相关论文: Hooge's Constant of Carbon Nanotube Field Effect T…

Carbon nanotubes (CNTs) have large intrinsic carrier mobility due to weak acoustic phonon scattering. However, unlike two-dimensional metal-oxide-semiconductor field effect transistors (MOSFETs), substrate surface polar phonon (SPP)…

We perform a detailed analysis of the band structure, phonon dispersion, and electron-phonon coupling of three types of small-radius carbon nanotubes (CNTs): (5,0), (6,0), and (5,5) with diameters 3.9, 4.7, and 6.8 \AA respectively. The…

In this letter we perform an experimental study of ionic transport and current fluctuations inside individual Carbon Nanotubes (CNT). The conductance exhibits a power law behavior at low salinity, with an exponent close to 1/3 versus the…

The electrical and optical response of a field-effect device comprising a network of semiconductor-enriched single-wall carbon nanotubes, gated with sodium chloride solution is investigated. Field-effect is demonstrated in a device that…

High-performance single-wall carbon nanotube field-effect transistors (SWNT-FETs) are fabricated using directed assembly and mass-produced carbon nanotubes (CNTs). These FETs exhibit operating characteristics comparable to state-of-the-art…

We present a novel and comprehensive model of 1/f noise in nanoscale graphene devices that accounts for the unusual and so far unexplained experimental characteristics. We find that the noise power spectral density versus carrier…

We show that $1/f$-noise in the variable range hopping regime is related to transitions of many-electrons clusters (fluctuators) between two almost degenerate states. Giant fluctuation times necessary for $1/f$-noise are provided by slow…

Carbon nanotube field-effect transistors with sub 20 nm long channels and on/off current ratios of > 1000000 are demonstrated. Individual single-walled carbon nanotubes with diameters ranging from 0.7 nm to 1.1 nm grown from structured…

We measured the low frequency (10mHz < f < 10Hz) resistance fluctuations (Noise) in single crystalline ferromagnetic Ni nanowires (diameter ~35nm) in the temperature range 80K-300K. The noise spectral power shows 1/f dependence. The…

Carbon nanotube field-effect transistors operate over a wide range of electron or hole density, controlled by the gate voltage. Here we calculate the mobility in semiconducting nanotubes as a function of carrier density and electric field,…

We explore the electric-field effect of carbon nanotubes (NTs) in electrolytes. Due to the large gate capacitance, Fermi energy shifts of order +/- 1 V can be induced, enabling to tune NTs from p to n-type. Consequently, large resistance…

We demonstrate a high electron conductivity (> 10^2 S/cm and up to 10^3 S/cm) of tungsten suboxide W18O(52.4-52.9)(or equivalently WO(2.91-2.94)) nanotubes (2 to 3 nm in diameter, ca. micrometer long). The conductivity is measured in the…

High-precision resistance noise measurements indicate that the epitaxial CoSi$_2$/Si hetero-structures at 150 K and 2 K (slightly above its superconducting transition temperature $T_c$ of 1.54 K) exhibit an unusually low 1/f noise level in…

We predict shot noise enhancement in defect-free carbon nanotube field-effect transistors through a numerical investigation based on the self-consistent solution of the Poisson and Schrodinger equations within the non-equilibrium Green…

The thermal properties of a suspended metallic single-wall carbon nanotube (SWNT) are extracted from its high-bias (I-V) electrical characteristics over the 300-800 K temperature range, achieved by Joule self-heating. The thermal…

Single-walled carbon nanotubes are promising nanoelectronic materials but face long-standing challenges including production of pure semiconducting SWNTs and integration into ordered structures. Here, highly pure semiconducting…

The temperature dependence of the band gap of semiconducting single-wall carbon nanotubes (SWNTs) is calculated by direct evaluation of electron-phonon couplings within a ``frozen-phonon'' scheme. An interesting diameter and chirality…

Using the molecular dynamics simulations and the force constant model we have studied the Raman-active tangential modes (TMs) of a (10, 0) single-wall carbon nanotube (SWNT) under hydrostatic pressure. With increasing pressure, the atomic…

Acoustoelectric Effect $AE$ in degenerate Carbon Nanotube ($CNT$) was theoretically studied for hypersound in the regime $ql >> 1$. The dependence of acoustoelectric current $j^{ac}$ on the acoustic wave number $\vec{q}$ and frequency…

We propose a model of $1/f$ noise in semiconductors based on the drift of individual charge carriers and their interaction with the trapping centers. We assume that the trapping centers are homogeneously distributed in the material. The…