相关论文: Reflectionless Tunneling Through a Double-Barrier …
Despite several theoretical approaches describing multiple Andreev reflections (MAR) effect in superconductor-normal metal-superconductor (SNS) junction are elaborated, the problem of comprehensive and adequate description of MAR is highly…
Electrical properties of Josephson junctions Nb/FeSi/Nb with superconductor/ferromagnet (S/F)interfaces are presented. Due to Andreev reflection the nearly exact quadruple enhancement of the tunnel junction differential conductance compared…
On the basis of the Keldysh method of non-equilibrium systems, we develop a theory of electron tunneling in normal-metal/superconductor junctions. By using the tunneling Hamiltonian model (being appropriate for the tight-binding systems),…
The dynamical properties of hybrid normal metal/superconductor structures have recently come into research focus both experimentally and theoretically. Recent experimental studies of the coherent admittance $% Y(\omega )$ of SNS rings as…
The tunneling junction between one-dimensional topological superconductor and integer (fractional) topological insulator (TI), realized via point contact, is investigated theoretically with bosonization technology and renormalization group…
We measure the low-temperature resistance of permalloy break junctions as a function of contact size and the magnetic field angle, in applied fields large enough to saturate the magnetization. For both nanometer-scale metallic contacts and…
A non-stationary method for tunneling description of non-relativistic particles and photons through a barrier on the basis of consideration of the multiple internal reflections of vawe packets in relation of barrier boundaries is presented.…
The non linear charge transfer through a tunnel junction between two Luttinger systems is studied for repulsive, finite range interaction between electrons on the same, V_{11}, and on different,V_{12}, sides of the junction. Features of the…
We report the use of plasma-enhanced atomic layer deposition (PEALD) to fabricate single-electron transistors (SETs) featuring ultra-thin (~1 nm) tunnel-transparent SiO2 in Ni-SiO2-Ni tunnel junctions. We show that as a result of the O2…
The Letter presents the theory of planar ballistic SNS junctions at $T=0$ for any normal layer thickness $L$ taking into account phase gradients in superconducting leads. The current-phase relation was derived in the model of the steplike…
We demonstrate gate-tunable resonant tunneling and negative differential resistance in the interlayer current-voltage characteristics of rotationally aligned double bilayer graphene heterostructures separated by hexagonal boron-nitride…
We calculate the tunnelling resistance at the quantum critical point of a mesoscopic SQUIDs array in the presence of magnetic flux. We find the analytical relation between the magnetic flux induced dissipation strength and the Luttinger…
By taking into account the full four band energy spectrum, we calculate the transmission probability and conductance of electrons across symmetric and asymmetric double potential barrier with a confined interlayer potential difference in…
We study transport across either a potential or a magnetic barrier which is placed on the top surface of a three-dimensional thin topological insulator (TI). For such thin TIs, the top and bottom surfaces interact via a coupling $\lambda$…
Resonant tunneling between closely spaced two dimensional electron gases is a single particle phenomenon that has sparked interest for decades. High tunneling conductances at equal electron densities are observed whenever the Fermi levels…
The interplay between the electron transport in metal/ferroelectric/metal junctions with ultrathin ferroelectric barriers and the polarization state of a barrier is investigated. Using a model which takes into account screening of…
The tunnel magnetoresistance (TMR) of F/O/F magnetic junctions, (F's are ferromagnetic layers and O is an oxide spacer) in the presence of magnetic impurities within the barrier, is investigated. We assume that magnetic couplings exist both…
An isoperimetric upper bound on the resistance is given. As a corollary we resolve two problems, regarding mean commute time on finite graphs and resistance on percolation clusters. Further conjectures are presented.
Nb-based circuits have broad applications in quantum-limited photon detectors, low-noise parametric amplifiers, superconducting digital logic circuits, and low-loss circuits for quantum computing. The current state-of-the-art approach for…
A general expression is given for the change in free energy when a charge tunnels through a junction in a one-dimensional array of N metallic islands with arbitrary capacitances and arbitrary background charges. This is used to obtain…