中文
相关论文

相关论文: Differences of interface and bulk transport proper…

200 篇论文

The sensitive dependence of electronic and thermoelectric properties of MoS$_2$ on the applied strain opens up a variety of applications in the emerging area of straintronics. Using first principles based density functional theory…

材料科学 · 物理学 2015-06-22 Swastibrata Bhattacharyya , Tribhuwan Pandey , Abhishek K. Singh

We report experimental evidence of surface dominated transport in single crystalline nanoflake devices of topological insulator Bi1.5Sb0.5Te1.8Se1.2. The resistivity measurements show dramatic difference between the nanoflake devices and…

介观与纳米尺度物理 · 物理学 2015-06-04 Bin Xia , Peng Ren , Azat Sulaev , Peng Liu , Shun-Qing Shen , Lan Wang

The effect of monolayers of oxygen (O) and hydrogen (H) on the possibility of material transfer at aluminium/titanium nitride (Al/TiN) and copper/diamond (Cu/C$_{\text{dia}}$) interfaces, respectively, were investigated within the framework…

We perform in-situ two-cycle thermal cycling and annealing studies for a transferred CVD-grown monolayer MoS2 on a SiO2/Si substrate, using spatially resolved micro-Raman and PL spectroscopy. After the thermal cycling and being annealed at…

材料科学 · 物理学 2017-03-15 Liqin Su , Yifei Yu , Linyou Cao , Yong Zhang

Contact resistances between organic semiconductors and metals can dominate the transport properties of electronic devices incorporating such materials. We report measurements of the parasitic contact resistance and the true channel…

介观与纳米尺度物理 · 物理学 2007-05-23 B. H. Hamadani , D. Natelson

Efficient thermal transport across solid-liquid interfaces is essential for optimizing heat dissipation in modern technological applications. This study employs molecular dynamics (MD) simulations to investigate the impact of surface…

原子与分子团簇 · 物理学 2025-11-27 Viktor Mandrolko , Konstantinos Termentzidis , David Lacroix , Mykola Isaiev

Over the last decade, progress in wide bandgap, III-V materials systems based on gallium nitride (GaN) has been a major driver in the realization of high power and high frequency electronic devices. Since the highly conductive,…

Interfacial charge transfer plays an essential role in establishing the relative alignment of the metal Fermi level and the energy bands of organic semiconductors. While the details remain elusive in many systems, this charge transfer has…

材料科学 · 物理学 2009-05-21 J. H. Worne , R. Giridharagopal , K. F. Kelly , D. Natelson

Exchanging hydrophobic alkyl-based side chains to hydrophilic glycol-based side chains is a widely adopted method for improving mixed-transport device performance, despite the impact on solid state packing and polymer-electrolyte…

We study the effect of polymer coating, pressure and temperature on the electrical characteristics of monolayer WSe2 back-gated transistors with quasi-ohmic Ni/Au contacts. We find that the removal of a layer of poly(methyl methacrylate) or…

介观与纳米尺度物理 · 物理学 2020-05-01 Francesca Urban , Lisanne Peters , Nadia Martucciello , Niall McEvoy , Antonio Di Bartolomeo

The intrinsic carrier transport dynamics in phosphorene is theoretically examined. Utilizing a density functional theory treatment, the low-field mobility and the saturation velocity are characterized for both electrons and holes in the…

介观与纳米尺度物理 · 物理学 2016-08-24 Zhenghe Jin , Jeffrey T. Mullen , Ki Wook Kim

Ballistic device performance of monolayer black phosphorous (BP) field-effect transistors (FET) is investigated in this work. Due to the anisotropic effect mass of the carriers, the ON-state current is dependent on the transport direction.…

材料科学 · 物理学 2014-07-14 Kai-Tak Lam , Zhipeng Dong , Jing Guo

We present an overview of recent studies of the charge transport in the field effect transistors on the surface of single crystals of organic low-molecular-weight materials. We first discuss in detail the technological progress that has…

其他凝聚态物理 · 物理学 2009-11-10 R. W. I. de Boer , M. E. Gershenson , A. F. Morpurgo , V. Podzorov

Here, we present a temperature ($T$) dependent comparison between field-effect and Hall mobilities in field-effect transistors based on few-layered WSe$_2$ exfoliated onto SiO$_2$. Without dielectric engineering and beyond a $T$-dependent…

The charge transport mechanism and the macroscopic dielectric constant in polycrystalline device materials commonly exhibit several components such as electrode-sample interface, grain boundary and bulk contributions. In order to gain…

材料科学 · 物理学 2007-05-23 Rainer Schmidt , Andrew W. Brinkman

We study the modifications of near-field radiative energy transfer (NFRET) caused by residual surface charges, which are common in micro- and nano-systems like NEMS/MEMS. The host object with the residual surface charges and the inherent…

应用物理 · 物理学 2024-02-07 Minggang Luo , Jiaqi Zhu , S. -A. Biehs , Junming Zhao , and Linhua Liu

Ferroelectric field-effect transistors (FE-FETs) consisting of tunable dielectric layers are utilized to investigate interfacial transport processes. Large changes in the dielectric constant as a function of temperature are observed in…

材料科学 · 物理学 2015-06-04 Satyaprasad P. Senanayak , S. Guha , K. S. Narayan

We investigate the semiclassical electronic transport properties of the bilayer silicene-like system in the presence of charged impurity. The trigonal warping due to the interlayer hopping, and its effect to the band structure of bilayer…

介观与纳米尺度物理 · 物理学 2018-09-18 Chen-Huan Wu

Metal oxide (MO) semiconductors are widely used in electronic devices due to their high optical transmittance and promising electrical performance. This work describes the advancement toward an eco-friendly, streamlined method for preparing…

Charge-carrier transport at the semiconductor-gate dielectric interface in organic field-effect transistors is critically dependent on the degree of disorder in the typically semi-crystalline semiconductor layer. Charge trapping can occur…