相关论文: InGaAs/GaAs/alkanethiolate radial superlattices: E…
The structure and the magnetic properties of an InGaAs/Fe3Si superlattice in a cylindrical geometry are investigated by electron microscopy techniques, x-ray diffraction and magnetometry. To form a radial superlattice, a pseudomorphic…
We present a new double-layer design for 2D surface superlattice systems in GaAs-AlGaAs heterostructures. Unlike previous studies, our device (1) uses an in-situ gate, which allows very short period superlattice in high mobility, shallow…
We calculate the band structure of a two-dimensional GaAs/AlGaAs superlattice and estimate the ultimate efficiency of solar cells using this type of structure for solar energy conversion. The superlattice under consideration consists of…
The number of atomic layers confined in a two-dimensional structure is crucial for the electronic and magnetic properties. Single-layer and bilayer $J_{\rm eff} = 1/2$ square lattices are well-known examples where the presence of the extra…
We study the influence of residual strain in InGaAs/InAlAs superlattice (SL) on the ultrafast photocarrier dynamics under femtosecond laser excitation. We propose and fabricate a novel-designed strained InGaAs/InAlAs SL which allows us to…
We explore an alternative way to fabricate (In,Ga)N/GaN short-period superlattices on GaN(0001) by plasma-assisted molecular beam epitaxy. We exploit the existence of an In adsorbate structure manifesting itself by a…
The electronic transport properties of graphene-based superlattice structures are investigated. A graphene-based modulation-doped superlattice structure geometry is proposed and consist of periodically arranged alternate layers:…
Antimonide type II superlattices is expected to overtake HgCdTe as the preferred materials for infrared detection due to their excellent photoelectric properties and flexible and adjustable band structures. Among these compounds, InAs/GaSb…
We propose that constructing a molecule super-lattice on a superconducting ultrathin film is a promising way to manipulate superconductivity in experiment. We theoretically study superconductivity in a molecule graphene system, which is…
The annealing-induced formation of (Mn,Ga)As nanocrystals in (Ga,Mn)As/GaAs superlattices was studied by X-ray diffraction, transmission electron microscopy and magnetometry. The superlattice structures with 50 A thick (Ga,Mn)As layers…
A poly(styrene-block-methylmethacrylate) diblock copolymer in the hexagonal cylindrical phase has been used as a mask for preparing a periodic gate on top of a Ga[Al]As-heterostructure. A superlattice period of 43 nm could be imposed onto…
The system of coupled discrete equations describing a two-component superlattice with interlaced linear and nonlinear constituents is revisited as a basis for investigating binary waveguide arrays, such as ribbed AlGaAs structures, among…
Radial superlattices are nanostructured materials obtained by rolling-up thin solid films into spiral-like tubular structures. The formation of these "high-order" superlattices from two-dimensional crystals or ultrathin films is expected to…
Atomically-thin layers of two-dimensional materials can be assembled in vertical stacks held together by relatively weak van der Waals forces, allowing for coupling between monolayer crystals with incommensurate lattices and arbitrary…
The literature on void superlattice formation observed under irradation of metals and insulators is analyzed with a special attention to the self-organization; a general scenario of this process is discussed. A simple relation for the…
Overlaying commensurate optical lattices with various configurations called superlattices can lead to exotic lattice topologies and, in turn, a discovery of novel physics. In this study, by overlapping the maxima of lattices, a new isolated…
The ability to assemble mesoscopic colloidal lattices above a surface is important for fundamental studies related with nucleation and crystallization, but also for a variety of technological applications in photonics and micro-engineering.…
We describe a technique to fabricate closely spaced electron-hole bilayers in GaAs-AlGaAs heterostructures. Our technique incorporates a novel method for making shallow contacts to a low density ($<10^{11}cm^{-2}$) 2-dimensional electron…
We report on fabrication of single-electron transistors using InAs nanowires with epitaxial aluminium with fixed tunnel barriers made of aluminium oxide. The devices exhibit a hard superconducting gap induced by the proximized aluminium…
In this work, we report a polarized Raman study on the vibrational properties of the InAs/InAs1-xSbx SLs as well as selected InAs1-xSbx alloys, all grown on GaSb substrates by either MBE or MOCVD, from both growth surface and cleaved edge.