相关论文: Surface Spin-valve Effect

Hysteretic magneto-resistance of point contacts formed between non-magnetic tips and single ferromagnetic films exchange-pinned by antiferromagnetic films is investigated. The analysis of the measured current driven and field driven…

Nonlinear current-voltage characteristics and magnetoresistance of point contacts between a normal metal (N) and films of amorphous ferromagnet (F) Co40Fe40B20 of different thickness, exchange-biased by antiferromagnetic Mn80Ir20 are…

We experimentally investigate magnetoresistance of a single GeTe-Ni junction between the $\alpha$-GeTe topological semimetal and thick nickel film at room and liquid helium temperatures. For the magnetic field parallel to the junction…

We measure the spin-charge interconversion by the spin Hall effect in ferromagnetic/Pt nanodevices. The extracted effective spin Hall angles (SHAs) of Pt evolve drastically with the ferromagnetic (FM) materials (CoFe, Co, and NiFe), when…

We show that the peculiarities of the electron band structure strongly affect the spin-valve effect in heterostructures consisting of a superconductor (S) and two ferromagnetic layers F1 and F2. For the S/F1/F2 systems the energy shift…

Using a three-dimensional focused-ion beam lithography process we have fabricated nanopillar devices which show spin transfer torque switching at zero external magnetic fields. Under a small in-plane external bias field, a field-dependent…

Spin relaxation in graphene is investigated in electrical graphene spin valve devices in the non-local geometry. Ferromagnetic electrodes with in-plane magnetizations inject spins parallel to the graphene layer. They are subject to Hanle…

We present new mechanism for manipulation of the spin-wave amplitude through the use of the dynamic charge-mediated magnetoelectric effect in ultrathin multilayers composed of dielectric thin-film capacitors separated by a ferromagnetic…

We have measured spin transfer-induced dynamics in magnetic nanocontact devices having a perpendicularly magnetized Co/Ni free layer and an in-plane magnetized CoFe fixed layer. The frequencies and powers of the excitations agree well with…

We investigate ultrafast demagnetization due to electron-phonon interaction in a model band-ferromagnet. We show that the microscopic mechanism behind the spin dynamics due to electron-phonon interaction is the interplay of scattering and…

Graphene has remarkable opportunities for spintronics due to its high mobility and long spin diffusion length, especially when encapsulated in hexagonal boron nitride (h-BN). Here, for the first time, we demonstrate gate-tunable spin…

We present a study of the influence of an external magnetic field H and an electric current I on the spin-valve (SV) effect between a ferromagnetic thin film (F) and a sharp tip of a nonmagnetic metal (N). To explain our observations, we…

In the emerging field of magnonics, spin waves are foreseen as signal carriers for future spintronic information processing and communication devices, owing to both the very low power losses and a high device miniaturisation potential…

On the spin-valve-like ferromagnet/spin glass/ferromagnet (FM/SG/FM) structure, the tunneling current is dominated by resistance switch (RS) instead of the local density of states according to the conventional tunneling theory. Here we show…

New mechanism of magnetoresistance, based on tunneling-emission of spin polarized electrons from ferromagnets (FM) into semiconductors (S) and precession of electron spin in the semiconductor layer under external magnetic field, is…

We report the observation of the spin valve effect in (Ga,Mn)As/p-GaAs/(Ga,Mn)As trilayer devices. Magnetoresistance measurements carried out in the current in plane geometry reveal positive magnetoresistance peaks when the two…

We consider spin effects related to the random spin-orbit interaction in graphene. Such a random interaction can result from the presence of ripples and/or other inhomogeneities at the graphene surface. We show that the random spin-orbit…

Spin waves are promising chargeless information carriers for the future, energetically efficient beyond-CMOS systems. Among many advantages there are the ease of achieving nonlinearity, the variety of possible interactions, and excitation…

Monolayer graphene with an energy gap presents a pseudospin symmetry broken ferromagnet with a perpendicular pseudomagnetization whose direction is switched by altering the type of doping between n and p. We demonstrate an electrical…

A nonlinear model of spin-wave excitation involving a point contact in a thin ferromagnetic film that includes the Oersted magnetic field contribution is presented. We consider the case of an external dc field applied perpendicular to the…