相关论文: Spin interference in silicon three-terminal one-di…
We present the first findings of the spin transistor effect caused by the Rashba gate-controlled ring embedded in the p-type self-assembled silicon quantum well that is prepared on the Si (100) surface. The coherence and phase sensitivity…
We present the first findings of the spin transistor effect in the Rashba gate-controlled ring embedded in the p-type self-assembled silicon quantum well that is prepared on the n-type Si (100) surface. The coherence and phase sensitivity…
We present the findings of the spin-dependent transport of the 2D holes in the p-type ultra-narrow self-assembled silicon quantum well (Si-QW) confined by the superconductor barriers on the n-type Si (100) surface. The Aharonov-Casher…
We have obtained numerically exact results for the spin-related geometric quantum phases that arise in p-type semiconductor ring structures. The interplay between gate-controllable (Rashba) spin splitting and quantum-confinement-induced…
Quantum interference effects in rings provide suitable means for controlling spin at mesoscopic scales. Here we apply such control mechanisms to coherent spin-dependent transport in one- and two-dimensional rings subject to Rashba…
We discuss the transport properties of a quantum spin-Hall insulator with sizable Rashba spin-orbit coupling in a disk geometry. The presence of topologically protected helical edge states allows for the control and manipulation of spin…
We report the experimental observation of the spin-Hall effect in a two-dimensional (2D) hole system with Rashba spin-orbit coupling. The 2D hole layer is a part of a p-n junction light-emitting diode with a specially designed co-planar…
Quantum interference effects in rings provide suitable means to control spins at the mesoscopic scale. In this chapter we present the theory underlying spin-induced modulations of unpolarized currents in quantum rings subject to the Rashba…
The spin-interference that is caused by the Rashba spin-orbit interaction in a gate-controlled Aharonov-Bohm ring is studied by the analysis of the conductance oscillations as a function of both the gate voltage and magnetic field. The…
We investigate spin transport of heavy holes in III-V semiconductor quantum wells in the presence of spin-orbit coupling of the Rashba type due to structure-inversion asymmetry. Similarly to the case of electrons, the longitudinal spin…
We propose an all-electrical nanoscopic structure where {\em pure} spin current is induced in the transverse voltage probes attached to {\em quantum-coherent} one-dimensional ring when conventional unpolarized charge current is injected…
The CV measurements and tunneling spectroscopy are used to study the ballistic transport of the spin-polarized holes by varying the value of the Rashba spin-orbit interaction (SOI) in the p-type quantum well prepared on the surface of the…
We calculate the spin Hall conductivity driven by Rashba spin-orbit interaction in $p$-type two-dimensional semiconductors in the presence of a perpendicular magnetic field. For a highly confined quantum well, the system is described by a…
We present the findings of the 0.7(2e2/h) feature in the hole quantum conductance staircase that is caused by silicon one-dimensional channels prepared by the split-gate method inside the p-type silicon quantum well (SQW) on the n-type Si…
In this review article we describe spin-dependent transport in materials with spin-orbit interaction of Rashba type. We mainly focus on semiconductor heterostructures, topological insulators, graphene and hybrid structures involving…
Magneto-transport properties of a two-dimensional electron gas in a chain of planar quantum rings are investigated under the Rashba spin-orbit interaction and a transverse homogeneous magnetic field. A modulation potential function models…
We study the quantum interference effects induced by the Aharonov-Casher phase in a ring structure in a two-dimensional heavy hole (HH) system with spin-orbit interaction realizable in narrow asymmetric quantum wells. The influence of the…
We present a theoretical study of a spin field-effect transistor realized in a quantum well formed in a p--doped ferromagnetic-semiconductor- nonmagnetic-semiconductor-ferromagnetic-semiconductor hybrid structure. Based on an…
The third-rank tensor of the static spin Hall conductivity is investigated for two-dimensional (2D) topological insulators by electronic structure calculations. Its seeming quantization is numerically demonstrated for highly symmetric…
Spin-orbit interaction is investigated in a dual gated InAs/GaSb quantum well. Using an electric field the quantum well can be tuned between a single carrier regime with exclusively electrons as carriers and a two-carriers regime where…