相关论文: Unconventional Hall effect in oriented Ca$_3$Co$_4…
We report on the observation of a possible topological Hall effect in thin films of the itinerant ferromagnet Eu1-xSmxTiO3. EuTiO3 and Eu0.955Sm0.045TiO3 films were grown by molecular beam epitaxy. The EuTiO3 film is insulating. The Hall…
The normal-state Hall coefficient R_H and the in-plane resistivity \rho_{ab} are measured in La-doped Bi_{2}Sr_{2}CuO_{y} (T_c \simeq 13 K) single crystals and La_{2-x}Sr_{x}CuO_{4} thin films by suppressing superconductivity with 61-T…
We report the temperature dependence of resistivity (rho) and Hall coefficient (R_H) in the normal state of homogeneously disordered epitaxial NbN thin films with kFl~3.27-10.12. The superconducting transition temperature (Tc) of these…
The inverse spinel ferrimagnetic NiCo$_2$O$_4$ possesses high magnetic Curie temperature $T_C$, high spin polarization, and strain-tunable magnetic anisotropy. Understanding the thickness scaling limit of these intriguing magnetic…
Using a combined experimental and first-principles theoretical approach, we demonstrate interface engineering of the anomalous Hall effect in Ni-based epitaxial thin-film heterostructures. Ferromagnetic Ni thin films are grown on…
We have measured the longitudinal resistivity and the Hall resistivity in the ab-plane of highly c-axis-oriented MgB2 thin films. In the normal state, the Hall coefficient (R_H) behaves as R_H ~ T with increasing temperature (T) up to 130 K…
Investigations of the resistivity and the Hall effect as a function of electric field and temperature in the normal state and upper part of the superconducting transition of an optimally doped, very thin film of…
Electrical conductivity, Hall effect and magnetoresistance of In$_2$O$_3$:Sn thin films deposited on a glass substrates at different temperatures and oxygen pressures, as well as the films treated in a hydrogen plasma, have been…
Magnetoresistivity and Hall effect measured in magnetic fields up to B=9T (B||c, J||ab) in electron-doped $Nd_{2-x}$Ce_{x}Cu$O_{4+{\delta}} single crystal films with x = 0.14; 0.15; 0.18 and different oxygen content ({\delta}) were studied…
We report magnetoresistance and Hall Effect results for electron-doped films of the high-temperature superconductor La$_{2-x}$Ce$_x$CuO$_4$ (LCCO) for temperatures from 0.7 to 45 K and magnetic fields up to 65 T. For x = 0.12 and 0.13, just…
The anomalous Hall effect (AHE) of ferromagnetic thin films of Sr$_{1-x}$Ca$_{x}$RuO$_3$ (0 $\leq x \leq$ 0.4) is studied as a function of $x$ and temperature $T$. As $x$ increases, both the transition temperature $T_c$ and the…
A series of electron-doped cuprate La(2-x)CexCuO4 thin films with different thicknesses have been fabricated and their annealing time are adjusted carefully to ensure the highest superconducting transition temperature. The transport…
In this work, we present the investigation of temperature dependent hall measurement of the ultra thin VO$_2$ films grown on Si/SiO$_2$ substrate. Experimental results suggest that electrons are the predominant carrier both in the…
Noncollinear antiferromagnets with a D0$_{19}$ (space group = 194, P6$_{3}$/mmc) hexagonal structure have garnered much attention for their potential applications in topological spintronics. Here, we report the deposition of continuous…
Nd$_{2-x}$Ce$_x$CuO$_{4\pm\delta}$ (NCCO) epitaxial thin films have been deposited on (100) SrTiO$_3$ substrates by DC sputtering technique in different atmosphere. The as-grown samples show different dependence of the in-plane resistivity…
The observation of dissipationless anomalous Hall current is one of the experimental evidences to confirm the intrinsic origin of anomalous Hall effect. To study the origin of anomalous Hall effect in iron, Fe$_{100-x}$(SiO$_{2}$)$_{x}$…
We have performed both in-plane resistivity, Hall effect and specific heat measurements on the thermoelectric cobalt oxide Ca$_{3}$Co$_{4}$O$_{9}$. Four distinct transport regimes are found as a function of temperature, corresponding to a…
The anomalous Hall effect (AHE) of epitaxial SrRuO$_3$ films with varying lattice parameters is investigated, and analyzed according to the Berry-phase scenario. SrRuO$_3$ thin films were deposited on SrTiO$_3$ substrates directly, or using…
Ga2O3 thin films were deposited by reactive magnetron sputtering from a liquid gallium target. The influence of deposition temperature, substrate type, and discharge parameters on the structural and electrical properties was systematically…
Epitaxial, n-type ZnO films grown by a laser molecular-beam epitaxy method were investigated by the temperature-dependent Hall-effect technique. The 300-K carrier concentration and mobility were about $n_s \sim 10^{16}$ cm$^{-3}$ and 440…