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相关论文: Anti-Ferroelectric Thin Films Phase Diagrams

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The glass transition temperature $T_{\rm g}$ and the temperature $T_{\alpha}$ corresponding to the peak in the dielectric loss due to the $\alpha$-process have been simultaneously determined as functions of film thickness d through…

软凝聚态物质 · 物理学 2009-10-31 Koji Fukao , Yoshihisa Miyamoto

Macroscopic properties of ferroelectric samples, including those in form of thin films, are, to large extent, influenced by their domain structure. In this paper the free energy is calculated for a plate-like sample composed of…

材料科学 · 物理学 2007-05-23 A. Kopal , P. Mokry , J. Fousek , T. Bahnik

Amorphous ferrimagnetic TbFeCo thin films are found to exhibit exchange bias effect near the compensation temperature by magnetic hysteresis loop measurement. The observed exchange anisotropy is believed to originate from the exchange…

介观与纳米尺度物理 · 物理学 2016-06-22 Chung T. Ma , Xiaopu Li , S. Joseph Poon

Pressure-induced polarization switching in ferroelectric thin films has emerged as a powerful method for domain patterning, allowing to create predefined domain patterns on free surfaces and under thin conductive top electrodes. However,…

材料科学 · 物理学 2017-12-06 Ye Cao , Anna Morozovska , Sergei V. Kalinin

The strain dependence of electric and magnetic properties has been widely investigated, both from a fundamental science perspective and an applications point of view. Electromechanical coupling through field-induced polarization rotation…

材料科学 · 物理学 2015-06-22 Zhiguang Wang , Yaojin Wang , Haosu Luo , Jiefang Li , D. Viehland

Ferroelectrics have shown potential as a promising alternative material for future photovoltaic applications. Observance of high open circuit voltages in ferroelectric thin films, have generated considerable interest in the field of…

材料科学 · 物理学 2013-04-08 Harshan Vasudevan Nampoori

Recent studies have reported the existence of an epitaxially-stabilized tetragonal-like ('T-like') monoclinic phase in BiFeO3 thin-films with high levels of compressive strain. While their structural and ferroelectric properties are…

In thin film ferroelectric capacitor the chemical and electronic structure of the electrode/FE interface can play a crucial role in determining the kinetics of polarization switching. We investigate the electronic structure of a…

We report on the electric field control of magnetic phase transition temperatures in multiferroic Ni3V2O8 thin films. Using magnetization measurements, we find that the phase transition temperature to the canted antiferromagnetic state is…

材料科学 · 物理学 2007-11-28 P. Kharel , C. Sudakar , A. B. Harris , R. Naik , G. Lawes

Thin films and heterostructures of hexagonal manganites as promising multiferroic materials have attracted a considerable interest recently. We report structural transformations of high quality epitaxial h-TMO/YSZ(111) films, analyzed by…

强关联电子 · 物理学 2020-09-23 R. Mandal , M. Hirsbrunner , V. Roddatis , L. Schüler , U. Roß , S. Merten , V. Moshnyaga

Signal formation mechanism of Piezoresponse Force Microscopy of piezoelectric surface layers and thin films on stiff and elastically matched substrates is analyzed and thickness dependence of effective piezoelectric response, object…

材料科学 · 物理学 2009-11-13 Anna N. Morozovska , Eugene A. Eliseev , Sergei V. Kalinin

The low-dimensional ferroelectrics, ferrielectrics and antiferroelectrics are of urgent scientific interest due to their unusual polar, piezoelectric, electrocaloric and pyroelectric properties. The strain engineering and strain control of…

The polarization fatigue in (Pb0.97La0.02)(Zr0.95Ti0.05)O3 (PLZT) antiferroelectric thin films deposited onto silicon wafers is studied by investigating the effect of the peak/average/effective cycling voltage through varying the waveform…

Cupric oxide single crystal thin films were grown by plasma-assisted molecular beam epitaxy. X-ray diffraction, Raman spectrum and in situ reflection high-energy electron diffraction show that the thin films are 2x2 reconstructed with an…

材料科学 · 物理学 2017-01-04 K. G. Yang , S. X. Wu , F. M. Yu , W. Q. Zhou , Y. J. Wang , M. Meng , G. L. Wang , Y. L. Zhang , S. W. Li

A large number of experimental studies suggest two-terminal resistive switching devices made of a dielectric thin film sandwiched by a pair of electrodes exhibit reversible multi-state switching behaviors; however coherent understanding of…

应用物理 · 物理学 2023-08-22 Foroozan S. Koushan , Nobuhiko P. Kobayashi

The surface charge associated with the spontaneous polarization in ferroelectrics is well known to cause a depolarizing field that can be particularly detrimental in the thin-film geometry desirable for microelectronic devices. Incomplete…

材料科学 · 物理学 2021-09-10 Chiara Gattinoni , Nicola A. Spaldin

The metastable orthorhombic phase of hafnia is generally obtained in polycrystalline films, whereas in epitaxial films, its formation has been much less investigated. We have grown Hf0.5Zr0.5O2 films by pulsed laser deposition, and the…

材料科学 · 物理学 2019-02-28 Jike Lyu , Ignasi Fina , Raul Solanas , Josep Fontcuberta , Florencio Sánchez

Perovskite ferroelectric oxides are usually considered to be brittle materials, however, recent work [Dong et al., Science 366, 475 (2019)] demonstrated the super-elasticity in the freestanding BaTiO3 thin films. This property may originate…

材料科学 · 物理学 2020-04-15 Changqing Guo , Guohua Dong , Ziyao Zhou , Ming Liu , Houbing Huang , Jiawang Hong , Xueyun Wang

Currently used methods for the description of thermodynamics of ferroelectric thin films (Landau theory or ab initio based Monte-Carlo simulations) are based on an energy expansion in terms of internal degrees of freedom. It was shown that…

材料科学 · 物理学 2013-05-08 Alexander Kvasov , Alexander K. Tagantsev

We discuss ferroelectric phase transitions into single- and multidomain states in very thin films using continuous theory. It is shown that in nearly cubic ferroelectrics the domain state may survive down to atomic film thicknesses, unlike…

材料科学 · 物理学 2007-05-23 A. M. Bratkovsky , A. P. Levanyuk