相关论文: Quantum-size effect and tunneling magnetoresistanc…

We predict that the Curie temperature of a ferromagnetic resonant tunneling diode will decrease abruptly, by approximately a factor of two, when the downstream chemical potential falls below the quantum well resonance energy. This property…

Changing the morphology of the growing surface and the nature of residual impurities in (Ge,Mn) layers - by using different substrates - dramatically changes the morphology of the ferromagnetic Mn-rich inclusions and the magnetotransport…

We study the quantum Hall states in the lowest Landau level for a single wide quantum well. Due to a separation of charges to opposite sides of the well, a single wide well can be modelled as an effective two level system. We provide…

We present lateral transport measurements on strongly, vertically coupled quantum dots formed in separate quantum wells in a GaAs/AlGaAs heterostructure. Coulomb oscillations are observed forming a honeycomb lattice consistent with two…

We have studied tunnel magnetoresistance (TMR) in junctions with 3d ferromagnetic electrodes. Previously we predicted that defects in the barrier would result in reduced effective polarization P of the impurity assisted current. This is…

We study experimentally and theoretically the effects of disorder, nonlinear screening, and magnetism in semiconductor heterostructures containing a $\delta$-layer of Mn, where the charge carriers are confined within a quantum well and…

Spin-transfer ferromagnetic resonance (ST-FMR) in symmetric magnetic tunnel junctions (MTJs) with a varied thickness of the MgO tunnel barrier (0.75 nm < $t_{MgO}$ < 1.05 nm) is studied using the spin-torque diode effect. The application of…

To clarify the whole picture of the valence-band structures of prototype ferromagnetic semiconductors (III,Mn)As (III: In and Ga), we perform systematic experiments of the resonant tunneling spectroscopy on [(In_0.53Ga_0.47)_1-x Mn_x]As…

We study theoretically resonant tunneling of composite fermions through their quasi-bound states around a fractional quantum Hall island, and find a rich set of possible transitions of the island state as a function of the magnetic field or…

We demonstrate the spin valve effect by ballistic transport in fully epitaxial MnAs ferromagnetic metal / GaAs semiconductor / GaAs:MnAs granular hybrid heterostructures. The GaAs:MnAs material contains ferromagnetic MnAs nanoparticles in a…

We report the observation of both resonant quantum tunneling of magnetization (RQTM) and resonant quantum magnetodielectric (RQMD) effect in the perovskite multiferroic metal-organic framework [CH3NH3]Co(HCOO)3. An intrinsic magnetic phase…

The macroscopic quantum tunneling of a planar domain wall in a ferromagnetic metal is studied based on the Hubbard model. It is found that the ohmic dissipation is present even at zero temperature due to the gapless Stoner excitation, which…

In the fractional quantum Hall effect regime we measure diagonal ($\rho_{xx}$) and Hall ($\rho_{xy}$) magnetoresistivity tensor components of two-dimensional electron system (2DES) in gated GaAs/Al$_{x}$Ga$_{1-x}$As heterojunctions,…

In this study we have measured the magnetoresistance response of inverted HgTe quantum wells in the presence of a large parallel magnetic field up to 33 T is applied. We show that in quantum wells with inverted band structure a…

Quantum tunneling between two potential wells in a magnetic field can be strongly increased when the potential barrier varies in the direction perpendicular to the line connecting the two wells and remains constant along this line. An…

We show that engineering of tunnel barriers forming at the interfaces of a one-dimensional spin valve provides a viable path to a strong gate-voltage tunability of the magnetoresistance effect. In particular, we investigate theoretically a…

Colossal magnetoresistance (CMR) is commonly observed in magnetic semiconductors when an external magnetic field is applied, usually accompanied by anomalous resistivity peaks or humps which were previously considered as evidence of a…

The results of experimental study of interference induced magnetoconductivity in narrow HgTe quantum wells of hole-type conductivity with a normal energy spectrum are presented. Interpretation of the data is performed with taking into…

In the paper the version of the field effect tunnel nano transistor on quantum well is researched, where the control voltage is applied to the barriers surrounding the quantum well, and electron drain comes from the quantum well. Electrons…

Transport properties of highly mobile 2D electrons are studied in symmetric GaAs quantum wells placed in titled magnetic fields. Quantum positive magnetoresistance (QPMR) is observed in magnetic fields perpendicular to the 2D layer.…