The remarkable prospect for quantum-dot-coupled tin qubits in silicon
Abstract
Spin- Sn nuclei in a silicon semiconductor could make excellent qubits. Nuclear spins in silicon are known to have long coherence times. Tin is isoelectronic with silicon, so we expect electrons can easily shuttle from one Sn atom to another to propagate quantum information via a hyperfine interaction that we predict, from all-electron linearized augmented plane wave density functional theory calculations, to be roughly ten times larger than intrinsic Si. A hyperfine-induced electro-nuclear controlled-phase (e-n-CPhase) gate operation, generated (up to local rotations) by merely holding an electron at a sweet-spot of maximum hyperfine strength for a specific duration of time, is predicted to be exceptionally resilient to charge/voltage noise. Diabatic spin flips are suppressed with a modest magnetic field (mT for flip probabilities) and nuclear spin bath noise may be avoided via isotopic enrichment or mitigated using dynamical decoupling or through monitoring and compensation. Combined with magnetic resonance control, this operation enables universal quantum computation.
Cite
@article{arxiv.2206.06285,
title = {The remarkable prospect for quantum-dot-coupled tin qubits in silicon},
author = {Wayne M. Witzel and Jesse J. Lutz and Dwight R. Luhman},
journal= {arXiv preprint arXiv:2206.06285},
year = {2022}
}