English

Optimisation and Simulation of an Alternative nano-flash Memory: the SASEM device

Materials Science 2012-10-08 v2
Authors: Christophe Krzeminski , Emmanuel Dubois , Xiaohui Tang , Nicolas Reckinger , André Crahay , Vincent Bayot
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Abstract

Process simulation are performed in order to simulate the full fabrication process of an alternative nano-flash memory in order to optimise it and to improve the understanding of the dot storage formation. The influence of various parameters (oxidation temperature, nanowire shape) have been investigated.

Keywords

neuromorphic computing finite element method computational optimization

Cite

@article{arxiv.1109.2927,
  title  = {Optimisation and Simulation of an Alternative nano-flash Memory: the SASEM device},
  author = {Christophe Krzeminski and Emmanuel Dubois and Xiaohui Tang and Nicolas Reckinger and André Crahay and Vincent Bayot},
  journal= {arXiv preprint arXiv:1109.2927},
  year   = {2012}
}

Comments

Materials Research Society Fall Meeting, Boston : United States (2004)

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