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相关论文: The Orbital Selective Mott Transition in a Three B…

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We examine whether the Mott transition of a half-filled, two-orbital Hubbard model with unequal bandwidths occurs simultaneously for both bands or whether it is a two-stage process in which the orbital with narrower bandwith localizes first…

强关联电子 · 物理学 2007-05-23 L. de' Medici , A. Georges , S. Biermann

By applying dynamical mean-field theory in combination with exact diagonalization at zero temperature to a half-filled Hubbard model with two orbitals having distinct noninteracting densities of states, we show that an orbital selective…

强关联电子 · 物理学 2016-03-17 Ze-Yi Song , Hunpyo Lee , Yu-Zhong Zhang

We apply the slave-boson approach of Kotliar and Ruckenstein to the two-band Hubbard model with an Ising like Hund's rule coupling and bands of different widths. On the mean-field level of this approach we investigate the Mott transition…

强关联电子 · 物理学 2009-11-25 A. Rüegg , M. Indergand , S. Pilgram , M. Sigrist

The anisotropic two-orbital Hubbard model is investigated at low temperatures using high-precision quantum Monte Carlo (QMC) simulations within dynamical mean-field theory (DMFT). We demonstrate that two distinct orbital-selective Mott…

强关联电子 · 物理学 2015-06-25 N. Blümer , C. Knecht , K. Pozgajcic , P. G. J. van Dongen

The nondegenerate two-orbital Hubbard model is studied within the dynamic mean-field theory to reveal the influence of two important factors, i.e. crystal field splitting and interorbital hopping, on orbital selective Mott transition (OSMT)…

强关联电子 · 物理学 2009-11-06 Yun Song , Liang-Jian Zou

Using high-precision quantum Monte Carlo (QMC) simulations within the framework of dynamical mean field theory (DMFT), we show that the anisotropic degenerate two-orbital Hubbard model contains two consecutive orbital-selective Mott…

强关联电子 · 物理学 2007-05-23 P. G. J. van Dongen , C. Knecht , N. Blümer

We analyze the two-orbital Hubbard model by means of the Composite Operator Method with the aim at studying the phenomenon of orbital selective Mott transition (OSMT). The model contains an interorbital interaction $U'$, in addition to the…

强关联电子 · 物理学 2015-05-13 Adolfo Avella , Ferdinando Mancini , Satoru Odashima , Giovanni Scelza

We extend previous studies on orbital-selective Mott transitions in the paramagnetic state of the half-filled degenerate two-band Hubbard model to the general doped case, using a high-precision quantum Monte Carlo dynamical mean-field…

强关联电子 · 物理学 2009-09-22 Eberhard Jakobi , Nils Blümer , Peter van Dongen

We investigate the Mott transitions in two-band Hubbard models with different bandwidths. Applying dynamical mean field theory, we discuss the stability of itinerant quasi-particle states in each band. We demonstrate that separate Mott…

强关联电子 · 物理学 2009-11-10 Akihisa Koga , Norio Kawakami , T. M. Rice , Manfred Sigrist

We investigate the Mott transitions in two-orbital Hubbard systems. Applying the dynamical mean field theory and the self-energy functional approach, we discuss the stability of itinerant quasi-particle states in each band. It is shown that…

强关联电子 · 物理学 2009-11-11 A. Koga , K. Inaba , N. Kawakami

The orbital degrees of freedom are of vital importance in explanation of various phenomena. Among them is the orbital-selective Mott transition (OSMT), which is thought to occur in several materials as Ca$_{2-x}$Sr$_x$RuO$_4$ and…

强关联电子 · 物理学 2015-11-24 E Plekhanov , A Avella , F Mancini , F P Mancini

The anisotropic degenerate two-orbital Hubbard model is studied within dynamical mean-field theory at low temperatures. High-precision calculations on the basis of a refined quantum Monte Carlo (QMC) method reveal that two distinct…

强关联电子 · 物理学 2007-05-23 C. Knecht , N. Blümer , P. G. J. van Dongen

The orbital-selective electronic behavior is one of the most remarkable manifestations of strong electronic correlations in multi-orbital systems. A prominent example is the orbital-selective Mott transition (OSMT), which is characterized…

强关联电子 · 物理学 2022-08-30 Evgeny A. Stepanov

We investigate the Mott transition in infinite dimensions in the orbitally degenerate Hubbard model. We find that the qualitative features of the Mott transition found in the one band model are also present in the orbitally degenerate case.…

凝聚态物理 · 物理学 2015-06-25 Henrik Kajueter , Gabriel Kotliar

We reformulate the time-dependent Gutzwiller approximation by M. Schir\'o and M. Fabrizio [Phys. Rev. Lett. 105, 076401 (2010)] in the framework of slave-boson mean-field theory, which is used to investigate the dynamical Mott transition of…

强关联电子 · 物理学 2013-07-17 Malte Behrmann , Michele Fabrizio , Frank Lechermann

We investigate the effects of crystal field splitting in a doped two-band Hubbard model with different bandwidths within dynamical mean-field theory (DMFT), using a quantum Monte Carlo impurity solver. In addition to an orbital-selective…

强关联电子 · 物理学 2013-05-30 E. Jakobi , N. Blümer , P. G. J. van Dongen

We examine finite-temperature phase transitions in the two-orbital Hubbard model with different bandwidths by means of the dynamical mean-field theory combined with the continuous-time quantum Monte Carlo method. It is found that there…

强关联电子 · 物理学 2015-10-28 Aaram J. Kim , MooYoung Choi , Gun Sang Jeon

Mott transitions in the two-orbital Hubbard model with different bandwidths are investigated at finite temperatures. By means of the self-energy functional approach, we discuss the stability of the intermediate phase with one orbital…

强关联电子 · 物理学 2009-11-11 Kensuke Inaba , Akihisa Koga , Sei-ichiro Suga , Norio Kawakami

The dynamical mean-field theory is employed to study the orbital-selective Mott transition (OSMT) of the two-orbital Hubbard model with nearest neighbor hopping and next-nearest neighbor (NNN) hopping. The NNN hopping breaks the…

强关联电子 · 物理学 2019-09-04 Yuekun Niu , Jian Sun , Yu Ni , Yun Song

We have studied the doping-driven orbital-selective Mott transition in multi-band Hubbard models with equal band width in the presence of crystal field splitting. Crystal field splitting lifts one of the bands while leaving the others…

强关联电子 · 物理学 2016-01-12 Yilin Wang , Li Huang , Liang Du , Xi Dai
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