相关论文: Electrical driving single barrier spin cell

Generating and controlling spin current (SC) are of central interest in spin physics and applications. To date, the spin-orbit interaction (SOI) is an established pathway to generate SC through the spin-charge current conversion. We predict…

Energy, momentum, and angular momentum are fundamental properties tied to the symmetries of space and time, with photons and other elementary particles acting as carriers of these quantities. In most optical and optoelectronic devices,…

We show that an initially unpolarized electron flow acquires spin polarization after passing through a lateral barrier in two-dimensional (2D) system with spin-orbit interaction (SOI) even if the current is directed normally to the barrier.…

Photon impingement is capable of liberating electrons in semiconductors. When the electron transport is primarily governed by temperature gradients, high irreversibilities will result, thus lowering converters' efficiencies. A fundamental…

Spintronic devices operating with pure spin currents represent a new paradigm in nanoelectronics, with higher energy efficiency and lower dissipation as compared to charge currents. This technology, however, will be viable only if the…

We show that electron tunneling from edge states in two-dimensional topological insulator into a parallel electron waveguide leads to the appearance of spin-polarized current in the waveguide. The spin polarization $P$ can be very close to…

We analyze the charge and spin dynamics in a DC biased double quantum dot driven by crossed DC and AC magnetic fields. In this configuration, spatial delocalization due to inter-dot tunnel competes with intra-dot spin rotations induced by…

The majority of experimental realizations of single-electron sources rely on the periodic manipulation of the tunnel junctions through their gate voltages, and thus require a high level of control over the system. To circumvent the…

Controlling electronic transport through a single-molecule junction is crucial for molecular electronics or spintronics. In magnetic molecular devices, the spin degree-of-freedom can be used to this end since the magnetic properties of the…

The spin-Hall effect describes the interconversion of charge currents and spin currents, enabling highly efficient manipulation of magnetization for spintronics. Symmetry conditions generally restrict polarizations of these spin currents to…

Spin transistors (whose on-off operation is achieved by electric-field-controlled spin orientation 1), if realized, can revolutionize modern electronics through the implementation of a faster and a more energy-efficient performance as well…

We find that the electronic spin rotation induced by drift transport around a closed path in a wide variety of nonmagnetic semiconductors at zero magnetic field depends solely on the physical path taken. Physical paths that produce any…

We propose a method to electrically control electron spins in donor-based qubits in silicon. By taking advantage of the hyperfine coupling difference between a single-donor and a two-donor quantum dot, spin rotation can be driven by…

Electron spins in a semiconductor quantum well couple to an electric field {\it via} spin-orbit interaction. We show that the standard spin-orbit coupling mechanisms can provide extraordinary efficient electron spin manipulation by an…

A possibility to perform single-electron computing without dissipation in the array of tunnel-coupled quantum dots is studied theoretically, taking the spin gate NOT (inverter) as an example. It is shown that the logical operation can be…

Using the Keldysh formalism the tunneling current through a hybrid structure where a confined magnetic insulator (I) is sandwiched between two non-magnetic leads is calculated. The leads can be either normal metals (M) or superconductors…

Tunnel spin polarization in a piezoelectric AlGaN/GaN double barrier structure is calculated. It is shown that the piezoelectric field and the spontaneous electrical polarization increase an efficiency of the tunnel spin injection. The…

Access to the electron spin is at the heart of many protocols for integrated and distributed quantum-information processing [1-4]. For instance, interfacing the spin-state of an electron and a photon can be utilized to perform quantum gates…

We consider spin-polarized transport in a quantum spin Hall antidot system coupled to normal leads. Due to the helical nature of the conducting edge states, the screening potential at the dot region becomes spin dependent without external…

A theory of resonant spin-dependent tunneling has been developed for symmetrical double-barrier structures grown of non-centrosymmetrical semiconductors. The dependence of the tunneling transparency on the spin orientation and the wave…