相关论文: Magnetic field-assisted manipulation and entanglem…

We analyze several important issues for the single- and two-qubit operations in Si quantum computer architectures involving P donors close to a SiO2 interface. For a single donor, we investigate the donor-bound electron manipulation (i.e.…

We propose a method to electrically control electron spins in donor-based qubits in silicon. By taking advantage of the hyperfine coupling difference between a single-donor and a two-donor quantum dot, spin rotation can be driven by…

Individual donors in silicon chips are used as quantum bits with extremely low error rates. However, physical realizations have been limited to one donor because their atomic size causes fabrication challenges. Quantum dot qubits, in…

Doped Si is a promising candidate for quantum computing due to its scalability properties, long spin coherence times, and the astonishing progress on Si technology and miniaturization in the last few decades. This proposal for a quantum…

Control of hyperfine interactions is a fundamental requirement for quantum computing architecture schemes based on shallow donors in silicon. However, at present, there is lacking an atomistic approach including critical effects of…

Full electrical control of quantum bits could enable fast, low-power, scalable quantum computation. Although electric dipoles are highly attractive to couple spin qubits electrically over long distances, mechanisms identified to control…

Spins of donor electrons and nuclei in silicon are promising quantum bit (qubit) candidates which combine long coherence times with the fabrication finesse of the silicon nanotechnology industry. We outline a potentially scalable spin qubit…

While traditionally considered a deleterious effect in quantum dot spin qubits, the spin-orbit interaction is recently being revisited as it allows for rapid coherent control by on-chip AC electric fields. For electrons in bulk silicon, SOC…

We present two strategies for performing two-qubit operations on the electron spins of an exchange-coupled pair of phosphorus donors in silicon, using the ability to set the donor nuclear spins in arbitrary states. The effective magnetic…

An electron spin qubit in a silicon donor atom is a promising candidate for quantum information processing because of its long coherence time. To be sensed with a single-electron transistor, the donor atom is usually located near an…

We investigate theoretically donor-based charge qubit operation driven by external electric fields. The basic physics of the problem is presented by considering a single electron bound to a shallow-donor pair in GaAs: This system is closely…

Silicon-based quantum-computer architectures have attracted attention because of their promise for scalability and their potential for synergetically utilizing the available resources associated with the existing Si technology…

Quantum computation and simulation requires strong coherent coupling between qubits, which may be spatially separated. Achieving this coupling for solid-state based spin qubits is a long-standing challenge. Here we theoretically investigate…

The possibility of performing single spin measurements in Si-based quantum computers through electric field control of electrons bound to double donors near a barrier interface is assessed. We find that both the required electric fields and…

The electronic and nuclear spin degrees of freedom for donor impurities in semiconductors form ultra coherent two-level systems that are useful for quantum information applications. Spins naturally have magnetic dipoles, so alternating…

We study diffusive electron-electron interaction correction to conductivity by analyzing simultaneously $\rho_{xx}$ and $\rho_{xy}$ for disordered 2D electron systems in Si in tilted magnetic field. Tilting the field is shown to be a…

We investigate the spin-dependent transport properties of a two-dimensional electron gas formed at oxides' interface in the presence of a magnetic field. We consider several scenarios for the oxides' properties, including oxides with…

We present an approach for entangling spin qubits via capacitive coupling mediated by an ac electric field-driven multielectron mediator quantum dot. To illustrate this method, we consider the case of a driven two-electron dot that mediates…

Silicon quantum dots are considered an excellent platform for spin qubits, partly due to their weak spin-orbit interaction. However, the sharp interfaces in the heterostructures induce a small but significant spin-orbit interaction which…

We investigate the effects of the orientation of the magnetic field and the orientation of a quantum dot, with respect to crystallographic coordinates, on the quality of an electrically controlled qubit realized in a gated semiconductor…