相关论文: Ion implanted Si:P double-dot with gate tuneable i…

We study the charge transport and thermoelectric properties of the junction, comprising double quantum dot embedded in T-shaped geometry on the interface between two normal/ferromagnetic electrodes and superconducting lead. We show that the…

We report on the insulator-to-metal transition in Se-hyperdoped Si layers driven by manipulating the Se concentration via non-equilibrium material processing, i.e. ion implantation followed by millisecond-flash lamp annealing. Electrical…

Electromagnetically induced transparency (EIT) has usually been demonstrated by using three-level atomic systems. In this paper, we theoretically proposed an efficient method to realize EIT in microwave regime through a coupled system…

We show that the doping-controlled superconductor-insulator transition (SIT) in a high critical temperature cuprate system (Bi2Sr2-xLaxCaCu2O8+delta) exhibits a fundamentally different behavior than is expected from conventional SIT. At the…

We have fabricated and investigated a stacked two-chip device, consisting of a lumped element resonator on one chip, which is side-coupled to a coplanar waveguide transmission line on a second chip. We present a full model to predict the…

This article presents the implementation of on-chip iontronic circuits via small-scale integration of multiple ionic logic gates made of bi-polar polyelectrolyte diodes. These ionic circuits are analogous to solid-state electronic circuits,…

We investigate a hybrid metallic island / single dopant electron pump based on fully-depleted silicon on insulator technology. Electron transfer between the central metallic island and the leads is controlled by resonant tunneling through…

We investigate a method for entangling two singlet-triplet qubits in adjacent double quantum dots via capacitive interactions. In contrast to prior work, here we focus on a regime with strong interactions between the qubits. The interplay…

Experimental results on the metal-insulator transitions and the anomalous properties of strongly interacting two-dimensional electron systems are reviewed and critically analyzed. Special attention is given to recent results for the…

We propose and demonstrate experimentally a novel design of single-electron quantum dots. The structure consists of a narrow band gap quantum well that can undergo a transition from the hole accumulation regime to the electron inversion…

We predict a new electron pair-tunneling (PT) resonance in non-linear transport through quantum dots with positive charging energies exceeding the broadening due to thermal and quantum fluctuations. The PT resonance shows up in the…

Single-electron transistors have been proposed to be used as a read-out device for Cooper pair charge qubits. Here we show that a coupled superconducting transistor at a threshold voltage is much more effective in measuring the state of a…

The influence of an impurity atom on the electrostatic behaviour of a Single Molecular Transistor (SMT) was investigated through Ab-initio calculations in a double-gated geometry. The charge stability diagram carries unique signature of the…

In this letter, we describe operation of a radio-frequency superconducting single electron transistor (RF-SSET) with an on-chip superconducting LC matching network consisting of a spiral inductor L and its capacitance to ground. The…

We propose a scheme for electrical measurement of two-electron spin states in a semiconductor double quantum dot. We calculated the adiabatic charge transfer when surface gates are modulated in time. Because of spin-orbit coupling in the…

A metallic double-dot is measured with radio frequency reflectometry. Changes in the total electron number of the double-dot are determined via single electron tunnelling contributions to the complex electrical impedance. Electron counting…

The electrostatic interaction between two capacitively-coupled metal double-dots is studied at low temperatures. Experiments show that when the Coulomb blockade is lifted by applying appropriate gate biases to both double-dots, the…

We implement the impedance measurement technique (IMT) for characterization of interferometer-type superconducting qubits. In the framework of this method, the interferometer loop is inductively coupled to a high-quality tank circuit. We…

In this work, we investigate the dynamics of a single electron surface trap, embedded in a self-assembly metallic double-dot system. The charging and discharging of the trap by a single electron is manifested as a random telegraph signal of…

We investigate a double-layer of penetrable ions near a charged wall. We find a new mechanism for charge reversal that occurs in the weak-coupling regime and, accordingly, the system is suitable for the mean-field analysis. The…