相关论文: Electrical Detection of Spin Transport in Lateral …

The electrical injection of spin polarized electrons in a semiconductor can be achieved in principle by driving a current from a ferromagnetic metal, where current is known to be significantly spin polarized, into the semiconductor via…

The realization of a viable semiconductor transistor and information processing devices based on the electron spin has fueled intense basic research of three key elements: injection, detection, and manipulation of spins in the semiconductor…

A distinguishing feature of spin accumulation in ferromagnet-semiconductor devices is precession of the non-equilibrium spin population of the semiconductor in a magnetic field. This is the basis for detection techniques such as the Hanle…

We present a theoretical model that describes electrical spin-detection at a ferromagnet/semiconductor interface. We show that the sensitivity of the spin detector has strong bias dependence which, in the general case, is dramatically…

The current generation of spintronic devices, which use electron-spin relies on linear operations for spin-injection, transport and detection processes. The existence of nonlinearity in a spintronic device is indispensable for spin-based…

We discuss methods for imaging the nonequilibrium spin polarization of electrons in Fe/GaAs spin transport devices. Both optically- and electrically-injected spin distributions are studied by scanning magneto-optical Kerr rotation…

Electrical injection and detection of spin-polarized electrons is demonstrated for the first time in a single wafer, all-semiconductor, GaAs-based lateral spintronic device, employing p+-(Ga,Mn)As/n+-GaAs ferromagnetic Esaki diodes as spin…

Efficient detection of spin-charge conversion is crucial for advancing our understanding of emergent phenomena in spin-orbit-coupled nanostructures. Here, we provide proof of principle of an electrical detection scheme of spin-charge…

We study the electrical detection of spin accumulation at a ferromagnet-silicon interface, which can be verified by measuring a Hanle effect in three-terminal lateral devices. The device structures used consist of a semiconducting Si…

We propose a possible experimental setup for nonreciprocal electron transport in a lateral spin valve due to noncoplanar distribution of magnetic moment (and field) in the system. Some metals (Al, Cu) and semiconductors (GaAs, InSb etc.)…

We show that the accumulation of spin-polarized electrons at a forward-biased Schottky tunnel barrier between Fe and n-GaAs can be detected electrically. The spin accumulation leads to an additional voltage drop across the barrier that is…

Evidence of spin precession and dephasing ("Hanle effect") induced by an external magnetic field is the only unequivocal proof of spin-polarized conduction electron transport in semiconductor devices. However, when spin dephasing is very…

The generation, manipulation and detection of spin-polarized electrons in nanostructures define the main challenges of spin-based electronics[1]. Amongst the different approaches for spin generation and manipulation, spin-orbit coupling,…

Ballistic hot electron transport overcomes the well-known problems of conductivity and spin lifetime mismatch that plagues spin injection in semiconductors with ferromagnetic ohmic contacts. Through the spin-dependent mean-free-path, it…

The specific band structure of graphene, with its unique valley structure and Dirac neutrality point separating hole states from electron states has led to the observation of new electronic transport phenomena such as anomalously quantized…

Efforts to achieve efficient injection of spin-polarized electrons into a semiconductor, a key prerequisite for developing electronics that exploit the electron's spin degree of freedom, have so far met with limited success. Here we report…

We investigate the correlation between spin signals measured in three-terminal (3T) geometry by the Hanle effect and the spin accumulation generated in a semiconductor channel in a lateral (Ga,Mn)As/GaAs Esaki diode device. We…

The magnitude of spin accumulation created in semiconductors by electrical injection of spin-polarized electrons from a ferromagnetic tunnel contact is investigated, focusing on how the spin signal detected in a Hanle measurement varies…

Spin precession and dephasing ("Hanle effect") provides an unambiguous means to establish the presence of spin transport in semiconductors. We compare theoretical modeling with experimental data from drift-dominated silicon spin-transport…

We report on an all-electrical measurement of the spin Hall effect in epitaxial Fe/In_{x}Ga_{1-x}As heterostructures with n-type channel doping (Si) and highly doped Schottky tunnel barriers. A transverse spin current generated by an…