Semiconductor spin qubits based on spin-orbit states are responsive to electric field excitation allowing for practical, fast and potentially scalable qubit control. Spin-electric susceptibility, however, renders these qubits generally vulnerable to electrical noise, which limits their coherence time. Here we report on a spin-orbit qubit consisting of a single hole electrostatically confined in a natural silicon metal-oxide-semiconductor device. By varying the magnetic field orientation, we reveal the existence of operation sweet spots where the impact of charge noise is minimized while preserving an efficient electric-dipole spin control. We correspondingly observe an extension of the Hahn-echo coherence time up to 88 μs, exceeding by an order of magnitude the best reported values for hole-spin qubits, and approaching the state-of-the-art for electron spin qubits with synthetic spin-orbit coupling in isotopically-purified silicon. This finding largely enhances the prospects of silicon-based hole spin qubits for scalable quantum information processing.
@article{arxiv.2201.08637,
title = {A single hole spin with enhanced coherence in natural silicon},
author = {N. Piot and B. Brun and V. Schmitt and S. Zihlmann and V. P. Michal and A. Apra and J. C. Abadillo-Uriel and X. Jehl and B. Bertrand and H. Niebojewski and L. Hutin and M. Vinet and M. Urdampilleta and T. Meunier and Y. -M. Niquet and R. Maurand and S. De Franceschi},
journal= {arXiv preprint arXiv:2201.08637},
year = {2022}
}