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The strong coupling diagram technique is used for investigating states near the metal-insulator transition in the half-filled two-dimensional repulsive Hubbard model. The nonlocal third-order term is included in the irreducible part along…

强关联电子 · 物理学 2018-10-30 A. Sherman

Electrostatic carrier doping using a field-effect-transistor structure is an intriguing approach to explore electronic phases by critical control of carrier concentration. We demonstrate the reversible control of the insulator-metal…

材料科学 · 物理学 2015-05-13 H. Nakamura , H. Tomita , H. Akimoto , R. Matsumura , I. H. Inoue , T. Hasegawa , K. Kono , Y. Tokura , H. Takagi

The magnetic field-induced superconductor-insulator-metal transition (SIMT) in partially deuterated $\kappa$-(BEDT-TTF)$_2$Cu[N(CN)$_2$]Br, which is just on the Mott boundary, has been observed using the infrared magneto-optical imaging…

Recent experiments on the two dimensional electron gas in various semiconductor devices have revealed an unexpected metal-insulator transition and have challenged the previously held assumption that there is no such transition in two…

强关联电子 · 物理学 2017-02-08 Sudip Chakravarty , Steven Kivelson , Chetan Nayak , Klaus Voelker

The electronic properties of quarter-filled organic materials showing spin-Peierls transition are investigated theoretically. By studying the one-dimensional extended Peierls-Hubbard model analytically as well as numerically, we find that…

强关联电子 · 物理学 2007-05-23 Makoto Kuwabara , Hitoshi Seo , Masao Ogata

Hybrid normal metal - insulator - superconductor microstructures suitable for studying an interference of electrons were fabricated. The structures consist of a superconducting loop connected to a normal metal electrode through a tunnel…

超导电性 · 物理学 2009-04-07 K. Yu. Arutyunov , T. T. Hongisto

We investigate hysteresis effects in a model for non-volatile memory devices. Two mechanisms are found to produce hysteresis effects qualitatively similar to those often experimentally observed in heterostructures of transition metal…

强关联电子 · 物理学 2007-05-23 Marcelo J. Rozenberg , Isao H. Inoue , Maria Jose Sanchez

We consider a model for a metal-insulator transition of correlated electrons in an external magnetic field. We find a broad region in interaction and magnetic field where metallic and insulating (fully magnetized) solutions coexist and the…

强关联电子 · 物理学 2009-10-31 V. Janis , G. Czycholl

By analyzing the temperature ($T$) and density ($n$) dependence of the measured conductivity ($\sigma$) of 2D electrons in the low density ($\sim10^{11}$cm$^{-2}$) and temperature (0.02 - 10 K) regime of high-mobility (1.0 and 1.5 $\times…

介观与纳米尺度物理 · 物理学 2009-07-21 L. A. Tracy , E. H. Hwang , K. Eng , G. A. Ten Eyck , E. P. Nordberg , K. Childs , M. S. Carroll , M. P. Lilly , S. Das Sarma

Using an \textit{ab initio} approach based on the GW approximation which includes strong local \textbf{k}-space correlations, the Metal-Insulator Transition of M$_2$ vanadium dioxide is broken down into its component parts and investigated.…

The problem of noninteracting electrons in the presence of annealed magnetic disorder, in addition to nonmagnetic quenched disorder, is considered. It is shown that the proper physical interpretation of this model is one of electrons…

统计力学 · 物理学 2009-11-07 D. Belitz , T. R. Kirkpatrick

A colossal insulator-to-metal transition in high-spin pyrite phase of $MnS_{2}$ has been experimentally observed \cite{colomns2}. There are two possibilities behind this colossal insulator-to-metal transition: (1) migration of $Mn$…

强关联电子 · 物理学 2021-10-06 Komal Kumari , Raman Sharma , Navinder Singh

We investigate the interplay of in-plane magnetic and transverse electric fields in AB-stacked bilayer graphene. In prior work, we demonstrated that this configuration induces an insulator-metal (IM) transition with large impact on the…

介观与纳米尺度物理 · 物理学 2026-03-27 Amarnath Chakraborty , Aleksandr Rodin , Shaffique Adam , Giovanni Vignale

The microscopic mechanism of the hydrogen-induced metal-insulator transition in SmNiO$_3$ is clarified by means of density-functional theory with the Hubbard U correction. While 100% of hydrogen doping per Ni atom has been supposed to be…

强关联电子 · 物理学 2022-10-17 Kunihiko Yamauchi , Ikutaro Hamada

We analyze the phase transitions of an interacting electronic system weakly coupled to free-electron leads by considering its zero-bias conductance. This is expressed in terms of two effective impurity models for the cases with and without…

强关联电子 · 物理学 2009-11-10 A. A. Aligia , K. Hallberg , B. Normand , A. P. Kampf

The electron spectrum structure in the half-filled Hubbard model is considered in terms of the one-particle Green's functions within many-electron representation. A simple analytical generalization of the single-site Hubbard-III…

强关联电子 · 物理学 2009-11-07 V. Yu. Irkhin , A. V. Zarubin

We present measurements of the optical spectra on single crystals of spinel-type compound \cis. This material undergoes a sharp metal-insulator transition at 230 K. Upon entering the insulating state, the optical conductivity shows an…

强关联电子 · 物理学 2009-11-10 N. L. Wang , G. H. Cao , P. Zheng , G. Li , Z. Fang , T. Xiang , H. Kitazawa , T. Matsumoto

A two-dimensional gas of non-interacting quasiparticles in a nearly periodic potential is considered at zero temperature. The potential is a superposition of a periodic potential, induced by the charge density wave of a Wigner crystal, and…

介观与纳米尺度物理 · 物理学 2007-05-23 K. Ziegler

We present the metal - insulator transition study of a quantum site percolation model on simple cubic lattice. Transfer matrix method is used to calculate transport properties - Landauer conductance - for the binary distribution of…

强关联电子 · 物理学 2009-11-13 Igor Travenec

We study the tunneling phenomenon of a ladder system with a Peierls distortion in a magnetic flux, and the response of electrons the insulator is investigated when the tunneling current flows on one-dimensional gapped chains along the…

介观与纳米尺度物理 · 物理学 2018-10-08 Ryuji Takahashi , Naoyuki Sugimoto
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