相关论文: Variable Range Hopping Conduction in Complex Syste…
We consider a model of one-dimensional Mott insulators coupled by a weak interchain tunnelling $t_\perp$. We first determine the single-particle Green's function of a single chain by exact field-theoretical methods and then take the…
The statistical properties of the conductance of one dimensional disordered systems are studied at finite bias voltage V and temperature T, in an independent-electron picture. We calculate the complete distribution of the conductance P(G)…
Thermal conductivities (TCs) of the vast majority of amorphous polymers are in a very narrow range, 0.1 $\sim$ 0.5 Wm$^{-1}$K$^{-1}$, although single polymer chains possess TC of orders-of-magnitude higher. Entanglement of polymer chains…
The dynamical conductivity of interacting multiband electronic systems derived in Ref.[1] is shown to be consistent with the general form of the Ward identity. Using the semiphenomenological form of this conductivity formula, we have…
Statistical-mechanical models often exhibit a dimension-dependent solvability: in 1D, exact solutions are straightforward; in 2D, solutions are exact but require nontrivial derivations; and in 3D, closed-form solutions are typically…
We investigate steady-state current fluctuations in two models of run-and-tumble particles (RTPs) on a ring of $L$ sites, for \textit{arbitrary} tumbling rate $\gamma=\tau_p^{-1}$ and density $\rho$; model I consists of standard hardcore…
Impurities and defects are ubiquitous in topological insulators (TIs) and thus understanding the effects of disorder on electronic transport is important. We calculate the distribution of the random conductance fluctuations $P(G)$ of…
Numerical calculations of anisotropic hopping transport based on the resistor network model are presented. Conductivity is shown to follow the stretched exponential dependence on temperature with exponents changing from 1/4 to 1 as the wave…
We propose a theory of the origin of transport nonuniversality in disordered insulating-conducting compounds based on the interplay between microstructure and tunneling processes between metallic grains dispersed in the insulating host. We…
The variable range hopping theory, as formulated for exponentially localized impurity states, does not necessarily apply in the case of graphene with covalently attached impurities. We analyze the localization of impurity states in graphene…
Understanding charge transport in strongly correlated systems remains a central challenge in condensed matter physics, particularly in light of the ubiquitous linear-in-$T$ resistivity observed in strange metals across many platforms from…
The correlation-driven Mott transition is commonly characterized by a drop in resistivity across the insulator-metal phase boundary; yet, the complex permittivity provides a deeper insight into the microscopic nature. We investigate the…
We employ a dual-gated geometry to control the band gap \Delta in bilayer graphene and study the temperature dependence of the resistance at the charge neutrality point, RNP(T), from 220 to 1.5 K. Above 5 K, RNP(T) is dominated by two…
Transport in undoped graphene is related to percolating current patterns in the networks of {\em N-} and {\em P}-type regions reflecting the strong bipolar charge density fluctuations. Transmissions of the {\em P-N} junctions, though small,…
The conductivity of extremely high mobility dilute two-dimensional holes in GaAs changes linearly with temperature in the insulating side of the metal-insulator transition. Hopping conduction, characterized by an exponentially decreasing…
Many metallic quantum materials display anomalous transport phenomena that defy a Fermi liquid description. Here, we use numerical methods to calculate thermal and charge transport in the doped Hubbard model and observe a cross-over…
We present a model of dissipative transport in the fractional quantum Hall regime. Our model takes account of tunneling through saddle points in the effective potential for excitations created by impurities. We predict the temperature range…
In this Letter, four-point magnetotransport of high mobility InGaAs/InP heterointerfaces is measured from 1.6 K to 300 K and from 0 to 15 T, and an analysis is shown whereby the mobility and density of the two-dimensional (2D) accumulation…
We present a comprehensive mathematical model and experimental measurements for the evolution of a trapped particle ensemble driven by collisions with a room-temperature background vapor. The model accommodates any trap geometry, confining…
The Efros-Shklovskii law for the conductivity of granular metals is interpreted as a result of a variable range cotunneling process. The cotunneling between distant resonant grains is predominantly elastic at low T << T_c, while it is…