相关论文: Electric-field-dependent spectroscopy of charge mo…

We present a systematic analysis on the basis of ab initio calculations and many-body perturbation theory for clarifying the dominant fluctuation in complex charge-spin-orbital coupled systems. For a tight-binding multiband model obtained…

We report on spectroscopy of a single dopant atom in silicon by resonant tunneling between source and drain of a gated nanowire etched from silicon on insulator. The electronic states of this dopant isolated in the channel appear as…

We study gated field effect transistors (FETs) with fractal geometries under Dyakonov and Shur asymmetric boundary conditions, where the source and drain span the left and right edges of the device respectively. An AC THz potential…

Multiple-band electronic structure and proximity to antiferromagnetic (AF) instability are the key properties of iron-based superconductors. We explore the influence of scattering by the AF spin fluctuations on transport of multiple-band…

We consider electron self-trapping due to its interaction with order-parameter fluuctuations at the second-order phase-transition or critical point (for example, at the Curie temperature in magnetic or ferroelectric semiconductors). Using…

We revise the long studied problem of fluctuation conductivity (FC) in disordered two-dimensional superconductors placed in a perpendicular magnetic field by finally deriving the complete solution in the temperature-magnetic field phase…

A theoretical and experimental description of the threshold, amplitude, and stability of a self-oscillating nanowire in a field emission configuration is presented. Two thresholds for the onset of self-oscillation are identified, one…

Fundamental physical properties limiting the performance of spin field effect transistors are compared to those of ordinary (charge-based) field effect transistors. Instead of raising and lowering a barrier to current flow these spin…

We used resonant laser spectroscopy of multiple confocal InGaAs quantum dots to spatially locate charge fluctuators in the surrounding semiconductor matrix. By mapping out the resonance condition between a narrow-band laser and the neutral…

In this work, we experimentally demonstrate two-state fluctuations in a metal-insulator-semiconductor (MIS) device formed out of a metallic atomic force microscopy tip, vacuum gap, and multilayer MoSe$_2$ sample. We show that noise in this…

Fluctuating electric fields emanating from surfaces are a primary source of decoherence in trapped ion qubits. Here, we show that superradiant phonon-induced excitation exchange between adatoms can lead to a reduction of electric field…

The effect of the charge fluctuations on the electronic and Raman spectrum of high temperature superconductors is examined, using the slave boson approach to the large Coulomb repulsion $U_d$ on the copper site. Instead of the saddle point…

We present a stochastic approach for charge transport in transistors. In this approach, the electron and hole densities are governed by diffusion-reaction stochastic differential equations satisfying local detailed balance and the electric…

We derive new general expressions for the fluctuating electromagnetic field outside a homogeneous material surface. The analysis is based on general results from the thermodynamics of irreversible processes, and requires no consideration of…

We demonstrate single-charge occupation of ambipolar quantum dots in silicon via charge sensing. We have fabricated ambipolar quantum dot (QD) devices in a silicon metal-oxide-semiconductor heterostructure comprising a single-electron…

Using a simple quantum master equation approach, we calculate the Full Counting Statistics of a single electron transistor strongly coupled to vibrations. The Full Counting Statistics contains both the statistics of integrated particle and…

We review our recent measurements of the complex AC conductivity of thin InO_x films studied as a function of magnetic field through the nominal 2D superconductor-insulator transition. These measurements - the first of their type to probe…

Nanotransistors typically operate in far-from-equilibrium (FFE) conditions, that cannot be described neither by drift-diffusion, nor by purely ballistic models. In carbonbased nanotransistors, source and drain contacts are often…

The strong coupling between electronic transport in a single-level quantum dot and a capacitively coupled nano-mechanical oscillator may lead to a transition towards a mechanically-bistable and blocked-current state. Its observation is at…

We report measurements of spin-dependent scattering of conduction electrons by neutral donors in an accumulation-mode field-effect transistor formed in isotopically enriched silicon. Spin-dependent scattering was detected using electrically…