相关论文: Mobility gap in intermediate valent TmSe
The controversy regarding the precise nature of the high-temperature phase of 1T-TiSe2 lasts for decades. It has intensified in recent times when new evidence for the excitonic origin of the low-temperature charge-density wave state started…
The temperature dependence of both components of the resistivity tensor $\varrho_{xx}(T)$ and $\varrho_{xy}(T)$ has been studied at T $\geq$ 4.2 K within IQHE plateaux around filling factors \nu=2 and \nu=4 of medium- -mobility GaAs/AlGaAs…
PbSe is a low-gap semiconductor with excellent infrared photo-detection properties. Here we report our high magnetic field and low temperature electrical properties measurement performed on a moderately doped PbSe single crystals with…
Transport properties of progressively reduced graphene oxide (GO) are described. Evolution of the electronic properties reveals that as-synthesized GO undergoes insulator-semiconductor-semi-metal transitions with reduction. The apparent…
We use scanning tunneling microscopy to investigate the (001) surface of cleaved SmB6 Kondo insulator. Variable temperature dI/dV spectroscopy up to 60 K reveals a gap-like density of state suppression around the Fermi level, which is due…
Covalent amorphous semiconductors, such as amorphous silicon (a-Si) and germanium (a-Ge), are commonly believed to have localized electronic states at the top of the valence band and the bottom of the conduction band. Electrical…
The Hall effect is investigated in thin-film samples of iron-chalcogenide superconductors in detail. The Hall coefficient (RH) of FeTe and Fe(Se1-xTex) exhibits a similar positive value around 300 K, indicating that the high-temperature…
Two-dimensional electron systems (2DESs) confined to the surface of narrowband semiconductors have attracted great interest since they can easily integrate with superconductivity (or ferromagnetism) enabling new possibilities in hybrid…
In this Letter, four-point magnetotransport of high mobility InGaAs/InP heterointerfaces is measured from 1.6 K to 300 K and from 0 to 15 T, and an analysis is shown whereby the mobility and density of the two-dimensional (2D) accumulation…
Elemental tellurium (Te) is a compelling van der Waals material due to its interesting chiral crystal structure and predicted topological properties. Here, we report the fabrication and comprehensive quantum transport study of devices based…
We report on a hierarchy of temperatures Tc < Tgap < Tmet in superconducting Rb1-xFe2-ySe2 observed by THz spectroscopy. Above Tmet = 90 K the material reveals semiconducting characteristics. Below Tmet a coherent metallic THz response…
Heusler type compounds have long been recognized as potential thermoelectric (TE) materials. Here, the experimentally observed TE properties of Fe$_{2}$VAl are understood through electronic structure calculations in the temperature range of…
At low energy scales charge transport in the insulating Si:P is dominated by activated hopping between the localized donor electron states. Thus, theoretical models for a disordered system with electron-electron interaction are appropriate…
Heusler compounds with six valence electrons per atom have attracted interest as thermoelectric materials owing to their semimetallic and semiconducting properties. Here, we theoretically and experimentally investigate electronic transport…
The present study examines the electronic transport characteristics of amorphous semiconductors through TOF measurements and numerical simulations. The primary objective is to determine the DOS in amorphous selenium (a-Se) and to assess the…
The band structure of the novel low-temperature thermoelectric material, \CBT, is calculated and analyzed using the semi-classic transport equations. It is shown that to obtain a quantitative agreement with measured transport properties a…
Atomically thin, two-dimensional (2D) indium selenide (InSe) has attracted considerable attention due to large tunability in the band gap (from 1.4 to 2.6 eV) and high carrier mobility. The intriguingly high dependence of band gap on layer…
We study how the non-Fermi-liquid two-phase state reveals itself in transport properties of high-mobility Si-MOSFETs. We have found features in zero-field transport, magnetotransport, and thermodynamic spin magnetization in a 2D correlated…
We have investigated the electrical resistivity, Seebeck coefficient and thermal conductivity of PdTe2 and 4% Cu intercalated PdTe2 compounds. Electrical resistivity for the compounds shows Bloch-Gruneisen type linear temperature (T)…
We comparatively investigated the transport properties for S- and Te-substituted FeSe thin films under magnetic fields to clarify the origin of the contrasting behavior of the superconducting transition temperature in S and Te substitution.…