相关论文: Single electron spin and its coherence in Si quant…

Spin qubits defined in carbon nanotube quantum dots are of considerable interest for encoding and manipulating quantum information because of the long electron spin coherence times expected. However, before carbon nanotubes can find…

We propose a novel optical and electrical hybrid scheme for the measurement of nuclear spin qubits in silicon. By combining the environmental insensitivity of the integer quantum Hall effect with the optically distinguishable hyperfine…

Through the introduction of a new electron spin transport mechanism, a 2D donor electron spin quantum computer architecture is proposed. This design addresses major technical issues in the original Kane design, including spatial…

Without resorting to spin-spin coupling, we propose a scalable spin quantum computing scheme assisted with a semiconductor multiple-quantum-dot structure. The techniques of single electron transitions and the nanostructure of quantum-dot…

Control of hyperfine interactions is a fundamental requirement for quantum computing architecture schemes based on shallow donors in silicon. However, at present, there is lacking an atomistic approach including critical effects of…

We fabricated Quantum Dot (QD) devices using a standard SOI CMOS process flow, and demonstrated that the spin of confined electrons could be controlled via a local electrical-field excitation, owing to inter-valley spin-orbit coupling. We…

Quasi-static transport measurements are employed on a laterally defined tunnel-coupled double quantum dot. A nearby quantum point contact allows us to track the charge as added to the device. If charged with only up to one electron, the…

The states of a boron acceptor near a Si/SiO2 interface, which bind two low-energy Kramers pairs, have exceptional properties for encoding quantum information and, with the aid of strain, both heavy hole and light hole-based spin qubits can…

In Si quantum dots, valley degree of freedom, in particular the generally small valley splitting and the dot-dependent valley-orbit phase, adds complexities to the low-energy electron dynamics and the associated spin qubit manipulation.…

Due to the spin-orbital coupling in a semiconductor quantum dot, a freely precessing electron spin produces a time-dependent charge density. This creates a sizeable electric field outside the dot, leading to promising applications in…

Electron spins and photons are complementary quantum-mechanical objects that can be used to carry, manipulate and transform quantum information. To combine these resources, it is desirable to achieve the coherent coupling of a single spin…

Using real-time charge sensing and gate pulsing techniques we measure the ratio of the rates for tunneling into the excited and ground spin states of a single-electron AlGaAs/GaAs quantum dot in a parallel magnetic field. We find that the…

We describe a paradigm for measuring a single electron spin in a solid. This is a fundamental problem in condensed matter physics. The technique can be used to read a spin qubit relatively non-invasively in either a spintronic quantum gate…

Semiconductor spin qubits based on spin-orbit states are responsive to electric field excitation allowing for practical, fast and potentially scalable qubit control. Spin-electric susceptibility, however, renders these qubits generally…

A possibility to perform single-electron computing without dissipation in the array of tunnel-coupled quantum dots is studied theoretically, taking the spin gate NOT (inverter) as an example. It is shown that the logical operation can be…

Single-electron circuits of the future, consisting of a network of quantum dots, will require a mechanism to transport electrons from one functional part to another. For example, in a quantum computer[1] decoherence and circuit complexity…

We show theoretically that arbitrary coherent rotations can be performed quickly (with a gating time ~1 ns) and with high fidelity on the spin of a single confined electron using control of exchange only, without the need for spin-orbit…

The advanced nanoscale integration available in silicon complementary metal-oxide-semiconductor (CMOS) technology provides a key motivation for its use in spin-based quantum computing applications. Initial demonstrations of quantum dot…

We measure the interdot charge relaxation time T_1 of a single electron trapped in an accumulation mode Si/SiGe double quantum dot. The energy level structure of the charge qubit is determined using photon assisted tunneling, which reveals…

A crucial requirement for quantum information processing is the realization of multiple-qubit quantum gates. Here, we demonstrate an electron spin based all-electrical two-qubit gate consisting of single spin rotations and inter-dot spin…