相关论文: Charge-dependent migration pathways for the Ga vac…
Ballistic transport and resonance phenomena are elucidated in the one-dimensional $\alpha$-Fermi-Pasta-Ulam-Tsingou (FPUT) model using an approach of computing thermal response functions. The existence of periodic oscillations in spatially…
The resistance of dual-gated bilayer graphene is measured as a function of temperature and gating electric fields in the Corbino geometry which precludes edge transport. The temperature-dependent resistance is quantitatively described by a…
Heterostructures of 2D van der Waals semiconductor materials offer a diverse playground for exploring fundamental physics and potential device applications. In InSe/GaSe heterostructures formed by sequential mechanical exfoliation and…
Fast dynamic processes between electrons in solids and a foreign atom represent a fundamental challenge for describing interactions in many-body systems and are a prerequisite for modelling materials modification. We experimentally…
According to defect chemistry, the experimental observations of enhanced cation diffusion in a reducing atmosphere in zirconia, ceria and barium titanate are in support of an interstitial mechanism. Yet previous computational studies always…
Energetic particle redistribution in the presence of multiple Alfv\'en eigenmodes is analyzed in [PPCF 58, 014019 (2016)] for the ITER 15MA baseline scenario: non-linear hybrid simulations (within their well known limits) point out that…
We report on the dielectric degradation of Rare-Earth Oxides (REOs), when used as interfacial buffer layers together with HfO2 high-k films (REOs/HfO2) on high mobility Ge substrates. Metal-Oxide-Semiconductor (MOS) devices with these…
Revisiting charge transport in degenerate hopping systems we present a modification to the drift diffusion equation where instead of employing the generalized Einstein relation we add an energy flux term thus solving several…
The formation of bound electron-hole pairs, also called charge-transfer (CT) states, in organic-based photovoltaic devices is one of the dominant loss mechanisms hindering performance. While CT state dynamics following electron transfer…
Using the tight-binding model, we investigate the influence of vacancy disorder on electrical transport in graphene Hall bars in the presence of quantizing magnetic fields. Disorder, induced by a random distribution of monovacancies, breaks…
We consider a one-dimensional fermionic lattice system with long-ranged power-law decaying hopping with exponent $\alpha$. The system is further subjected to dephasing noise in the bulk. We investigate two variants of the problem: (i) an…
We report a thermally activated metastability in a GaAs double quantum dot exhibiting real-time charge switching in diamond shaped regions of the charge stability diagram. Accidental charge traps and sensor back action are excluded as the…
We investigate electron spin relaxation in GaAs in the proximity of a Fe/MgO layer using spin-resolved optical pump-probe spectroscopy, revealing a strong dependence of the spin relaxation time on the strength of an exchange-driven…
We consider transport in the insulating regime of GaMnAs. We calculate the resistance, magnetoresitance and Hall effect, assuming that the Fermi energy is in the region of localized states above the valence band mobility edge. Both hopping…
We theoretically study transport properties of a two-dimensional electron system on a hydrogen-passivated Si(111) surface in the field-effect-transistor (FET) configuration. We calculate the density and temperature dependent mobility and…
We study experimentally the motion of an intruder dragged into an amorphous monolayer of horizontally vibrated grains at high packing fractions. This motion exhibits two transitions. The first transition separates a continuous motion regime…
We develop a version of the vacancy mediated tracer diffusion model, which follows the properties of the physical system of In atoms diffusing within the top layer of Cu(001) terraces. This model differs from the classical tracer diffusion…
We report on the transport measurements of two-dimensional holes in GaAs field effect transistors with record low densities down to 7*10^8 cm^{-2}. Remarkably, such a dilute system (with Fermi wavelength approaching 1 micrometer) exhibits a…
New experiments were proposed recently to investigate the regime of cold atomic and molecular ion-atom collision processes in a special hybrid neutral-atom--ion trap under high vacuum conditions. The collisional cooling of laser pre-cooled…
The wide-band limit is a commonly used approximation to analyze transport through nanoscale devices. In this work we investigate its applicability to the study of charge and heat transport through molecular break junctions exposed to…