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相关论文: Electric Field Effect Analysis of Thin PbTe films …

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We measured the response of the surface state spectrum of epitaxial Sb2Te3 thin films to applied gate electric fields by low temperature scanning tunneling microscopy. The gate dependent shift of the Fermi level and the screening effect…

介观与纳米尺度物理 · 物理学 2014-05-07 Tong Zhang , Jeonghoon Ha , Niv Levy , Young Kuk , Joseph Stroscio

Tensile strained bulk HgTe is a three-dimensional topological insulator. Because of the energetic position of its surface state Dirac points relative to its small bulk gap, the electronic properties of the relatively thin MBE-grown films…

介观与纳米尺度物理 · 物理学 2018-04-06 Jihang Zhu , Chao Lei , Allan H. MacDonald

We consider in our work high quality single crystal thin films of Bi2Se3, grown by molecular beam epitaxy, both with and without Pb doping. Our ARPES data demonstrate topological surface states with a Fermi level lying inside the bulk band…

介观与纳米尺度物理 · 物理学 2012-01-20 Jian Wang , Ashley M. DaSilva , Cui-Zu Chang , Ke He , J. K. Jain , Nitin Samarth , Xu-Cun Ma , Qi-Kun Xue , Moses H. W. Chan

The electronic structure of thin films of FeTe grown on Bi$_2$Te$_3$ is investigated using angle-resolved photoemission spectroscopy, scanning tunneling microscopy and first principles calculations. As a comparison, data from cleaved bulk…

The study of subtle effects on transport in semiconductors requires high-quality epitaxial structures with low defect density. Using hybrid molecular beam epitaxy (MBE), SrTiO$_3$ films with low-temperature mobility exceeding 42,000…

Interface effects on the ferroelectric behavior of PbTiO$_3$ ultrathin films deposited on SrTiO$_3$ substrate are investigated using an interatomic potential approach with parameters fitted to first-principles calculations. We find that the…

材料科学 · 物理学 2009-11-11 M Sepliarsky , M. G. Stachiotti , R. L. Migoni

Ab initio electronic structure calculations based on density functional theory and tight-binding methods for the thermoelectric properties of p-type Sb$_2$Te$_3$ films are presented. The thickness-dependent electrical conductivity and the…

An applied electric field can reversibly change the temperature of an electrocaloric material under adiabatic conditions, and the effect is strongest near phase transitions. This phenomenon has been largely ignored because only small…

材料科学 · 物理学 2009-11-11 A. Mischenko , Q. Zhang , J. F. Scott , R. W. Whatmore , N. D. Mathur

Micrometric domains of precise ferroelectric polarization have been written into a 20 nm thick epitaxial thin film of BaTiO3(001) (BTO) on a Nb doped SrTiO3 (STO) substrate using PiezoForce Microscopy (PFM). The domain dependent electronic…

材料科学 · 物理学 2018-06-06 N. Barrett , J. Rault , I. Krug , B. Vilquin , G. Niu , B. Gautier , D. Albertini , O. Renault

We theoretically study, through combining the density functional theory and an unfolding technique, the electronic band structure and the charge doping effects for the deposition of potassium (K) on multilayer FeSe films grown on SrTiO3…

介观与纳米尺度物理 · 物理学 2016-02-24 Fawei Zheng , Li-Li Wang , Qi-Kun Xue , Ping Zhang

The electron band structure of graphene on SrTiO3 substrate has been investigated as a function of temperature. The high-resolution angle-resolved photoemission study reveals that the spectral width at Fermi energy and the Fermi velocity of…

High-quality Sb2Te3 films are obtained by molecular beam epitaxy on graphene substrate and investigated by in situ scanning tunneling microscopy/spectroscopy. Intrinsic defects responsible for the natural p-type conductivity of Sb2Te3 are…

材料科学 · 物理学 2012-02-14 Yeping Jiang , Y. Y. Sun , Mu Chen , Yilin Wang , Zhi Li , Canli Song , Ke He , Lili Wang , Xi Chen , Qi-Kun Xue , Xucun Ma , S. B. Zhang

We report on the observation of metallic behavior in thin films of oxygen-deficient SrTiO$_3$ - down to 9 unit cells - when coherently strained on (001) SrTiO$_3$ or DyScO$_3$-buffered (001) SrTiO$_3$ substrates. These films have carrier…

材料科学 · 物理学 2016-06-06 Purnima P. Balakrishnan , Urusa S. Alaan , Matthew T. Gray , Yuri Suzuki

The ground-state polarization of PbTiO3 thin films is studied using a microscopic effective Hamiltonian with parameters obtained from first-principles calculations. Under short-circuit electrical boundary conditions, (001) films with…

材料科学 · 物理学 2009-10-31 Ph. Ghosez , K. M. Rabe

Electrical field control of the carrier density of topological insulators (TI) has greatly expanded the possible practical use of these materials. However, the combination of low temperature local probe studies and a gate tunable TI device…

介观与纳米尺度物理 · 物理学 2013-04-15 Tong Zhang , Niv Levy , Jeonghoon Ha , Young Kuk , Joseph A. Stroscio

The magnetoconductive properties of ultrathin Pb films deposited on Si(111) are measured and compared with density-functional electronic band-structure calculations on two-dimensional, free-standing, 1 to 8 monolayers thick Pb(111) slabs. A…

材料科学 · 物理学 2009-11-07 I. Vilfan , M. Henzler , O. Pfennigstorf , H. Pfnuer

Among the recently discovered iron-based superconductors, ultrathin films of FeSe grown on SrTiO3 substrates have uniquely evolved into a high superconducting-transition-temperature (TC) material. The mechanisms for the high-TC…

超导电性 · 物理学 2015-12-10 J. Shiogai , Y. Ito , T. Mitsuhashi , T. Nojima , A. Tsukazaki

We report a strong thickness dependence of the complex frequency-dependent optical dielectric function in epitaxial CaMnO3(001) thin films on SrTiO3(001), LaAlO3(001), and SrLaAlO4(001) substrates. A doubling of the peak value of the…

Thermoelectric (TE) devices have been attracting increasing attention because of their ability to convert heat directly to electricity. To date, improving the TE figure of merit remains the key challenge. The advent of the topological…

介观与纳米尺度物理 · 物理学 2016-08-02 T. H. Wang , H. T. Jeng

We propose a setup enabling electron energy loss spectroscopy to determine the density of the electrons accumulated by an electro-positive dielectric in contact with a plasma. It is based on a two-layer structure inserted into a recess of…

应用物理 · 物理学 2020-01-08 E. Thiessen , F. X. Bronold , H. Fehske
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