相关论文: Core-Level Photoelectron Spectroscopy Probing Loca…
Atom specific valence electronic structures at interface are elucidated successfully using soft x-ray absorption and emission spectroscopy. In order to demonstrate the versatility of this method, we investigated SiO2/Si interface as a…
An accurate description of spatial variations in the energy levels of patterned semiconductor substrates on the micron and sub-micron scale as a function of local doping is an important technological challenge for the microelectronics…
X-ray Photoelectron Spectroscopy (XPS) is generally used for chemical analysis of surfaces and interfaces. This method involves the analysis of changes in binding energies and peak shapes of elements under consideration. It is also possible…
We experimentally observe photonic Landau levels that arise due to a strain-induced pseudomagnetic field in a silicon photonic crystal slab. The Landau levels are dispersive (i.e., they are not flat bands) due to the distortion of the unit…
Photoelectron ionization spectra of an autoionization system with one discrete level interacting with a neighbor two-level atom are discussed. The formula for long-time ionization spectra is derived. According to this formula, the spectra…
Electronic spectra of porous Si have been investigated in the region $<$4 eV below the Fermi level with specimens subjected to in situ oxygenation and thermal treatments. The significance of DOS to the photoluminescence and its degradation…
We report on the observation of the reststrahl band assisted photocurrents in epitaxial graphene on SiC excited by infrared radiation. The peculiar spectral dependence for frequencies lying within the reststrahl band of the SiC substrate…
Focused laser fields with textured polarization on a sub-wavelength scale allow extracting information on electronic processes which are not directly accessible by homogeneous fields. Here, we consider photoionization in radially and…
Strain engineering, which aims to tune the bandgap of a semiconductor by the application of strain, has emerged as an interesting way to control the electrical and optical properties of two-dimensional (2D) materials. Apart from the changes…
Synchrotron-radiation angle-resolved and core-level photoemission spectroscopy are used together to investigate the origin of the two-dimensional electron gas on the surface of single crystal CdO (100) films. A reduction in the…
Strain engineering is widely used in material science to tune the (opto-)electronic properties of materials and enhance the performance of devices. Two-dimensional atomic crystals are a versatile playground to study the influence of strain,…
We present a spectroscopic method which utilizes virtual photons to selectively measure the electronic structure of the top-most atomic layer. These virtual photons are created when incident positrons transition from vacuum states to bound…
In integrated photonics, specific wavelengths are preferred such as 1550 nm due to low-loss transmission and the availability of optical gain in this spectral region. For chip-based photodetectors, layered two-dimensional (2D) materials…
We have developed a scanning photoluminescence technique that can directly map out the local two-dimensional electron density with a relative accuracy of $\sim2.2\times10^8$ cm$^{-2}$. The validity of this approach is confirmed by the…
X-ray photoelectron diffraction is a powerful tool for determining the structure of clean and adsorbate-covered surfaces. Extending the technique into the ultrafast time domain will open the door to studies as diverse as the direct…
The control over light propagation and localization in photonic crystals offers wide applications from sensing and on-chip routing to lasing and quantum light-matter interfaces. While in electronic crystals magnetic fields can be used to…
The development of efficient low-loss electro-optic and nonlinear components based on silicon or its related compounds, such as nitrides and oxides, is expected to dramatically enhance silicon photonics by eliminating the need for…
Strain engineering offers unique control to manipulate the electronic band structure of two-dimensional materials (2DMs) resulting in an effective and continuous tuning of the physical properties. Ad-hoc straining 2D materials has…
This work presents how first-principles simulations validated through experimental measurements lead to a new accurate prediction of the expected Raman shift as a function of strain in silicon. Structural relaxation of a strained primitive…
The concept of using photoelectron interferometry in short laser fields to probe electron dynamics and target structures was introduced more than two decades ago. However, the quality of experimental data has remained insufficient for…