相关论文: Nanoscopic processes of Current Induced Switching …
Current Induced Resistance Switching (CIS) was recently observed in thin tunnel junctions with ferromagnetic (FM) electrodes \emph{i.e} FM/I/FM. This effect was attributed to electromigration of metallic atoms in nanoconstrictions in the…
Current Induced Resistance Switching (CIS) was recently observed in thin tunnel junctions (TJs) with ferromagnetic (FM) electrodes and attributed to electromigration of metallic atoms in nanoconstrictions in the insulating barrier. The CIS…
Perpendicular magnetic tunnel junctions based on MgO/CoFeB structures are of particular interest for magnetic random-access memories because of their excellent thermal stability, scaling potential, and power dissipation. However, the major…
The spin-transfer effect has been studied in magnetic tunnel junctions (PtMn/CoFe/Ru/CoFe/Al2O3/CoFe/NiFe) with dimensions down to 0.1x0.2 um2 and resistance-area product RA in the range of 0.5-10 Ohm m2 (dR/R=1-20%). Current-induced…
Current induced magnetization dynamics in asymmetric Cu/Co/Cu single magnetic layer nanopillars has been studied experimentally at room temperature and in low magnetic fields applied perpendicular to the thin film plane. In sub-100 nm…
We report measurements of magnetic switching and steady-state magnetic precession driven by spin-polarized currents in nanoscale magnetic tunnel junctions with low-resistance, < 5 Ohm-micron-squared, barriers. The current densities required…
We report on room temperature magnetoresistance and low frequency noise in sub-100nm elliptic CoFeB/MgO/CoFeB magnetic tunnel junctions with ultrathin (0.9nm) barriers. For magnetic fields applied along the hard axis, we observe current…
We report the observation and micromagnetic analysis of current-driven magnetization switching in nanoscale ring-shaped magnetic tunnel junctions. When the electric current density exceeds a critical value of the order of $6\times…
A new mechanism different from the spin accumulation picture is proposed for the current induced magnetization switching in magnetic tunnel junctions by taking into account the effect of the electron electron interaction. We found in tunnel…
The combination of superconducting and magnetic materials to create novel superconducting devices has been motivated by the discovery of Josephson critical current (Ics) oscillations as a function of magnetic layer thickness and the…
Metal-to-insulator transitions (MIT) can be driven by a number of different mechanisms, each resulting in a different type of insulator -- Change in chemical potential can induce a transition from a metal to a band insulator; strong…
Recently, it has been shown that magnetic tunnel junctions with thin MgO tunnel barriers exhibit extraordinarily high tunneling magnetoresistance (TMR) values at room temperature1, 2. However, the physics of spin dependent tunneling through…
Ultra-thin magnetic tunnel junctions with low resistive MgO tunnel barriers are prepared to examine their stability under large current stress. The devices show magnetoresistance ratios of up to 110 % and an area resistance product of down…
Current-driven magnetization switching in low-resistance Co40Fe40B20/MgO/Co40Fe40B20 magnetic tunnel junctions (MTJs) is reported. The critical-current densities Jc required for current-driven switching in samples annealed at 270C and 300C…
Spin-resolved electron symmetry filtering is a key mechanism behind giant tunneling magnetoresistance (TMR) in Fe/MgO/Fe and similar magnetic tunnel junctions (MTJs), providing room temperature functionality in modern spin electronics.…
We investigated the effect of using a synthetic ferrimagnetic (SyF) free layer in MgO-based magnetic tunnel junctions (MTJs) on current-induced magnetization switching (CIMS), particularly for application to spin-transfer torque random…
The observation of the gate-controlled supercurrent (GCS) effect in superconducting nanostructures increased the hopes for realizing a superconducting equivalent of semiconductor field-effect transistors. However, recent works attribute…
Temperature dependence of the tunnel magnetoresistance (TMR) was calculated in range of the quantum-ballistic model in the magnetic tunnel junctions (MTJs) with embedded nanoparticles (NPs). The electron tunnel transport through NP was…
Electric-field control of spin states offers a promising route to ultra-low-power, ultra-fast magnetization switching in spintronic devices such as magnetic tunnel junctions (MTJs). Recent progress in modulating spin-orbit interactions at…
Current-driven magnetization reversal in a ferromagnetic semiconductor based (Ga,Mn)As/GaAs/(Ga,Mn)As magnetic tunnel junction is demonstrated at 30 K. Magnetoresistance measurements combined with current pulse application on a rectangular…