相关论文: Modelling and Simulation of Charging and Dischargi…

Understanding charging mechanisms and charge retention dynamics of nanocrystal memory devices is important in optimization of device design. Capacitance spectroscopy on PECVD grown germanium nanocrystals embedded in a silicon oxide matrix…

This paper presents a set of models dedicated to describe a flash storage subsystem structure, functions, performance and power consumption behaviors. These models cover a large range of today's NAND flash memory applications. They are…

Investigating the correlations between dynamic and static storage properties of nanoporous electrodes is beneficial for further progress of supercapacitors-based technologies. While the dependence of the capacitance on the pores' sizes is…

For decades, conventional computers based on the von Neumann architecture have performed computation by repeatedly transferring data between their processing and their memory units, which are physically separated. As computation becomes…

We develop a theory of charge storage in ultra-narrow slit-like pores of nano\-structured electrodes. Our analysis is based on the Blume-Capel model in external field, which we solve analytically on a Bethe lattice. The obtained solutions…

Flash memory is a non-volatile computer memory comprised of blocks of cells, wherein each cell is implemented as either NAND or NOR floating gate. NAND flash is currently the most widely used type of flash memory. In a NAND flash memory,…

We present an implementation in a linear-scaling density-functional theory code of an electronic enthalpy method, which has been found to be natural and efficient for the ab initio calculation of finite systems under hydrostatic pressure.…

This paper presents the process optimization of a single-electron nanoflash electron memory. Self-aligned single dot memory structures have been fabricated using a wet anisotropic oxidation of a silicon nanowire. One of the main issue was…

In recent years, resistive RAM often referred to as memristor is actively pursued as a replacement for nonvolatile-flash memory due to its superior characteristics such as high density, scalability, low power operation, high endurance, and…

Electron transport within nanostructures can be important to varied engineering applications, such as thermoelectrics and nanoelectronics. In theoretical studies, electron Monte Carlo simulations are widely used as an alternative approach…

The processes of storage and dissipation of electromagnetic energy in nanostructures depend on both the material properties and the geometry. In this paper, the distributions of local energy density and power dissipation in nanogratings are…

A major challenge in the development of new battery materials is understanding their fundamental mechanisms of operation and degradation. Their microscopically inhomogeneous nature calls for characterization tools that provide operando and…

The description of carrier dynamics in spatially confined semiconductor nanocrystals (NCs), which have enhanced electron-hole and exciton-phonon interactions, is a great challenge for modern computational science. These NCs typically…

Recent measurements suggest the possibility to exploit ionic liquids (ILs) as smart lubricants for nano-contacts, tuning their tribological and rheological properties by charging the sliding interfaces. Following our earlier theoretical…

Binary collision simulations of high-fluence 1 keV Si ion implantation into 8 nm thick SiO2 films on (001)Si were combined with kinetic Monte Carlo simulations of Si nanocrystal (NC) formation by phase separation during annealing. For…

A hybrid scheme between large-scale electronic structure calculations is developed and applied to nanocrystalline silicon with more than 10$^5$ atoms. Dynamical fracture processes are simulated under external loads in the [001] direction.…

The operation of a novel nonvolatile memory device based on a conductive ferroelectric/non-ferroelectric thin film multilayer stack is simulated numerically. The simulation involves the self-consistent steady state solution of Poisson's…

In this paper we present NANOTCAD2D, a code for the simulation of the electrical properties of semiconductor-based nanoelectronic devices and structures in two-dimensional domains. Such code is based on the solution of the…

Process simulation are performed in order to simulate the full fabrication process of an alternative nano-flash memory in order to optimise it and to improve the understanding of the dot storage formation. The influence of various…

By modifying and extending recent ideas [C. Seoanez et al., Europhys. Lett. 78, 60002 (2007)], a theoretical framework to describe dissipation processes in the surfaces of vibrating micro- and nanoelectromechanical devices, thought to be…