相关论文: Effects of Zeeman spin splitting on the modular sy…
We report on the study of the fractional quantum Hall effect at the filling factor 5/2 using exact diagonalization method with torus geometry. The particle-hole symmetry breaking effect is considered using an additional three-body…
In wide GaAs quantum wells where two electric subbands are occupied we apply a parallel magnetic field or increase the electron density to cause a crossing of the two $N=0$ Landau levels of these subbands and with opposite spins. Near the…
The angular momentum model which couples the spin and charge is discussed as a possible theory of the quantum Hall effect. The high Landau level filling fractions 5/2, 7/3 and 8/3 are understood by this model. It is found that 7/3 and 8/3…
Unlike regular electron spin, the pseudospin degeneracy of Fermi points in graphene does not couple directly to magnetic field. Therefore, graphene provides a natural vehicle to observe the integral and fractional quantum Hall physics in an…
We discuss the orbital effect of a tilted magnetic field on the quantum Hall effect in parabolic quantum wells. Many-body states realized at the fractional 1/3 and 1/2 filling of the second electronic subband are studied using finite-size…
We study two dimensional electron systems confined in wide quantum wells whose subband separation is comparable with the Zeeman energy. Two N = 0 Landau levels from different subbands and with opposite spins are pinned in energy when they…
We have studied the Zeeman splitting in ballistic hole quantum wires formed in a (311)A quantum well by surface gate confinement. Transport measurements clearly show lifting of the spin degeneracy and crossings of the subbands when an…
We report on our accurate evaluation of spin polarizations of the ground state and particle-hole gaps for partially-filled lowest Landau level, observed in recent experiments on graphene subjected to ultra-high magnetic fields. We find that…
We have studied theoretically the effect of a tuneable lateral confinement on two-dimensional hole systems realised in III-V semiconductor heterostructures. Based on the 4x4 Luttinger description of the valence band, we have calculated…
Landau level (LL) engineered photonic spin Hall effect (PSHE) holds great promise for nanoscale manipulation and steering of magneto-optical transport in two-dimensional atomic systems. Herein, we theoretically investigate PSHE modulated by…
Free planar electrons in a uniform magnetic field are shown to possess the symmetry of area-preserving diffeomorphisms ($W$-infinity algebra). Intuitively, this is a consequence of gauge invariance, which forces dynamics to depend only on…
We study the phase diagram of a model quantum spin Hall system as a function of band inversion and band-coupling strength, demonstrating that when band hybridization is weak, an interaction-induced nematic insulator state emerges over a…
The physics of the fractional quantum Hall effect is the physics of interacting electrons confined to a macroscopically degenerate Landau level. In this Chapter we discuss the theory of the quantum Hall effect in systems where the electrons…
We show that the Quantum Spin Hall Effect, a state of matter with topological properties distinct from conventional insulators, can be realized in HgTe/CdTe semiconductor quantum wells. By varying the thickness of the quantum well, the…
We present here the results from a density dependent study of the activation energy gaps of the fractional quantum Hall effect states at Landau level fillings \nu=8/3 and 7/3 in a series of high quality quantum wells. In the density range…
We have measured activation gaps for odd-integer quantum Hall states in a unidirectional lateral superlattice (ULSL) -- a two-dimensional electron gas (2DEG) subjected to a unidirectional periodic modulation of the electrostatic potential.…
The tilting angular dependence of the energy gap was measured in the bilayer quantum Hall state at the Landau level filling $\nu=1$ by changing the density imbalance between the two layers. The observed gap behavior shows a continuous…
We show how the quantum Hall effect in an inverted-gap semiconductor (with electron- and hole-like states at the conduction- and valence-band edges interchanged) can be used to inject, precess, and detect the electron spin along a…
We study the influence of an in-plane magnetic field and Coulomb interactions on the physics of quantum spin Hall insulators, like those in InAs/GaSb and HgTe/CdTe quantum wells. Using a Hartree-Fock mean-field theory approximation, we…
Quantum anomalous Hall effect has been predicted in HgMnTe quantum wells with an out-of-plane magnetization of Mn atoms. However, since HgMnTe quantum wells are paramagnetic, an out-of-plane magnetic field is required to polarize magnetic…