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相关论文: Electronic phase transitions in the half-filled io…

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We employ the dynamical mean field approximation to study the effects of ionic potential ($\Delta$) on the square lattice Hubbard model. At half-filling when the staggered potential ($\Delta$) dominates the on-site Hubbard interaction…

强关联电子 · 物理学 2019-03-27 A. Shahbazy , M. Ebrahimkhas

We investigate the ground-state phase diagram of the one-dimensional "ionic" Hubbard model with an alternating periodic potential at half-filling by numerical diagonalization of finite systems with the Lanczos and density matrix…

强关联电子 · 物理学 2009-11-10 A. P. Kampf , M. Sekania , G. I. Japaridze , Ph. Brune

The ionic Hubbard model is investigated at half filling at zero temperature. We apply the cellular dynamical mean-field theory to the one-dimensional ionic Hubbard model to compute local quantities such as double occupancy and staggered…

强关联电子 · 物理学 2011-11-07 Ara Go , Gun Sang Jeon

We investigate the ground state phase diagram of the half-filled repulsive Hubbard model in two dimensions in the presence of a staggered potential $\Delta$, the so-called ionic Hubbard model, using cluster dynamical mean field theory. We…

强关联电子 · 物理学 2015-06-25 S. S. Kancharla , E. Dagotto

We investigate the phases of the ionic Hubbard model in a two-dimensional square lattice using determinant quantum Monte Carlo (DQMC). At half-filling, when the interaction strength or the staggered potential dominate we find Mott and band…

强关联电子 · 物理学 2009-11-13 K. Bouadim , N. Paris , F. Hebert , G. G. Batrouni , R. T. Scalettar

We study the Hubbard-Holstein model, which includes both the electron-electron and electron-phonon interactions characterized by $U$ and $g$, respectively, employing the dynamical mean-field theory combined with Wilson's numerical…

强关联电子 · 物理学 2009-11-10 Gun Sang Jeon , Tae-Ho Park , Jung Hoon Han , Hyun C. Lee , Han-Yong Choi

The ground state phase diagram of the half-filled repulsive Hubbard model in a bilayer is investigated using cluster dynamical mean field theory. For weak to intermediate values of Coulomb repulsion $U$, the system undergoes a transition…

强关联电子 · 物理学 2009-11-13 S. S. Kancharla , S. Okamoto

The interaction-driven insulator-to-metal transition has been reported in the ionic Hubbard model (IHM) for moderate interaction $U$, while its metallic phase only occupies a narrow region in the phase diagram. To explore the enlargement of…

强关联电子 · 物理学 2016-04-13 Mi Jiang , T. C. S. Schulthess

We investigate paramagnetic metal-insulator transitions in the infinite-dimensional ionic Hubbard model at finite temperatures. By means of the dynamical mean-field theory with an impurity solver of the continuous-time quantum Monte Carlo…

强关联电子 · 物理学 2014-05-20 Aaram J. Kim , M. Y. Choi , Gun Sang Jeon

To understand the essence of the exciton Mott transition in three-dimensional electron-hole systems, the metal-insulator transition is studied for a two-band Hubbard model in infinite dimensions with interactions of electron-electron…

强关联电子 · 物理学 2007-05-23 Yuh Tomio , Tetsuo Ogawa

The Mott metal-insulator transition in the two-band Hubbard model in infinite dimensions is studied by using the linearized dynamical mean-field theory recently developed by Bulla and Potthoff. The phase boundary of the metal-insulator…

强关联电子 · 物理学 2009-10-31 Y. Ono , R. Bulla , A. C. Hewson

In order to clarify the physics of the crossover from a Peierls band insulator to a correlated Mott-Hubbard insulator, we analyze ground-state and spectral properties of the one-dimensional half-filled Holstein-Hubbard model using…

强关联电子 · 物理学 2009-11-07 H. Fehske , A. P. Kampf , M. Sekania , G. Wellein

The Hubbard-Holstein model is one of the simplest to incorporate both electron-electron and electron-phonon interactions. In one dimension at half filling the Holstein electron-phonon coupling promotes onsite pairs of electrons and a…

强关联电子 · 物理学 2009-11-11 R. P. Hardikar , R. T. Clay

In the present paper metal-insulator transition is studied in a generalized Hubbard model with correlated hopping at half-filling and zero temperature. Single-particle Green function and energy spectrum of electron system are calculated.…

强关联电子 · 物理学 2015-06-25 Leonid Didukh , Vasyl Hankevych

Quantum systems under electric fields provide a powerful framework for uncovering and controlling novel quantum phases, especially in low-dimensional systems with strong correlations. In this work, we investigate quantum phase transitions…

强关联电子 · 物理学 2025-05-22 D. Arisa , R. M. Dos Santos , Isaac M. Carvalho , Vivian V. França

We investigate the ground state phase diagram of the half-filled $t-t^{\prime}$ repulsive Hubbard model in the presence of a staggered ionic potential $\Delta$, using the continuum-limit bosonization approach. We find, that with increasing…

强关联电子 · 物理学 2009-11-11 G. I. Japaridze , R. Hayn , P. Lombardo , E. Müller-Hartmann

The interaction between itinerant and Mott localized electronic states in strongly correlated materials is studied within dynamical mean field theory in combination with the numerical renormalization group method. A novel nonmagnetic zero…

强关联电子 · 物理学 2011-11-10 T. A. Costi , A. Liebsch

We investigate the neutral-to-ionic insulator-insulator transition in one-dimensional materials by treating a strong-coupling effective model based on the ionic Hubbard model using the density-matrix renormalization group and finite-size…

强关联电子 · 物理学 2015-05-13 L. Tincani , R. M. Noack , D. Baeriswyl

We describe a general method to study the ground state phase diagram of electronic models on chains whose extended Hubbard hamiltonian is formed by a generalized permutator plus a band-controlling term. The method, based on the appropriate…

强关联电子 · 物理学 2009-10-31 F. Dolcini , A. Montorsi

The ionic Hubbard model is a paradigmatic setup for studying the competition between band and Mott insulating behavior. Within the variationally exact in infinite dimensions Gutzwiller approximation, we derive a compact analytic expression…

强关联电子 · 物理学 2025-12-13 Marcin M. Wysokiński
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