相关论文: A multiplexed single electron transistor for appli…

The single electron transistor (SET) offers unparalled opportunities as a nano-scale electrometer, capable of measuring sub-electron charge variations. SETs have been proposed for read-out schema in solid-state quantum computing where…

Single-electron transistors (SETs) have been extensively used as charge sensors in many areas such as quantum computations. In general, the signals of SETs are smaller than those of complementary metal-oxide semiconductor (CMOS) devices,…

We evaluate the detector nonideality (and energy sensitivity) of a normal-state single-electron transistor (SET) in the cotunneling regime in a two-charge-state approximation. For small conductances and at zero temperature, the SET's…

The quantum efficiency, which characterizes the quality of information gain against information loss, is an important figure of merit for any realistic quantum detectors in the gradual process of collapsing the state being measured. In this…

We have incorporated an aluminum single electron transistor (SET) directly on top of a vertical quantum dot, enabling the use of the SET as an electrometer that is extremely responsive to the motion of charge into and out of the dot. Charge…

The single electron transistor (SET) is a prime candidate for reading out the final state of a qubit in a solid state quantum computer. Such a measurement requires the detection of sub-electron charge motion in the presence of random…

We have fabricated and characterized a new type of electrometer that couples two parallel single-electron transistors (SETs) to a radio-frequency tank circuit for use as a differential RF-SET. We demonstrate operation of this device in…

The radio frequency single electron transistor (rf-SET) possesses key requirements necessary for reading out a solid state quantum computer. This work explores the use of the rf-SET as a single-shot readout device in the presence of 1/f and…

We solve the master equations of two charged qubits measured by a single-electron transistor (SET) consisted of two islands. We show that in the sequential tunneling regime the SET current can be used for reading out results of quantum…

We review the status of the understanding of single-electron transport (SET) devices with respect to their applicability in metrology. Their envisioned role as the basis of a high-precision electrical standard is outlined and is discussed…

Single electron transistors (SETs) are very sensitive electrometers and they can be used in a range of applications. In this paper we give an introduction to the SET and present a full quantum mechanical calculation of how noise is…

Charge-based qubits have been proposed as fundamental elements for quantum computers. One commonly proposed readout device is the single-electron transistor (SET). SETs can distinguish between localized charge states, but lack the…

The quantum conductance of the single-electron tunneling (SET) transistor is investigated in this paper by the functional integral approach. The formalism is valid for arbitrary tunnel resistance of the junctions forming the SET transistor…

We describe a method to control and detect in single-shot the electron spin state of an individual donor in silicon with greatly enhanced sensitivity. A silicon-based Single-Electron Transistor (SET) allows for spin-dependent tunneling of…

We calculate the spectral density of voltage fluctuations in a Single Electron Transistor (SET), biased to operate in a transport mode where tunneling events are correlated due to Coulomb interaction. The whole spectrum from low frequency…

Based on the understanding that chemical bonds can act as tunnel junctions in the Coulomb blockade regime, and on the technical ability to coat a DNA strand with metal, we suggest that DNA can be used to built logical devices. We discuss…

We investigate qubit measurements using a single electron transistor (SET). Applying the Schr\"odinger equation to the entire system we find that an asymmetric SET is considerably more efficient than a symmetric SET. The asymmetric SET…

A simple and highly reproducible single electron transistor (SET) has been fabricated using gated silicon nanowires. The structure is a metal-oxide-semiconductor field-effect transistor made on silicon-on-insulator thin films. The channel…

A dual mode device behaving either as a field-effect transistor or a single electron transistor (SET) has been fabricated using silicon-on-insulator metal oxide semiconductor technology. Depending on the back gate polarisation, an electron…

We demonstrate the proof of principle for a ternary adder using silicon metal-on-insulator single electron transistors (SET). Gate dependent rectifying behavior of a single electron transistor results in a robust three-valued output as a…