metallic surfaces using a recently developed rate equation model which describes growth in the submonolayer regime with hyperthermal deposition. To…

材料科学 · 物理学 2015-06-25 M. O. Jahma , M. Rusanen , A. Karim , I. T. Koponen , T. Ala-Nissila , T. S. Rahman

We develop a theory of nucleation on top of two-dimensional islands bordered by steps with an additional energy barrier $\Delta E_S$ for descending atoms. The theory is based on the concept of the residence time of an adatom on the…

材料科学 · 物理学 2007-05-23 Joachim Krug , Paolo Politi , Thomas Michely

We discuss effects of the different chemical bondings on the island morphology and on the island density scaling in two-component submonolayer growth. Different regimes depending on the strength of the mutual interactions and on the…

材料科学 · 物理学 2007-05-23 Miroslav Kotrla , Joachim Krug

We report simulations of submonolayer epitaxial growth using a continuum phase field model. The island density and the island size distribution both show scaling behavior. When the capillary length is small, the island size distribution is…

介观与纳米尺度物理 · 物理学 2013-05-29 Fan Ming , Andrew Zangwill

The morphological stability of two-dimensional islands nucleated on a substrate during vacuum or vapour-phase atom deposition is investigated. Using simple scaling arguments, it is shown that, contrary to expectation, dendritic islands may…

统计力学 · 物理学 2007-05-23 Alberto Pimpinelli

In this thesis we present a kinetic Monte Carlo model for the description of epitaxial graphene growth. Experimental results suggest a growth mechanism by which clusters of 5 carbon atoms are an intermediate species necessary for nucleation…

介观与纳米尺度物理 · 物理学 2012-04-03 B. Monserrat

We have performed Kinetic Monte Carlo simulation work to study the effect of diffusion anisotropy, bonding anisotropy and edge diffusion on island formation at different temperatures during the sub-monolayer film growth in Molecular Beam…

材料科学 · 物理学 2019-12-13 Jagannath Devkota , Shankar P. Shrestha

We use a multiscale approach to study a lattice-gas model of submonolayer growth of Fe/Mo(110) by Molecular Beam Epitaxy. To begin with, we construct a two-dimensional lattice-gas model of the Fe/Mo(110) system based on first-principles…

材料科学 · 物理学 2015-06-12 M. Mašín , M. Kotrla , B. Yang , M. Asta , M. O. Jahma , T. Ala-Nissila

We reexamine the density of two dimensional islands in the submonolayer regime of a homoepitaxially growing surface using the coarse grained Monte Carlo simulation with random sequential updating rather than parallel updating. It turns out…

统计力学 · 物理学 2015-06-25 H. Jeong , B. Kahng , D. E. Wolf

In the framework of the second-quantization representation of the master equation governing the irreversible epitaxial growth, exact equations describing the evolution of the island densities has been obtained. Their decoupling within a…

统计力学 · 物理学 2015-06-15 V. I. Tokar , H. Dreyssé
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